MILITARY SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

IMS1203S-35M

STMicroelectronics

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

125 Cel

3-STATE

4KX1

4K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T18

5.5 V

7.62 mm

Not Qualified

4096 bit

4.5 V

e0

NO

.005 Amp

22.86 mm

35 ns

IMS1626N-20M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

YES

13.97 mm

20 ns

5962-8685912LA

STMicroelectronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

4

IN-LINE

2.54 mm

125 Cel

16KX4

16K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T28

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

32.004 mm

70 ns

5962-8751302XA

STMicroelectronics

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

1

FLATPACK

1.194 mm

125 Cel

4KX1

4K

-55 Cel

GOLD

DUAL

R-CDFP-F18

5.5 V

2.235 mm

Not Qualified

4096 bit

4.5 V

e4

10.973 mm

35 ns

IMS1620N-45M

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

CHIP CARRIER

LCC22,.3X.5

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

4.5 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.019 Amp

13.446 mm

45 ns

M38510/23801BVX

STMicroelectronics

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

1

IN-LINE

125 Cel

4KX1

4K

-55 Cel

DUAL

R-GDIP-T18

5.5 V

Not Qualified

4096 bit

4.5 V

85 ns

IMS1624S-55M

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX4

16K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T24

5.5 V

4.013 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

YES

.019 Amp

30.48 mm

55 ns

IMS1420S-70M

STMicroelectronics

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

NMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

COMMON

5

5

4

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

3-STATE

4KX4

4K

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T20

5.5 V

3.124 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

e0

NO

25.4 mm

70 ns

5962-8670512XX

STMicroelectronics

STANDARD SRAM

MILITARY

20

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

4096 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

4KX4

4K

-55 Cel

QUAD

R-CQCC-N20

5.5 V

1.981 mm

7.36 mm

Not Qualified

16384 bit

4.5 V

10.795 mm

35 ns

IMS1629N-35M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

YES

13.97 mm

35 ns

5962-8601502XX

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

1

IN-LINE

2.54 mm

125 Cel

64KX1

64K

-55 Cel

DUAL

R-CDIP-T22

5.5 V

3.89 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

27.94 mm

35 ns

8413208YX

STMicroelectronics

STANDARD SRAM

MILITARY

20

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

1

CHIP CARRIER

125 Cel

16KX1

16K

-55 Cel

QUAD

S-XQCC-N20

5.5 V

Not Qualified

16384 bit

4.5 V

55 ns

IMS1624N-45M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

4.5 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

e0

YES

.019 Amp

13.97 mm

45 ns

IMS1433S-35M

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

110 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

TIN LEAD

DUAL

R-XDIP-T24

Not Qualified

16384 bit

e0

.02 Amp

35 ns

5962-8685914LX

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

4

IN-LINE

2.54 mm

125 Cel

16KX4

16K

-55 Cel

DUAL

R-XDIP-T24

5.5 V

4.013 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

30.48 mm

55 ns

IMS1423Y-35M

STMicroelectronics

STANDARD SRAM

MILITARY

20

DFP

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

130 mA

4096 words

COMMON

5

5

4

FLATPACK

FL20,.3

SRAMs

1.27 mm

125 Cel

3-STATE

4KX4

4K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-XDFP-F20

5.5 V

1.356 mm

Not Qualified

16384 bit

4.5 V

e0

NO

12.192 mm

35 ns

IMS1629N-20M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

YES

13.97 mm

20 ns

IMS1820S-35M

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

4

IN-LINE

2.54 mm

125 Cel

3-STATE

64KX4

64K

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

4.013 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

NO

30.48 mm

35 ns

IMS1620LS-45M

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T22

5.5 V

4.521 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.0008 Amp

27.94 mm

45 ns

5962-8854501XA

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

64KX4

64K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N28

5.5 V

3.048 mm

8.89 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

35 ns

M38510/23112BKX

STMicroelectronics

STANDARD SRAM

MILITARY

24

DFP

RECTANGULAR

UNSPECIFIED

YES

1

TTL

FLAT

PARALLEL

ASYNCHRONOUS

256 words

5

4

FLATPACK

125 Cel

256X4

256

-55 Cel

DUAL

R-XDFP-F24

5.5 V

Not Qualified

1024 bit

4.5 V

75 ns

IMS1403S-70LM

STMicroelectronics

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

75 mA

16384 words

SEPARATE

5

5

1

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX1

16K

-55 Cel

TIN LEAD

DUAL

R-XDIP-T20

Not Qualified

16384 bit

e0

65 ns

5962-8868104LA

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

4

IN-LINE

2.54 mm

125 Cel

64KX4

64K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY

e0

70 ns

5962-8868104XA

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

64KX4

64K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N28

5.5 V

3.048 mm

8.89 mm

Not Qualified

262144 bit

4.5 V

TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY

e0

13.97 mm

70 ns

IMS1600N-45M

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

70 mA

65536 words

SEPARATE

5

5

1

CHIP CARRIER

LCC22,.3X.5

SRAMs

1.27 mm

125 Cel

3-STATE

64KX1

64K

