MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M74HC670B1R	STMicroelectronics	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		4.5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-55 Cel	MATTE TIN	DUAL	1	R-PDIP-T16		6 V	5.1 mm		7.62 mm	Not Qualified	16 bit	2 V		e3	NO			280 ns
5962-8601506XC	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel	GOLD	DUAL	1	R-CDIP-T22		5.5 V	4.521 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e4	NO		27.94 mm	55 ns
IMS1820S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		DUAL	1	R-CDIP-T24		5.5 V	4.013 mm		7.62 mm	Not Qualified	262144 bit	4.5 V			NO		30.48 mm	45 ns
5962-8670513RA	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	125 Cel		4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T20		5.5 V	3.124 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0			25.4 mm	45 ns
8413202YX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER				125 Cel		16KX1	16K		-55 Cel		QUAD		S-XQCC-N20		5.5 V				Not Qualified	16384 bit	4.5 V						45 ns
IMS1403LS-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20		5.5 V	3.124 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	50 ns
M38510/23110BWX	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		UNSPECIFIED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		4	IN-LINE				125 Cel		256X4	256		-55 Cel		DUAL		R-XDIP-T22		5.5 V				Not Qualified	1024 bit	4.5 V						60 ns
5962-8685912XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28		5.5 V	1.981 mm		8.89 mm	Not Qualified	65536 bit	4.5 V		e0	YES		13.97 mm	70 ns
5962-8601504ZA	STMicroelectronics	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N22		5.5 V	1.981 mm		7.366 mm	Not Qualified	65536 bit	4.5 V		e0	NO		13.446 mm	45 ns
5962-8952402YX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		64KX4	64K		-55 Cel		QUAD		R-CQCC-N28		5.5 V	2.03 mm		8.89 mm	Not Qualified	262144 bit	4.5 V					13.97 mm	55 ns
IMS1423N-45M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20		5.5 V	1.981 mm		7.36 mm	Not Qualified	16384 bit	4.5 V		e0	NO		10.795 mm	45 ns
5962-8552505XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-CDIP-T28		5.5 V	3.937 mm		15.24 mm	Not Qualified	65536 bit	4.5 V					35.56 mm	55 ns
5962-8670515XA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER				125 Cel		4KX4	4K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N20		5.5 V				Not Qualified	16384 bit	4.5 V		e0				70 ns
5962-8685913LX	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel		DUAL		R-XDIP-T24		5.5 V	4.013 mm		7.62 mm	Not Qualified	65536 bit	4.5 V					30.48 mm	55 ns
5962-8952403YA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		64KX4	64K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N28		5.5 V	2.03 mm		8.89 mm	Not Qualified	262144 bit	4.5 V		e0			13.97 mm	45 ns
5962-8685911XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16KX4	16K		-55 Cel		QUAD		R-XQCC-N28		5.5 V	1.981 mm		8.89 mm	Not Qualified	65536 bit	4.5 V					13.97 mm	70 ns
8403604JX	STMicroelectronics	STANDARD SRAM	MILITARY	18				CERAMIC, GLASS-SEALED		1	CMOS			PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE				125 Cel		4KX1	4K		-55 Cel		DUAL				5.5 V					4096 bit	4.5 V						120 ns
82S09/BXA	NXP Semiconductors	STANDARD SRAM	MILITARY	28		RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		9	IN-LINE				125 Cel		64X9	64		-55 Cel		DUAL		R-CDIP-T28		5.25 V				Not Qualified	576 bit	4.75 V						80 ns
54S189/BFA	NXP Semiconductors	STANDARD SRAM	MILITARY	16		RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	TTL		FLAT	PARALLEL	ASYNCHRONOUS		16 words		5		4	FLATPACK				125 Cel	3-STATE	16X4	16		-55 Cel		DUAL	1	R-CDFP-F16		5.25 V				Not Qualified	64 bit	4.75 V			NO			50 ns
8602301EX	NXP Semiconductors	CACHE SRAM	MILITARY	16	DIP	RECTANGULAR		UNSPECIFIED	NO	1	BIPOLAR	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE				125 Cel		256X1	256		-55 Cel		DUAL		R-XDIP-T16		5.25 V				Not Qualified	256 bit	4.75 V
S54S200F	NXP Semiconductors	STANDARD SRAM	MILITARY	16		RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE				125 Cel	3-STATE	256X1	256		-55 Cel		DUAL	1	R-GDIP-T16		5.5 V				Not Qualified	256 bit	4.5 V			NO			70 ns
8602301FA	NXP Semiconductors	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR		CERAMIC, GLASS-SEALED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	1	IN-LINE	FL16,.3	SRAMs	1.27 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel		DUAL		R-XDFP-F16		5.5 V				Qualified	4096 bit	4.5 V						120 ns
