MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7026L20JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER				125 Cel		16KX16	16K		-55 Cel		QUAD		S-PQCC-J84		5.5 V				262144 bit	4.5 V								20 ns
7024L35JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.004 Amp	29.3116 mm	35 ns
5962-8687512UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm	19.05 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	19.05 mm	45 ns
5962-8976404MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE			2.54 mm	125 Cel		4KX8	4K		-55 Cel		DUAL		R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			60.96 mm	55 ns
7024S25PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	14 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.00003 Amp	14 mm	25 ns
7006L55JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	295 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	55 ns
5962-8687507XA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	185 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.004 Amp	60.96 mm	55 ns
7025S20GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	370 mA	8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V		27.94 mm		131072 bit	4.5 V							27.94 mm	20 ns
5962-9150805MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	400 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm	29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.03 Amp	29.464 mm	45 ns
5962-8700210ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V			Not Qualified	16384 bit	4.5 V		e0		240		.03 Amp		90 ns
TTS92256N-150M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.002 Amp		150 ns
5962-8687506XX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	125 Cel		1KX8	1K		-55 Cel		DUAL		R-GDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED			60.96 mm	70 ns
7024L25FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V			Not Qualified	65536 bit	4.5 V		e3				.004 Amp		25 ns
7024S25JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		16	CHIP CARRIER			2.54 mm	125 Cel		4KX16	4K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J84		5.5 V	4.572 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V		e3					29.3116 mm	25 ns
7006S55PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm	14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.03 Amp	14 mm	55 ns
TTS92256T-150M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.002 Amp		150 ns
7006S20JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	370 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	20 ns
6116SA70TPB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0						70 ns
5962-9150807MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	R-CPGA-P68	1	5.5 V			Qualified	131072 bit	4.5 V		e0		240		.03 Amp		35 ns
6116LA55SOB	Renesas Electronics	STANDARD SRAM	MILITARY	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	SMALL OUTLINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDSO-G24		5.5 V				16384 bit	4.5 V		e0						55 ns
7052S35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	4	S-CPGA-P108		5.5 V	5.207 mm	30.48 mm	Not Qualified	16384 bit	4.5 V		e3				.03 Amp	30.48 mm	35 ns
HM1-65642C/883	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-GDIP-T28		5.5 V	5.92 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0				.00025 Amp		200 ns
7025S25JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	330 mA	8192 words		5		16	CHIP CARRIER			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQCC-J84		5.5 V		29.3116 mm		131072 bit	4.5 V							29.3116 mm	25 ns
5962-8700203TA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	225 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm	19.05 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	19.05 mm	70 ns
5962-3829416MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.0003 Amp	37.1475 mm	20 ns
7006S20JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	370 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e0	20	225		.03 Amp	24.2062 mm	20 ns
7006L25JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	25 ns
70914S25PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	4096 words	COMMON	5	5	9	FLATPACK	QFP80,.64SQ	SRAMs	.635 mm	125 Cel	3-STATE	4KX9	4K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G80	3	5.5 V	1.6 mm	14 mm	Not Qualified	36864 bit	4.5 V		e3	30	260		.02 Amp	14 mm	25 ns
6116SA35TPB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0						35 ns
7026L25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER				125 Cel		16KX16	16K		-55 Cel		QUAD		S-PQCC-J84		5.5 V				262144 bit	4.5 V								25 ns
7006L20GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	320 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm	27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.004 Amp	27.889 mm	20 ns
7025L25PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	8192 words		5		16	FLATPACK			.5 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-G100		5.5 V		14 mm		131072 bit	4.5 V							14 mm	25 ns
5962-8700219UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Qualified	16384 bit	4.5 V		e0					14.3002 mm	25 ns
7024L25PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	14 mm	Not Qualified	65536 bit	4.5 V	4K X 16 DUAL PORT SRAM	e0	20	240		.004 Amp	14 mm	25 ns
7025S20PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	370 mA	8192 words		5		16	FLATPACK			.5 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-G100		5.5 V		14 mm		131072 bit	4.5 V							14 mm	20 ns
7143LA70PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	14 mm	Not Qualified	32768 bit	4.5 V		e0	20	240		.004 Amp	14 mm	70 ns
5962-8687506UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	180 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm	19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	19.05 mm	70 ns
7143SA90JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								90 ns
5962-3829408MZX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	55 ns
5962-8866507ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm	29.464 mm	Qualified	32768 bit	4.5 V	ARBITER	e0		240	YES	.004 Amp	29.464 mm	90 ns
5962-9166212MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK			1.27 mm	125 Cel		4KX16	4K		-55 Cel		QUAD		R-PQFP-F84		5.5 V	3.556 mm	29.21 mm	Qualified	65536 bit	4.5 V							29.21 mm	20 ns
5962-8866203XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.211 mm	55 ns
7024L20JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQCC-J84	1	5.5 V	4.57 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V	4K X 16 DUAL PORT SRAM	e0	30	225		.004 Amp	29.3116 mm	20 ns
7025L20FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-F84		5.5 V		29.21 mm		131072 bit	4.5 V							29.21 mm	20 ns
7006L35PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	295 mA	16384 words		5		8	FLATPACK, LOW PROFILE			.8 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQFP-G64		5.5 V	1.6 mm	14 mm	Not Qualified	131072 bit	4.5 V		e3					14 mm	35 ns
7052L20GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		8	GRID ARRAY			2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	4	S-CPGA-P108		5.5 V	5.207 mm	30.48 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3			YES		30.48 mm	20 ns
7143SA70GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V		29.464 mm		32768 bit	4.5 V							29.464 mm	70 ns
5962-8687509UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		8	FLATPACK			1.27 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm	19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					19.05 mm	90 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.