MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IMS1630LS-55M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.0008 Amp	35.56 mm	55 ns
IMS1620S-70M	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0	NO	.019 Amp	27.94 mm	70 ns
IMS1403LS-45M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	40 ns
5962-8854502XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		64KX4	64K		-55 Cel		QUAD		R-CQCC-N28	5.5 V	2.03 mm	8.89 mm	Not Qualified	262144 bit	4.5 V					13.97 mm	45 ns
IMS1620LS-55M	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0	NO	.0008 Amp	27.94 mm	55 ns
5962-8751306XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4	NO		10.973 mm	45 ns
5962-8868102XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		64KX4	64K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N28	5.5 V	3.048 mm	8.89 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY	e0			13.97 mm	45 ns
IMS1433S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-XDIP-T24				Not Qualified	16384 bit			e0		.02 Amp		45 ns
IMS1423S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	45 ns
5962-8670512ZC	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK			1.27 mm	125 Cel	3-STATE	4KX4	4K		-55 Cel	GOLD	DUAL	1	R-CDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V		e4	NO		12.192 mm	35 ns
5962-8751306VC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4	NO		22.86 mm	45 ns
IMS1403S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	40 ns
IMS1625S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V			NO		27.94 mm	35 ns
IMS1695S-20M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE				125 Cel	3-STATE	8KX9	8K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V			YES			20 ns
5962-8854504LA	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel		64KX4	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			30.48 mm	70 ns
5962-8670514ZX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK			1.27 mm	125 Cel		4KX4	4K		-55 Cel		DUAL		R-CDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V					12.192 mm	55 ns
5962-8685916LC	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	GOLD	DUAL	1	R-CDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e4	YES		30.48 mm	45 ns
IMS1630S-70M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.017 Amp	35.56 mm	70 ns
5962-8854501XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		64KX4	64K		-55 Cel		QUAD		R-CQCC-N28	5.5 V	2.03 mm	8.89 mm	Not Qualified	262144 bit	4.5 V					13.97 mm	35 ns
5962-8751306XX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4			10.973 mm	45 ns
IMS1624N-70M	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.019 Amp	13.97 mm	70 ns
IMS1630LN55M	STMicroelectronics	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N32	5.5 V	1.981 mm	11.43 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.0008 Amp	13.97 mm	55 ns
5962-8552510XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V					35.56 mm	55 ns
5962-8854503XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		64KX4	64K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N28	5.5 V	3.048 mm	8.89 mm	Not Qualified	262144 bit	4.5 V		e0			13.97 mm	55 ns
IMS1403LN-45M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0	NO		10.795 mm	40 ns
IMS1800S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX1	256K		-55 Cel		DUAL	1	R-CDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	262144 bit	4.5 V			NO		30.48 mm	45 ns
5962-8685914LC	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	GOLD	DUAL	1	R-CDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e4	YES		30.48 mm	55 ns
5962-8952403YX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		64KX4	64K		-55 Cel		QUAD		R-CQCC-N28	5.5 V	2.03 mm	8.89 mm	Not Qualified	262144 bit	4.5 V					13.97 mm	45 ns
IMS1403S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	35 ns
5962-8751302XX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4			10.973 mm	35 ns
5962-8854503LA	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel		64KX4	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			30.48 mm	55 ns
5962-8685913XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16KX4	16K		-55 Cel		QUAD		R-XQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V					13.97 mm	55 ns
IMS1600S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0	NO	.014 Amp	27.94 mm	45 ns
IMS1600S-70M	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0	NO	.014 Amp	27.94 mm	70 ns
5962-8601506ZA	STMicroelectronics	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0	NO		13.446 mm	55 ns
IMS1601LN70M	STMicroelectronics	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0	NO	.0008 Amp	13.446 mm	70 ns
5962-8751301VA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4			22.86 mm	25 ns
5962-8670512ZX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK			1.27 mm	125 Cel		4KX4	4K		-55 Cel		DUAL		R-CDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V					12.192 mm	35 ns
5962-8868104XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER				125 Cel		64KX4	64K		-55 Cel		QUAD		R-CQCC-N28	5.5 V			Not Qualified	262144 bit	4.5 V						70 ns
5962-8751303XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4	NO		10.973 mm	45 ns
IMS1423N-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0	NO		10.795 mm	55 ns
IMS1420S-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K		-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	55 ns
8413205YA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	16KX1	16K		-55 Cel		QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V			NO		10.795 mm	35 ns
5962-8552511XC	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	GOLD	DUAL	1	R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e4	YES		35.56 mm	70 ns
IMS1423S-70M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				70 ns
5962-8670515RA	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	125 Cel		4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			25.3365 mm	70 ns
IMS1627S-25M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V			YES			25 ns
IMS1423S-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.