HEC4505BD	NXP Semiconductors	STANDARD SRAM	MILITARY	14	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		1	IN-LINE				125 Cel	3-STATE	64X1	64	3 V	-55 Cel		DUAL	1	R-CDIP-T14		15 V				Not Qualified	64 bit	3 V			NO			660 ns
5962-86052013A	NXP Semiconductors	STANDARD SRAM	MILITARY	28	QCCN	SQUARE		UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5		8	CHIP CARRIER				125 Cel		256X8	256		-55 Cel		QUAD		S-XQCC-N28		5.25 V				Not Qualified	2048 bit	4.75 V
5962-8605201WX	NXP Semiconductors	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BIPOLAR	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel		DUAL		R-PDIP-T22		5.25 V				Not Qualified	2048 bit	4.75 V
82S16/BEA	NXP Semiconductors	CACHE SRAM	MILITARY	16		RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE				125 Cel		256X1	256		-55 Cel		DUAL		R-CDIP-T16		5.5 V				Not Qualified	256 bit	4.5 V						70 ns
5962-8605201WA	NXP Semiconductors	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BIPOLAR	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel	TIN LEAD	DUAL		R-PDIP-T22		5.25 V				Not Qualified	2048 bit	4.75 V		e0
8602301EA	NXP Semiconductors	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel		DUAL		R-XDIP-T16		5.5 V				Qualified	4096 bit	4.5 V						120 ns
HEC4505BDB	NXP Semiconductors	STANDARD SRAM	MILITARY	14	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	64X1	64	3 V	-55 Cel		DUAL	1	R-GDIP-T14		15 V	5.08 mm		7.62 mm	Not Qualified	64 bit	4.5 V			NO			660 ns
8X350/BWA	NXP Semiconductors	STANDARD SRAM	MILITARY	22		RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel		DUAL		R-CDIP-T22		5.25 V					2048 bit	4.75 V
54S189/BEA	NXP Semiconductors	STANDARD SRAM	MILITARY	16		RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE				125 Cel	3-STATE	16X4	16		-55 Cel		DUAL	1	R-CDIP-T16		5.25 V				Not Qualified	64 bit	4.75 V			NO			50 ns
8602301FX	NXP Semiconductors	CACHE SRAM	MILITARY	16	DFP	RECTANGULAR		UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		256 words		5		1	FLATPACK				125 Cel		256X1	256		-55 Cel		DUAL		R-XDFP-F16		5.25 V				Not Qualified	256 bit	4.75 V
5962-86052013X	NXP Semiconductors	STANDARD SRAM	MILITARY	28	QCCN	SQUARE		UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883	NO LEAD	PARALLEL	SYNCHRONOUS		256 words		5		8	CHIP CARRIER				125 Cel		256X8	256		-55 Cel		QUAD		S-XQCC-N28		5.25 V				Not Qualified	2048 bit	4.75 V
5962F1120202VXA	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		2MX36	2M		-55 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0			25 mm
CY7B162A-25LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0				25 ns
5962F1120101VXA	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	4194304 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX18	4M	1.7 V	-55 Cel		BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Qualified	75497472 bit	1.7 V		e0	NO	.66 Amp	25 mm	.85 ns
CY7B162A-45DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0				45 ns
SMD5962-9232405MYA	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			65 mA	8192 words		5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-XQCC-N28						Not Qualified	65536 bit					.0015 Amp		45 ns
5962R1821402VXF	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Qualified	150994944 bit	1.7 V		e0	NO	.39 Amp	25 mm	.85 ns
CYPT1545AV18-250GLMB	Infineon Technologies	QDR SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		2MX36	2M		-55 Cel		BOTTOM		R-CBGA-N165	1	1.9 V	3.07 mm		21 mm		75497472 bit	1.7 V		e0			25 mm	.85 ns
5962-1821201QXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				125 Cel		128KX8	128K		-55 Cel	GOLD	DUAL		R-XDIP-T32	1	5.5 V				Qualified	1048576 bit	4.5 V		e4				35 ns
TTS92256N-35M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit					.015 Amp		35 ns
SMD5962-9232406MYX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			75 mA	8192 words		5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-XQCC-N28						Not Qualified	65536 bit					.0015 Amp		35 ns
CY7B161A-35LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0				35 ns
TTS92256N-55M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit					.02 Amp		55 ns
CY7B162A-20KMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28						Not Qualified	65536 bit			e0				20 ns
CY7B162A-35DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0				35 ns
CYPT2643KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V		e0	NO	.39 Amp	25 mm	.85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.