MILITARY SRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

5962-8601504XA

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

1

IN-LINE

2.54 mm

125 Cel

64KX1

64K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T22

5.5 V

3.89 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

27.94 mm

45 ns

IMS1203A-25M

STMicroelectronics

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

80 mA

4096 words

SEPARATE

5

5

1

FLATPACK

FL18,.3

SRAMs

1.194 mm

125 Cel

3-STATE

4KX1

4K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-XDFP-F18

5.5 V

2.235 mm

Not Qualified

4096 bit

4.5 V

e0

NO

.005 Amp

10.973 mm

25 ns

5962-8868103XA

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

64KX4

64K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N28

5.5 V

3.048 mm

8.89 mm

Not Qualified

262144 bit

4.5 V

TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY

e0

13.97 mm

55 ns

5962-8751303VA

STMicroelectronics

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

1

IN-LINE

2.54 mm

125 Cel

4KX1

4K

-55 Cel

GOLD

DUAL

R-CDIP-T18

5.5 V

7.62 mm

Not Qualified

4096 bit

4.5 V

e4

22.86 mm

45 ns

5962-8552504YX

STMicroelectronics

STANDARD SRAM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

1.27 mm

125 Cel

8KX8

8K

-55 Cel

QUAD

R-CQCC-N32

5.5 V

1.981 mm

11.43 mm

Not Qualified

65536 bit

4.5 V

13.97 mm

70 ns

8413205YX

STMicroelectronics

STANDARD SRAM

MILITARY

20

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

1

CHIP CARRIER

125 Cel

16KX1

16K

-55 Cel

QUAD

S-XQCC-N20

5.5 V

Not Qualified

16384 bit

4.5 V

35 ns

IMS1635N-20M

STMicroelectronics

STANDARD SRAM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

8KX8

8K

2 V

-55 Cel

QUAD

1

R-CQCC-N32

5.5 V

1.981 mm

11.43 mm

Not Qualified

65536 bit

4.5 V

YES

13.97 mm

20 ns

5962-8601503ZA

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

1

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

64KX1

64K

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

e0

NO

13.446 mm

45 ns

5962-8601504XC

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

1

IN-LINE

2.54 mm

125 Cel

3-STATE

64KX1

64K

2 V

-55 Cel

GOLD

DUAL

1

R-CDIP-T22

5.5 V

4.521 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e4

NO

27.94 mm

45 ns

5962-8751303XA

STMicroelectronics

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

1

FLATPACK

1.194 mm

125 Cel

4KX1

4K

-55 Cel

GOLD

DUAL

R-CDFP-F18

5.5 V

2.235 mm

Not Qualified

4096 bit

4.5 V

e4

10.973 mm

45 ns

5962-8952404YA

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

64KX4

64K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N28

5.5 V

2.03 mm

8.89 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

35 ns

IMS1635N-35M

STMicroelectronics

STANDARD SRAM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

8KX8

8K

2 V

-55 Cel

QUAD

1

R-CQCC-N32

5.5 V

1.981 mm

11.43 mm

Not Qualified

65536 bit

4.5 V

YES

13.97 mm

35 ns

5962-8685913XA

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

e0

YES

13.97 mm

55 ns

5962-8751304XX

STMicroelectronics

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

1024 words

5

4

FLATPACK

1.194 mm

125 Cel

1KX4

1K

-55 Cel

GOLD

DUAL

R-CDFP-F18

5.5 V

2.235 mm

Not Qualified

4096 bit

4.5 V

e4

10.973 mm

25 ns

5962-8685916XA

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

16KX4

16K

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

e0

YES

13.97 mm

45 ns

IMS1629N-25M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

YES

13.97 mm

25 ns

5962-8601508ZA

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

1

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

64KX1

64K

2 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

e0

NO

13.446 mm

70 ns

IMS1620LN70M

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

CHIP CARRIER

LCC22,.3X.5

