MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7026S35GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				125 Cel		16KX16	16K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V				262144 bit	4.5 V								35 ns
7016S35JGBI	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		9	CHIP CARRIER				125 Cel		16KX9	16K		-55 Cel		QUAD		S-PQCC-J68		5.5 V				147456 bit	4.5 V								35 ns
7007L35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-XPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	262144 bit	4.5 V		e3				.01 Amp	29.464 mm	35 ns
7024S35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class B	PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V		e3				.00003 Amp	27.94 mm	35 ns
7006L55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	55 ns
7143SA70PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	2048 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	14 mm	Not Qualified	32768 bit	4.5 V		e0	20	240		.004 Amp	14 mm	70 ns
5962-8866515ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Qualified	32768 bit	4.5 V	ARBITER	e0					29.464 mm	35 ns
5962-8700202ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V			Qualified	16384 bit	4.5 V		e0		240		.03 Amp		90 ns
8403609JX	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	4.826 mm	15.24 mm	Qualified	16384 bit	4.5 V		e0	NOT APPLICABLE	NOT APPLICABLE			32.004 mm	45 ns
7006L70GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	280 mA	16384 words		5		8	GRID ARRAY				125 Cel		16KX8	16K		-55 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V			Not Qualified	131072 bit	4.5 V		e3						70 ns
7143LA35JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	295 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								35 ns
HM-6551B/883	Renesas Electronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		4	IN-LINE			2.54 mm	125 Cel		256X4	256		-55 Cel	TIN LEAD	DUAL		R-GDIP-T22		5.5 V	5.72 mm	10.16 mm	Not Qualified	1024 bit	4.5 V		e0						220 ns
5962-8700218ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V			Qualified	16384 bit	4.5 V		e0						35 ns
7006S35PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm	14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.03 Amp	14 mm	35 ns
5962-8700219UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	14.3002 mm	25 ns
7026L35GB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	16384 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX16	16K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V			Not Qualified	262144 bit	4.5 V		e0		240		.01 Amp		35 ns
8403612JX	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	4.826 mm	15.24 mm	Qualified	16384 bit	4.5 V		e0	NOT APPLICABLE	NOT APPLICABLE			32.004 mm	70 ns
5962-8861008ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			29.464 mm	90 ns
HM4-6514S-8	Renesas Electronics	STANDARD SRAM	MILITARY	18	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	31 mA	1024 words	COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.35	SRAMs	1.27 mm	125 Cel	3-STATE	1KX4	1K	2 V	-55 Cel		QUAD		R-XQCC-N18					Not Qualified	4096 bit							.000025 Amp		120 ns
5962-8687502XX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					60.96 mm	70 ns
7024L55GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class B	PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V		e3				.004 Amp	27.94 mm	55 ns
7143LA90PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V		14 mm		32768 bit	4.5 V							14 mm	90 ns
HM1-6551/883	Renesas Electronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	6.3 mA	256 words		5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-GDIP-T22		5.5 V			Not Qualified	1024 bit	4.5 V	ADDRESS LATCH; LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0			NO	.00001 Amp		300 ns
7006L35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm	27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.004 Amp	27.889 mm	35 ns
7024L55JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQCC-J84	1	5.5 V	4.57 mm	29.3116 mm	Not Qualified	65536 bit	4.5 V	4K X 16 DUAL PORT SRAM	e0	30	225		.004 Amp	29.3116 mm	55 ns
5962-8700207TA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	180 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm	19.05 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	19.05 mm	70 ns
7025S35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	325 mA	8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V		27.94 mm		131072 bit	4.5 V							27.94 mm	35 ns
7054S45GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	108	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	390 mA	4096 words	COMMON	5	5	8	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	4	S-XPGA-P108					Not Qualified	32768 bit			e0				.03 Amp		45 ns
5962-8687516XA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	185 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.004 Amp	60.96 mm	45 ns
8403612JA	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24	1	5.5 V	4.826 mm	15.24 mm	Qualified	16384 bit	4.5 V		e0		240	YES	.0002 Amp	32.004 mm	70 ns
5962-8700201TX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK			1.27 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm		Not Qualified	16384 bit	4.5 V		e0						45 ns
8403606JA	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Qualified	16384 bit	4.5 V		e0						70 ns
5962-8700212ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V			Qualified	16384 bit	4.5 V		e0		240		.03 Amp		55 ns
5962-8687521YA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.004 Amp	14.3002 mm	35 ns
7143LA90FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-F68		5.5 V		24.0792 mm		32768 bit	4.5 V							24.0792 mm	90 ns
5962-3829411MZX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0					37.1475 mm	45 ns
70914S20JB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	SYNCHRONOUS	310 mA	4096 words	COMMON	5	5	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX9	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1				Not Qualified	36864 bit			e0	20	225		.02 Amp		20 ns
5962-9166201MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK			1.27 mm	125 Cel		4KX16	4K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F84		5.5 V	3.556 mm	29.21 mm	Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0					29.21 mm	70 ns
5962-8866206NX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	25 ns
7006S35GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	325 mA	16384 words		5		8	GRID ARRAY			2.54 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V	2.413 mm	27.889 mm	Not Qualified	131072 bit	4.5 V		e3					27.889 mm	35 ns
5962-8976404MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		4KX8	4K		-55 Cel		QUAD		S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			14.3002 mm	55 ns
7M4077B17CB	Renesas Electronics	SRAM MODULE	MILITARY	64	DIP	RECTANGULAR	CERAMIC	NO			MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	125 Cel	3-STATE	256KX32	256K		-55 Cel	TIN LEAD	DUAL		R-XDIP-T64					Not Qualified	8388608 bit			e0						17 ns
TTS92256GK-85M-4	Renesas Electronics	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		QUAD		R-XQCC-N32					Not Qualified	262144 bit							.0005 Amp		85 ns
TTS92256FK-55M-3	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		55 ns
5962-3829406MZX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	70 ns
7006L20JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	320 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	20 ns
7024L25PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	125 Cel		4KX16	4K		-55 Cel	MATTE TIN	QUAD		S-PQFP-G100		5.5 V	1.6 mm	14 mm	Not Qualified	65536 bit	4.5 V		e3					14 mm	25 ns
7006L55GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	SPGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm	29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0		240		.004 Amp	29.464 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.