MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7B161A-25LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						25 ns
TTS92256G-45M-2	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.015 Amp		45 ns
CYRS1542AV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	4194304 words	COMMON	1.8	1.8	18	GRID ARRAY	CGA165,11X15,50	SRAMs	1.27 mm	125 Cel	3-STATE	4MX18	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
TTS92256N-20M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit							.02 Amp		20 ns
TTS92256G-45M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit							.015 Amp		45 ns
5962R1821502VXF	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1040 mA	4194304 words	COMMON	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX36	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Qualified	150994944 bit	1.7 V		e0			NO	.39 Amp	25 mm	.85 ns
CY7B161A-20LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						20 ns
CYPT1543AV18-250GLMB	Infineon Technologies	QDR SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	125 Cel		4MX18	4M		-55 Cel		BOTTOM		R-CBGA-N165	1	1.9 V	3.07 mm		21 mm		75497472 bit	1.7 V		e0					25 mm	.85 ns
5962R1821504VXF	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1040 mA	4194304 words	SEPARATE	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX36	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
SMD5962-9232404MYX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			55 mA	8192 words		5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-XQCC-N28						Not Qualified	65536 bit							.0015 Amp		55 ns
CY7B161A-45DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						45 ns
CY7B162A-35LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						35 ns
TTS92256GC-15C-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.015 Amp		15 ns
CYRS1545AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1275 mA	2097152 words	SEPARATE	1.8	1.8	36	GRID ARRAY	CGA165,11X15,50	SRAMs	1.27 mm	125 Cel	3-STATE	2MX36	2M		-55 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.57 Amp	25 mm	.85 ns
5962-1821101QXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K		-55 Cel	GOLD	DUAL		R-XDIP-T32	1	5.5 V				Qualified	262144 bit	4.5 V		e4						35 ns
CYPT2645KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1040 mA	4194304 words	COMMON	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX36	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V		e0			NO	.39 Amp	25 mm	.85 ns
CYRS1645KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1040 mA	4194304 words	SEPARATE	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX36	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
CYPT1049DV33-12FZMB	Infineon Technologies	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	FLATPACK			1.27 mm	125 Cel		512KX8	512K		-55 Cel	GOLD OVER NICKEL	DUAL		R-CDFP-F36	1	3.6 V	2.99 mm		12.19 mm		4194304 bit	3 V		e4					23.37 mm	12 ns
CYPT1544AV18-250GLMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1700 mA	2097152 words	COMMON	1.8		36	GRID ARRAY	LGA165,11X15,50		1.27 mm	125 Cel	3-STATE	2MX36	2M	1.7 V	-55 Cel		BOTTOM	2	R-CBGA-N165	1	1.9 V	3.07 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
5962F1120102VXA	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	125 Cel		4MX18	4M		-55 Cel		BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
STK14CA8C-5C35M	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	5		8	IN-LINE	DIP32,.3		2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	GOLD	DUAL		R-CDIP-T32	1	5.5 V	3.96 mm		7.62 mm		1048576 bit	4.5 V		e4			YES	.01 Amp	40.64 mm	35 ns
CY7C1061G30-10BVM	Infineon Technologies	STANDARD SRAM	MILITARY	48	VFBGA	RECTANGULAR		UNSPECIFIED	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		BOTTOM	1	R-XBGA-B48		3.6 V	1 mm		6 mm		16777216 bit	2.2 V					YES	.05 Amp	8 mm	10 ns
CY7C1032-14YMB	Infineon Technologies	STANDARD SRAM	MILITARY	52	QCCJ	SQUARE		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	64KX18	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		S-XQCC-J52						Not Qualified	1179648 bit			e0				.015 Amp		14 ns
STK14CA8C-35C35MTR	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	3.3		8	IN-LINE	DIP32,.3		2.54 mm	125 Cel	3-STATE	128KX8	128K	3 V	-55 Cel		DUAL		R-CDIP-T32		3.6 V	3.96 mm		7.62 mm		1048576 bit	3 V					YES	.01 Amp	40.64 mm	35 ns
CY7C1361KVE33-133AXM	Infineon Technologies	CACHE SRAM	MILITARY	100	LQFP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	125 Cel		256KX36	256K		-55 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE			260			20 mm	6.5 ns
CY7C1031-14YMB	Infineon Technologies	STANDARD SRAM	MILITARY	52	QCCJ	SQUARE		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	64KX18	64K	4.5 V	-55 Cel	TIN LEAD	QUAD		S-XQCC-J52						Not Qualified	1179648 bit			e0				.015 Amp		14 ns
CY7C1061G30-10BVXM	Infineon Technologies	STANDARD SRAM	MILITARY	48	VFBGA	RECTANGULAR		UNSPECIFIED	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		BOTTOM	1	R-XBGA-B48		3.6 V	1 mm		6 mm		16777216 bit	2.2 V					YES	.05 Amp	8 mm	10 ns
STK14CA8C-35C35M	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	3.3		8	IN-LINE	DIP32,.3		2.54 mm	125 Cel	3-STATE	128KX8	128K	3 V	-55 Cel	GOLD	DUAL		R-CDIP-T32	1	3.6 V	3.96 mm		7.62 mm		1048576 bit	3 V		e4			YES	.01 Amp	40.64 mm	35 ns
CY7C1370KVE33-167AXM	Infineon Technologies	ZBT SRAM	MILITARY	100	LQFP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	125 Cel		512KX36	512K		-55 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	3.4 ns
CY7C1381KVE33-133AXM	Infineon Technologies	CACHE SRAM	MILITARY	100	LQFP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	125 Cel		512KX36	512K		-55 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V				260			20 mm	6.5 ns
7140SA55PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm		15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.03 Amp	61.849 mm	55 ns
7140SA25PDGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48						Not Qualified	8192 bit			e3				.03 Amp		25 ns
7142SA35CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	4.826 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.03 Amp	60.96 mm	35 ns
7133LA90PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	90 ns
7140SA25PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48	1	5.5 V				Not Qualified	8192 bit	4.5 V		e3				.03 Amp		25 ns
7140SA35TFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	8192 bit	4.5 V		e3	30	260		.03 Amp		35 ns
7140LA35PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.004 Amp	14 mm	35 ns
7142LA35L48GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V			14.3002 mm	Not Qualified	16384 bit	4.5 V		e3				.004 Amp	14.3002 mm	35 ns
7142SA55CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	4.826 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.03 Amp	60.96 mm	55 ns
7133SA70PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	70 ns
7142SA25JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	330 mA	2048 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		2KX8	2K		-55 Cel	MATTE TIN	QUAD		S-PQCC-N52		5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3					19.1262 mm	25 ns
7140LA35L48B	Renesas Electronics	DUAL-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Not Qualified	8192 bit	4.5 V		e0	NOT SPECIFIED	240		.004 Amp	14.3002 mm	35 ns
7133SA90GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	GRID ARRAY				125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V					32768 bit	4.5 V								90 ns
7142LA35PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm		15.24 mm	Not Qualified	16384 bit	4.5 V		e0				.004 Amp	61.849 mm	35 ns
7140LA100L48GB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V			14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.004 Amp	14.3002 mm	100 ns
7140SA100PGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	125 Cel		1KX8	1K		-55 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm		15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	100 ns
7140SA55FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V			14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	14.3002 mm	55 ns
7133SA90FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	310 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm		24.0792 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	24.0792 mm	90 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.