MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
7133SA35JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	325 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V							35 ns
7140SA55FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e0			.03 Amp		55 ns
7140SA55LGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		1KX8	1K		-55 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V						14.3002 mm	55 ns
7133LA90PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V		14 mm		32768 bit	4.5 V						14 mm	90 ns
7140LA25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260	.004 Amp	19.1262 mm	25 ns
7140LA25PDGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48					Not Qualified	8192 bit			e3			.004 Amp		25 ns
7140SA35L48GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3			.03 Amp	14.3002 mm	35 ns
7140SA25PB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48					Not Qualified	8192 bit			e0			.03 Amp		25 ns
7142SA25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-N52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260	.03 Amp	19.1262 mm	25 ns
7140LA100L48BG	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		1KX8	1K		-55 Cel	MATTE TIN	QUAD		S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				14.3002 mm	100 ns
7140LA25PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm	14 mm	Not Qualified	8192 bit	4.5 V		e3	30	260	.004 Amp	14 mm	25 ns
7140LA55PGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	125 Cel		1KX8	1K		-55 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3				61.849 mm	55 ns
7142SA25L48GB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	330 mA	2048 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		2KX8	2K		-55 Cel	MATTE TIN	QUAD		S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	16384 bit	4.5 V		e3				14.3002 mm	25 ns
7140LA100FB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0			.004 Amp		100 ns
7133SA55JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	315 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V							55 ns
7140LA55TFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V			Not Qualified	8192 bit	4.5 V		e3	30	260	.004 Amp		55 ns
7140SA35PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0			.03 Amp	61.849 mm	35 ns
7140LA25CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V			Not Qualified	8192 bit	4.5 V		e3			.004 Amp		25 ns
7140LA35PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0			.004 Amp	61.849 mm	35 ns
7142LA25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-N52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260	.004 Amp	19.1262 mm	25 ns
7140LA35L48GB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3			.004 Amp	14.3002 mm	35 ns
7140LA25L48B8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e0			.004 Amp		25 ns
7142LA100L48GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	16384 bit	4.5 V		e3			.004 Amp	14.3002 mm	100 ns
7140SA35LGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	230 mA	1024 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		1KX8	1K		-55 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V						14.3002 mm	35 ns
7140SA55PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3			.03 Amp	61.849 mm	55 ns
7140SA25CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V			Not Qualified	8192 bit	4.5 V		e3			.03 Amp		25 ns
7142SA100L48B	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	NOT SPECIFIED	240	.03 Amp	14.3002 mm	100 ns
7133SA55FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	315 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-CQFP-F68	1	5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e0	NOT SPECIFIED	240	.015 Amp	24.0792 mm	55 ns
7133LA55PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V		14 mm		32768 bit	4.5 V						14 mm	55 ns
7142LA100FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	16384 bit	4.5 V		e0			.004 Amp		100 ns
7140SA100LGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		1KX8	1K		-55 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V						14.3002 mm	100 ns
7133LA90PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	14 mm	Not Qualified	32768 bit	4.5 V		e0	20	240	.004 Amp	14 mm	90 ns
7133LA55PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V		14 mm		32768 bit	4.5 V						14 mm	55 ns
7142LA100L48B	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	NOT SPECIFIED	240	.004 Amp	14.3002 mm	100 ns
7142LA35PGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3			.004 Amp	61.849 mm	35 ns
7142SA55PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			.03 Amp	61.849 mm	55 ns
7142LA55FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		8	FLATPACK				125 Cel		2KX8	2K		-55 Cel	MATTE TIN	QUAD		S-CQFP-F48		5.5 V			Not Qualified	16384 bit	4.5 V		e3					55 ns
7140LA35FB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-CQFP-F48	1	5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e0	NOT SPECIFIED	240	.004 Amp		35 ns
7140LA25PB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48					Not Qualified	8192 bit			e0			.004 Amp		25 ns
7142LA25JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V		e0	20	225	.004 Amp	19.1262 mm	25 ns
7142SA100FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	16384 bit	4.5 V		e3			.03 Amp		100 ns
7140LA55FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3			.004 Amp	14.3002 mm	55 ns
7140SA35FB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0			.03 Amp		35 ns
7142LA35PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	295 mA	2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel		DUAL		X-PDIP-T48		5.5 V				16384 bit	4.5 V							35 ns
7142SA35FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	16384 bit	4.5 V		e3			.03 Amp		35 ns
7133SA90JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V							90 ns
7140LA55FB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0			.004 Amp		55 ns
7142SA35L48GB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	325 mA	2048 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		2KX8	2K		-55 Cel	MATTE TIN	QUAD		S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	16384 bit	4.5 V		e3				14.3002 mm	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.