4.5 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.014 Amp

13.446 mm

45 ns

5962-8751301XA

STMicroelectronics

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

1

FLATPACK

1.194 mm

125 Cel

4KX1

4K

-55 Cel

GOLD

DUAL

R-CDFP-F18

5.5 V

2.235 mm

Not Qualified

4096 bit

4.5 V

e4

10.973 mm

25 ns

IMS1820N-45M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

64KX4

64K

-55 Cel

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

262144 bit

4.5 V

NO

13.97 mm

45 ns

IMS1620N-55M

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

CHIP CARRIER

LCC22,.3X.5

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

4.5 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.019 Amp

13.446 mm

55 ns

5962-8670515XX

STMicroelectronics

STANDARD SRAM

MILITARY

20

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

4096 words

5

4

CHIP CARRIER

125 Cel

4KX4

4K

-55 Cel

QUAD

S-CQCC-N20

5.5 V

Not Qualified

16384 bit

4.5 V

70 ns

M74HC670RM13TR

STMicroelectronics

STANDARD SRAM

MILITARY

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

4.5

2/6

4

SMALL OUTLINE

SOP16,.25

Other Memory ICs

1.27 mm

125 Cel

4X4

4

-55 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G16

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

e4

9.9 mm

280 ns

IMS1420N-55M

STMicroelectronics

STANDARD SRAM

MILITARY

20

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

NMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

4096 words

COMMON

5

5

4

CHIP CARRIER

LCC20,.3X.43

SRAMs

1.27 mm

125 Cel

3-STATE

4KX4

4K

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N20

5.5 V

1.981 mm

7.36 mm

Not Qualified

16384 bit

4.5 V

e0

NO

10.795 mm

55 ns

IMS1433S-55M

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

90 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

TIN LEAD

DUAL

R-XDIP-T24

Not Qualified

16384 bit

e0

.02 Amp

55 ns

5962-8601507ZA

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

1

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

64KX1

64K

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

e0

NO

13.446 mm

70 ns

8413202RC

STMicroelectronics

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

1

IN-LINE

2.54 mm

125 Cel

3-STATE

16KX1

16K

-55 Cel

DUAL

1

R-CDIP-T20

5.5 V

3.124 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

NO

25.4 mm

40 ns

IMS1223A-25M

STMicroelectronics

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

110 mA

1024 words

COMMON

5

5

4

FLATPACK

FL18,.3

SRAMs

1.194 mm

125 Cel

3-STATE

1KX4

1K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-XDFP-F18

5.5 V

2.235 mm

Not Qualified

4096 bit

4.5 V

e0

NO

.005 Amp

10.973 mm

25 ns

5962-8685912LX

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

4

IN-LINE

2.54 mm

125 Cel

16KX4

16K

-55 Cel

DUAL

R-XDIP-T24

5.5 V

4.013 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

30.48 mm

70 ns

5962-8854504XA

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

64KX4

64K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N28

5.5 V

3.048 mm

8.89 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

70 ns

5962-8751302VC

STMicroelectronics

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

1

IN-LINE

2.54 mm

125 Cel

3-STATE

4KX1

4K

-55 Cel

GOLD

DUAL

1

R-CDIP-T18

5.5 V

7.62 mm

Not Qualified

4096 bit

4.5 V

e4

NO

22.86 mm

35 ns

IMS1626N-35M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

YES

13.97 mm

35 ns

5962-8685915XX

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

16KX4

16K

-55 Cel

QUAD

R-XQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

13.97 mm

45 ns

5962-8685912LC

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

4

IN-LINE

2.54 mm

125 Cel

3-STATE

16KX4

16K

-55 Cel

GOLD

DUAL

1

R-CDIP-T24

5.5 V

4.013 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e4

YES

30.48 mm

70 ns

IMS1601LS-45M

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

65536 words

SEPARATE

5

5

1

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

64KX1

64K

2 V

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T22

5.5 V

4.521 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.0008 Amp

27.94 mm

45 ns

M38510/23114BWX

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

UNSPECIFIED

NO

1

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

5

4

IN-LINE

125 Cel

256X4

256

-55 Cel

DUAL

R-XDIP-T22

5.5 V

Not Qualified

1024 bit

4.5 V

45 ns

IMS1624LN70M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

e0

YES

.0008 Amp

13.97 mm

70 ns

IMS1605S-35M

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

1

IN-LINE

2.54 mm

125 Cel

3-STATE

64KX1

64K

2 V

-55 Cel

DUAL

1

R-CDIP-T22

5.5 V

4.521 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

NO

27.94 mm

35 ns

8413202RA

STMicroelectronics

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

1

IN-LINE

2.54 mm

125 Cel

16KX1

16K

-55 Cel

DUAL

R-GDIP-T20

5.5 V

5.08 mm

7.62 mm

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

24.13 mm

45 ns

5962-8685913LC

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

4

IN-LINE

2.54 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

GOLD

DUAL

1

R-CDIP-T24

5.5 V

4.013 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e4

YES

30.48 mm

55 ns

5962-8751302VA

STMicroelectronics

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

1

IN-LINE

2.54 mm

125 Cel

4KX1

4K

-55 Cel

GOLD

DUAL

R-CDIP-T18

5.5 V

7.62 mm

Not Qualified

4096 bit

4.5 V

e4

22.86 mm

35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.