SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-9315302MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	BICMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	255 mA	4096 words	COMMON	5	5	9	CHIP CARRIER	LCC68,.56SQ,25	SRAMs	.635 mm	125 Cel	3-STATE	4KX9	4K		-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N68		5.5 V	3.048 mm		14.224 mm	Qualified	36864 bit	4.5 V		e0			YES		14.224 mm	25 ns
70T633S12BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	355 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V				Not Qualified	9437184 bit	2.4 V		e1	30	260		.01 Amp		12 ns
70V9089S12PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK				85 Cel		64KX8	64K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V								12 ns
7025S25FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	330 mA	8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-F84		5.5 V			29.21 mm		131072 bit	4.5 V							29.21 mm	25 ns
5962-8700209TX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK			1.27 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm			Not Qualified	16384 bit	4.5 V		e0						45 ns
7024S55PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		4KX16	4K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100		5.5 V	1.6 mm		14 mm		65536 bit	4.5 V		e3					14 mm	55 ns
7024L25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm		29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.004 Amp	29.3116 mm	25 ns
70T3399S133BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX18	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B256	3	2.6 V	1.7 mm	133 MHz	17 mm	Not Qualified	2359296 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.015 Amp	17 mm	4.2 ns
7143SA70FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-F68		5.5 V			24.0792 mm		32768 bit	4.5 V							24.0792 mm	70 ns
7015L12JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	8192 words	COMMON	5		9	CHIP CARRIER	LDCC68,1.0SQ		1.27 mm	70 Cel	3-STATE	8KX9	8K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J68	3	5.5 V	4.572 mm		24.2062 mm	Not Qualified	73728 bit	4.5 V		e3	NOT SPECIFIED	260	YES	.005 Amp	24.2062 mm	12 ns
7007S20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	315 mA	32768 words	COMMON	5	5	8	FLATPACK	QFP80,.64SQ	SRAMs	.635 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G80	3	5.5 V				Not Qualified	262144 bit	4.5 V		e3	30	260		.015 Amp		20 ns
703537S250RM	Renesas Electronics	QDR SRAM	COMMERCIAL	576	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY			1 mm	70 Cel		512KX36	512K		0 Cel	MATTE TIN	BOTTOM		S-PBGA-B576		1.9 V	2.55 mm		25 mm	Not Qualified	18874368 bit	1.7 V		e3					25 mm	.45 ns
7024L70PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V			14 mm	Not Qualified	65536 bit	4.5 V		e0	20	240		.004 Amp	14 mm	70 ns
7025S25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	265 mA	8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J84		5.5 V			29.3116 mm		131072 bit	4.5 V							29.3116 mm	25 ns
70V9369L7PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	SYNCHRONOUS		16384 words		3.3		18	FLATPACK			.5 mm	85 Cel		16KX18	16K		-40 Cel	MATTE TIN	QUAD		S-PQFP-F100	3	3.6 V	1.6 mm		14 mm	Not Qualified	294912 bit	3 V		e3					14 mm
70V05S20GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	225 mA	8192 words	COMMON	3.3	3.3	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	3 V	-40 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		3.6 V	5.207 mm		29.464 mm	Not Qualified	65536 bit	3 V		e3				.015 Amp	29.464 mm	20 ns
7025L20GI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	8KX16	8K	2 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		5.5 V				Not Qualified	131072 bit	4.5 V		e0				.004 Amp		20 ns
70V3579S4BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	133 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260			17 mm	4.2 ns
70V7339S200BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	950 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.4 mm	200 MHz	17 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH	e1	30	260		.03 Amp	17 mm	3.4 ns
70V3599S133BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	133 MHz	17 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp	17 mm	15 ns
7025L25FB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	DFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5		16	FLATPACK	QFL84,1.2SQ		1.27 mm	125 Cel	3-STATE	8KX16	8K		-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F84	1	5.5 V	2.54 mm		29.2 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e0		240	YES	.004 Amp	29.2 mm	25 ns
5962-8687505UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		8	FLATPACK			1.27 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm		19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					19.05 mm	90 ns