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.0008 Amp

13.446 mm

70 ns

5962-8868103XX

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

125 Cel

64KX4

64K

-55 Cel

QUAD

R-CQCC-N28

5.5 V

Not Qualified

262144 bit

4.5 V

55 ns

IMS1423Y-55M

STMicroelectronics

STANDARD SRAM

MILITARY

20

DFP

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

110 mA

4096 words

COMMON

5

5

4

FLATPACK

FL20,.3

SRAMs

1.27 mm

125 Cel

3-STATE

4KX4

4K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-XDFP-F20

5.5 V

1.356 mm

Not Qualified

16384 bit

4.5 V

e0

NO

12.192 mm

55 ns

IMS1800N-30M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

262144 words

5

1

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

256KX1

256K

-55 Cel

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

262144 bit

4.5 V

NO

13.97 mm

30 ns

5962-8751301XC

STMicroelectronics

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

1

FLATPACK

1.194 mm

125 Cel

3-STATE

4KX1

4K

-55 Cel

GOLD

DUAL

1

R-CDFP-F18

5.5 V

2.235 mm

Not Qualified

4096 bit

4.5 V

e4

NO

10.973 mm

25 ns

IMS1620N-70M

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

CHIP CARRIER

LCC22,.3X.5

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

4.5 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.019 Amp

13.446 mm

70 ns

8403605JX

STMicroelectronics

STANDARD SRAM

MILITARY

18

CERAMIC, GLASS-SEALED

1

CMOS

PARALLEL

ASYNCHRONOUS

4096 words

5

1

IN-LINE

125 Cel

4KX1

4K

-55 Cel

DUAL

5.5 V

4096 bit

4.5 V

120 ns

IMS1620S-55M

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX4

16K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T22

5.5 V

4.521 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.019 Amp

27.94 mm

55 ns

5962-8685911LA

STMicroelectronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

4

IN-LINE

2.54 mm

125 Cel

16KX4

16K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T28

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

32.004 mm

70 ns

IMS1625S-25M

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

4

IN-LINE

2.54 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

DUAL

1

R-CDIP-T22

5.5 V

4.521 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

NO

27.94 mm

25 ns

5962-8670501RX

STMicroelectronics

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

4

IN-LINE

125 Cel

4KX4

4K

-55 Cel

DUAL

R-GDIP-T20

5.5 V

Not Qualified

16384 bit

4.5 V

25 ns

IMS1624S-45M

STMicroelectronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX4

16K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T24

5.5 V

4.013 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

YES

.019 Amp

30.48 mm

45 ns

5962-8868103LX

STMicroelectronics

STANDARD SRAM

MILITARY

24

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

4

IN-LINE

125 Cel

64KX4

64K

-55 Cel

DUAL

R-GDIP-T24

Not Qualified

262144 bit

55 ns

IMS1695N-20M

STMicroelectronics

STANDARD SRAM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8192 words

5

9

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

8KX9

8K

2 V

-55 Cel

QUAD

1

R-CQCC-N32

5.5 V

1.981 mm

11.43 mm

Not Qualified

73728 bit

4.5 V

YES

13.97 mm

20 ns

5962-8952401YA

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

64KX4

64K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N28

5.5 V

2.03 mm

8.89 mm

Not Qualified

262144 bit

4.5 V

e0

13.97 mm

70 ns

5962-8670514XX

STMicroelectronics

STANDARD SRAM

MILITARY

20

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

4096 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

4KX4

4K

-55 Cel

QUAD

R-CQCC-N20

5.5 V

1.981 mm

7.36 mm

Not Qualified

16384 bit

4.5 V

10.795 mm

55 ns

IMS1627N-25M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

65536 bit

4.5 V

YES

13.97 mm

25 ns

IMS1625N-20M

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16384 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

