MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-3829409MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.211 mm	55 ns
5962-8700210UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V		e0					14.3002 mm	90 ns
7006S20GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	370 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm	27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.03 Amp	27.889 mm	20 ns
5962-8700204UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0		240		.03 Amp	14.3002 mm	55 ns
5962-8700203ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	225 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V			Not Qualified	16384 bit	4.5 V		e0		240		.03 Amp		70 ns
6116LA20PB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0						19 ns
5962-8866509ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Qualified	32768 bit	4.5 V	ARBITER		NOT SPECIFIED	NOT SPECIFIED			29.464 mm	70 ns
5962-8700205ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V			Not Qualified	16384 bit	4.5 V		e0						45 ns
5962-3829416MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V		e0					37.211 mm	19 ns
5962-8700220UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	240 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	14.3002 mm	25 ns
5962-8687509UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm	19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	19.05 mm	90 ns
7006S35PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm	14 mm	Not Qualified	131072 bit	4.5 V		e0	30	240		.03 Amp	14 mm	35 ns
HS4-65T262RH-8	Renesas Electronics	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	200k Rad(Si)	CERAMIC	YES		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	34.2 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	3 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32					Not Qualified	16384 bit			e0				.005 Amp		175 ns
5962-9166202MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	330 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm	27.94 mm	Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.004 Amp	27.94 mm	70 ns
7143SA55GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	315 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V		e0	NOT SPECIFIED	240		.015 Amp	29.464 mm	55 ns
5962-8976407MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		4KX8	4K		-55 Cel		QUAD		S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			14.3002 mm	35 ns
7025S20FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	370 mA	8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-F84		5.5 V		29.21 mm		131072 bit	4.5 V							29.21 mm	20 ns
7024L35FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V			Not Qualified	65536 bit	4.5 V		e3				.004 Amp		35 ns
5962-8866202XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.02 Amp	37.211 mm	70 ns
7007S25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	345 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	25 ns
CDM6116BCJ/3	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	SQUARE		CERAMIC	YES		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	65 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.45SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		S-XQCC-N28					Not Qualified	16384 bit			e0				.0001 Amp		100 ns
7024L35GB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	NOT SPECIFIED	240		.004 Amp	27.94 mm	35 ns
5962-8866206XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.211 mm	25 ns
7007L55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	270 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	55 ns
6116SA20TPB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0						19 ns
5962-8976403MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE			2.54 mm	125 Cel		4KX8	4K		-55 Cel		DUAL		R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			60.96 mm	55 ns
7024S20JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS	370 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.00003 Amp	29.3116 mm	20 ns
7024L25GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class B	PIN/PEG	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V		e3				.004 Amp	27.94 mm	25 ns
5962-8700211TX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK			1.27 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm		Not Qualified	16384 bit	4.5 V		e0						70 ns
TTS92256FK-45C-3	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0008 Amp		45 ns
7052L30GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	108	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	335 mA	2048 words	COMMON	5	5	8	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	4	S-CPGA-P108	1	5.5 V	5.207 mm	30.48 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0		240		.0018 Amp	30.48 mm	30 ns
TTS92256F-25C-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		25 ns
7143LA70JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								70 ns
5962-8700205ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	185 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V			Not Qualified	16384 bit	4.5 V		e0		240		.004 Amp		45 ns
5962-9166206MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK			1.27 mm	125 Cel		4KX16	4K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F84		5.5 V	3.556 mm	29.21 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0					29.21 mm	45 ns
5962-8866205XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0					37.211 mm	35 ns
7024S25PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	14 mm	Not Qualified	65536 bit	4.5 V	4K X 16 DUAL PORT SRAM	e0	20	240		.00003 Amp	14 mm	25 ns
7025S35GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	325 mA	8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V		27.94 mm		131072 bit	4.5 V							27.94 mm	35 ns
7052S35PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	120	LFQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e3				.03 Amp	14 mm	35 ns
7025L25JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	8192 words		5		16	CHIP CARRIER			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQCC-J84		5.5 V		29.3116 mm		131072 bit	4.5 V							29.3116 mm	25 ns
70914S20PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	80	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	4096 words	COMMON	5	5	9	FLATPACK	QFP80,.64SQ	SRAMs	.635 mm	125 Cel	3-STATE	4KX9	4K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G80	3	5.5 V	1.6 mm	14 mm	Not Qualified	36864 bit	4.5 V		e3	30	260		.02 Amp	14 mm	20 ns
TTS92256FK-85M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		85 ns
5962-8855202UX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	70 ns
TTS92256T-45M-3	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.02 Amp		45 ns
8403613JA	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24	1	5.5 V	4.826 mm	15.24 mm	Qualified	16384 bit	4.5 V		e0		240	YES	.01 Amp	32.004 mm	70 ns
5962-3829407MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.015 Amp	37.1475 mm	70 ns
7M1001S30CB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1130 mA	131072 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP64,.6	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-CDMA-T64		5.5 V	9.652 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				.245 Amp	81.28 mm	30 ns
7054S25PRFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	128	QFF	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	400 mA	4096 words	COMMON	5	5	8	FLATPACK	QFP128,.67X.93,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX8	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	4	R-PQFP-F128	3	5.5 V	1.6 mm	14 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE	e0				.03 Amp	20 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.