70T3399S166BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX18	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	166 MHz	17 mm	Not Qualified	2359296 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.015 Amp	17 mm	12 ns
7006S70FB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-F68		5.5 V			24.0792 mm	Not Qualified	131072 bit	4.5 V		e0				.03 Amp	24.0792 mm	70 ns
7143SA20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	CHIP CARRIER				70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V					32768 bit	4.5 V								20 ns
70V3389S6BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	83 MHz	17 mm	Not Qualified	1179648 bit	3.15 V		e0	20	225		.015 Amp	17 mm	6 ns
5962-9166208MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	340 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F84	1	5.5 V	3.556 mm		29.21 mm	Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.004 Amp	29.21 mm	35 ns
7006S55JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	3	5.5 V	4.572 mm		24.2062 mm	Not Qualified	131072 bit	4.5 V		e0	20	225		.03 Amp	24.2062 mm	55 ns
7026L20JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER				125 Cel		16KX16	16K		-55 Cel		QUAD		S-PQCC-J84		5.5 V					262144 bit	4.5 V								20 ns
7143SA25FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	300 mA	2048 words		5		16	FLATPACK			1.27 mm	70 Cel		2KX16	2K		0 Cel		QUAD		S-PQFP-F68		5.5 V			24.0792 mm		32768 bit	4.5 V							24.0792 mm	25 ns
70T659S10BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e1	30	260		.02 Amp	17 mm	10 ns
7024L25GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		4096 words		5		16	GRID ARRAY			2.54 mm	70 Cel		4KX16	4K		0 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P84		5.5 V	5.207 mm		27.94 mm		65536 bit	4.5 V		e3					27.94 mm	25 ns
70V7319S133BFI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	675 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,50	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
7025S55PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	315 mA	8192 words		5		16	FLATPACK			.5 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		131072 bit	4.5 V							14 mm	55 ns
70T633S10BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e1	30	260		.02 Amp	15 mm	10 ns
5962-9166208MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS		4096 words		5		16	GRID ARRAY			2.54 mm	125 Cel		4KX16	4K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V	5.207 mm		27.94 mm	Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE		NOT SPECIFIED	NOT SPECIFIED			27.94 mm	35 ns
70T3519S133DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	FLATPACK, FINE PITCH			.5 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G208		2.6 V	4.1 mm		28 mm		9437184 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3					28 mm	15 ns
70V7339S133BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512KX18	512K		-40 Cel		BOTTOM		S-PBGA-B208		3.45 V	1.4 mm		15 mm		9437184 bit	3.15 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH						15 mm	4.2 ns
70V3589S166DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	166 MHz	28 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3	NOT SPECIFIED	260		.03 Amp	28 mm	12 ns
70V3599S133DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	133 MHz	28 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3				.03 Amp	28 mm	15 ns
7007S35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	295 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.015 Amp	24.2062 mm	35 ns
5962-8866514ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm		29.464 mm	Not Qualified	32768 bit	4.5 V		e0					29.464 mm	45 ns
70V35L15PFG	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	8192 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	8KX18	8K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	147456 bit	3 V		e3	30	260		.0025 Amp	14 mm	15 ns
70125L35JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX9	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	18432 bit	4.5 V		e3	30	260		.005 Amp		35 ns
70T631S15BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	305 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V				Not Qualified	4718592 bit	2.4 V		e1	30	260		.01 Amp		15 ns
70V3389S5BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B256	3	3.45 V	1.7 mm	100 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e1	30	260		.03 Amp	17 mm	5 ns
7143SA90PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	2048 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	20	240		.004 Amp	14 mm	90 ns
70V06S25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	85 Cel		16KX8	16K		-40 Cel		QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm		131072 bit	3 V							24.2062 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.