NO

13.446 mm

20 ns

5962-8751303VX

STMicroelectronics

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

1

IN-LINE

2.54 mm

125 Cel

4KX1

4K

-55 Cel

GOLD

DUAL

R-CDIP-T18

5.5 V

7.62 mm

Not Qualified

4096 bit

4.5 V

e4

22.86 mm

45 ns

IMS1820N-30M

STMicroelectronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

64KX4

64K

-55 Cel

QUAD

1

R-CQCC-N28

5.5 V

1.981 mm

8.89 mm

Not Qualified

262144 bit

4.5 V

NO

13.97 mm

30 ns

5962-8670512ZA

STMicroelectronics

STANDARD SRAM

MILITARY

20

DFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

4

FLATPACK

1.27 mm

125 Cel

4KX4

4K

-55 Cel

TIN LEAD

DUAL

R-CDFP-F20

5.5 V

1.356 mm

Not Qualified

16384 bit

4.5 V

e0

12.192 mm

35 ns

M38510/23112BWX

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

UNSPECIFIED

NO

1

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

5

4

IN-LINE

125 Cel

256X4

256

-55 Cel

DUAL

R-XDIP-T22

5.5 V

Not Qualified

1024 bit

4.5 V

75 ns

IMS1203S-25M

STMicroelectronics

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

125 Cel

3-STATE

4KX1

4K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T18

5.5 V

7.62 mm

Not Qualified

4096 bit

4.5 V

e0

NO

.005 Amp

22.86 mm

25 ns

IMS1223A-45M

STMicroelectronics

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

110 mA

1024 words

COMMON

5

5

4

FLATPACK

FL18,.3

SRAMs

1.194 mm

125 Cel

3-STATE

1KX4

1K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-XDFP-F18

5.5 V

2.235 mm

Not Qualified

4096 bit

4.5 V

e0

NO

.005 Amp

10.973 mm

45 ns

5962-8670512XA

STMicroelectronics

STANDARD SRAM

MILITARY

20

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

4096 words

5

4

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

4KX4

4K

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N20

5.5 V

1.981 mm

7.36 mm

Not Qualified

16384 bit

4.5 V

e0

NO

10.795 mm

35 ns

IMS1601LS-70M

STMicroelectronics

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

65536 words

SEPARATE

5

5

1

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

64KX1

64K

2 V

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T22

5.5 V

4.521 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.0008 Amp

27.94 mm

70 ns

IMS1601LN55M

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

70 mA

65536 words

SEPARATE

5

5

1

CHIP CARRIER

LCC22,.3X.5

SRAMs

1.27 mm

125 Cel

3-STATE

64KX1

64K

2 V

-55 Cel

TIN LEAD

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

e0

NO

.0008 Amp

13.446 mm

55 ns

5962-8751306VA

STMicroelectronics

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

2.54 mm

125 Cel

1KX4

1K

-55 Cel

GOLD

DUAL

R-CDIP-T18

5.5 V

7.62 mm

Not Qualified

4096 bit

4.5 V

e4

22.86 mm

45 ns

5962-8552505YX

STMicroelectronics

STANDARD SRAM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

8192 words

5

8

CHIP CARRIER

1.27 mm

125 Cel

8KX8

8K

-55 Cel

QUAD

R-CQCC-N32

5.5 V

1.981 mm

11.43 mm

Not Qualified

65536 bit

4.5 V

13.97 mm

55 ns

5962-8751305VC

STMicroelectronics

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

2.54 mm

125 Cel

3-STATE

1KX4

1K

-55 Cel

GOLD

DUAL

1

R-CDIP-T18

5.5 V

7.62 mm

Not Qualified

4096 bit

4.5 V

e4

NO

22.86 mm

35 ns

IMS1605N-25M

STMicroelectronics

STANDARD SRAM

MILITARY

22

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

65536 words

5

1

CHIP CARRIER

1.27 mm

125 Cel

3-STATE

64KX1

64K

2 V

-55 Cel

QUAD

1

R-CQCC-N22

5.5 V

1.981 mm

7.366 mm

Not Qualified

65536 bit

4.5 V

NO

13.446 mm

25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.