MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CYRS1049DV33-12FZMB	Infineon Technologies	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	95 mA	524288 words	COMMON	3.3	3.3	8	FLATPACK	FL36,.5	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-55 Cel	GOLD OVER NICKEL	DUAL		R-CDFP-F36	1	3.6 V	2.99 mm		12.19 mm	Not Qualified	4194304 bit	3 V		e4				.015 Amp	23.37 mm	12 ns
TTS92256G-35M-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.015 Amp		35 ns
SMD5962-9232404MXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			55 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		55 ns
5962R2020201VXC	Infineon Technologies	STANDARD SRAM	MILITARY	54	SSOP	RECTANGULAR	200k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38534 Class V	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, SHRINK PITCH	SOP54,.56,32		.8 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		DUAL	1	R-PDSO-G54		3.6 V	3.038 mm		11.836 mm	Qualified	16777216 bit	2.2 V					YES	.05 Amp	22.403 mm	10 ns
CY7B161A-25DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						25 ns
CYRS1543AV18-1XWI	Infineon Technologies	QDR SRAM	MILITARY		DIE	UNSPECIFIED	300k Rad(Si)	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	UNCASED CHIP				125 Cel		4MX18	4M		-55 Cel		UPPER		X-XUUC-N		1.9 V					75497472 bit	1.7 V	BURST ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED
CYPT1061G30-10GGMB	Infineon Technologies	STANDARD SRAM	MILITARY	54	SSOP	RECTANGULAR	200k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, SHRINK PITCH	SOP54,.56,32		.8 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		DUAL	1	R-PDSO-G54		3.6 V	3.038 mm		11.836 mm		16777216 bit	2.2 V					YES	.05 Amp	22.403 mm	10 ns
SMD5962-9232406MXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		35 ns
TTS92256G-20M-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.015 Amp		20 ns
CY7B161A-35DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						35 ns
CY7B162A-20DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						20 ns
CYPT1545AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		2MX36	2M		-55 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
CYPT1645KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1040 mA	4194304 words	SEPARATE	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX36	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
CY7B162A-20LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						20 ns
SMD5962-9232405MXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			65 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		45 ns
SMD5962-9232405MXX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			65 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		45 ns
CY7B161A-45LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						45 ns
CYPT1643KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	SEPARATE	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
CY7B162A-35KMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28						Not Qualified	65536 bit			e0						35 ns
SMD5962-9232405MYX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			65 mA	8192 words		5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-XQCC-N28						Not Qualified	65536 bit							.0015 Amp		45 ns
SMD5962-9232404MXX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			55 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		55 ns
TTS92256G-55M-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.02 Amp		55 ns
SMD5962-9232406MXX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		35 ns
CYRS2645KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1040 mA	4194304 words	COMMON	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX36	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V		e0			NO	.39 Amp	25 mm	.85 ns
CY7B161A-20DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						20 ns
TTS92256G-25M-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.015 Amp		25 ns
5962R1821403VXF	Infineon Technologies	STANDARD SRAM	MILITARY	165	CGA	RECTANGULAR	100k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class V	UNSPECIFIED	PARALLEL	SYNCHRONOUS		8388608 words		1.8		18	GRID ARRAY			1.27 mm	125 Cel		8MX18	8M		-55 Cel		BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	150994944 bit	1.7 V							25 mm
5962R1821503VXF	Infineon Technologies	STANDARD SRAM	MILITARY	165	CGA	RECTANGULAR	100k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class V	UNSPECIFIED	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		4MX36	4M		-55 Cel		BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	150994944 bit	1.7 V							25 mm
CYRS1061G30-10GGMB	Infineon Technologies	STANDARD SRAM	MILITARY	54	SSOP	RECTANGULAR	200k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, SHRINK PITCH	SOP54,.56,32		.8 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		DUAL	1	R-PDSO-G54	1	3.6 V	3.038 mm		11.836 mm		16777216 bit	2.2 V					YES	.05 Amp	22.403 mm	10 ns
CYRS1643KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	SEPARATE	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
CYPT1542AV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	4194304 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX18	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
CYRS2643KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V		e0			NO	.39 Amp	25 mm	.85 ns
CYPT1542AV18-250GLMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1700 mA	4194304 words	COMMON	1.8		18	GRID ARRAY	LGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX18	4M	1.7 V	-55 Cel		BOTTOM	2	R-CBGA-N165	1	1.9 V	3.07 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
CYRS1544AV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	2097152 words	COMMON	1.8	1.8	36	GRID ARRAY	CGA165,11X15,50	SRAMs	1.27 mm	125 Cel	3-STATE	2MX36	2M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
5962R1821404VXF	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	SEPARATE	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
CYPT1544AV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	2097152 words	COMMON	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	2MX36	2M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
CYRS1543AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1275 mA	4194304 words	SEPARATE	1.8	1.8	18	GRID ARRAY	CGA165,11X15,50	SRAMs	1.27 mm	125 Cel	3-STATE	4MX18	4M		-55 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.57 Amp	25 mm	.85 ns
CYPT1543AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	125 Cel		4MX18	4M		-55 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
5962F1120201VXA	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	2097152 words	COMMON	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	2MX36	2M	1.7 V	-55 Cel		BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Qualified	75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
5962F1123501VXC	Infineon Technologies	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	300k Rad(Si)	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	FLATPACK			1.27 mm	125 Cel		512KX8	512K		-55 Cel	NICKEL GOLD	DUAL		R-XDFP-F36	1	3.6 V	2.99 mm		12.19 mm	Qualified	4194304 bit	3 V		e4					23.37 mm	12 ns
CY7B162A-25KMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28						Not Qualified	65536 bit			e0						25 ns
CY7B162A-45LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						45 ns
CY7B162A-45KMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28						Not Qualified	65536 bit			e0						45 ns
SMD5962-9232405MXA	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			65 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		45 ns
CY7B162A-25DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						25 ns
TTS92256N-25M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit							.015 Amp		25 ns
TTS92256NC-15C-4	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit							.02 Amp		15 ns
SMD5962-9232406MXA	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.