MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TTS92256N-30M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		30 ns
7143SA70GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	GRID ARRAY				125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V				32768 bit	4.5 V								70 ns
7007S55GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-XPGA-P68		5.5 V			Not Qualified	262144 bit	4.5 V		e3				.03 Amp		55 ns
7025S20JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	370 mA	8192 words		5		16	CHIP CARRIER			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQCC-J84		5.5 V		29.3116 mm		131072 bit	4.5 V							29.3116 mm	20 ns
7024L70FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V			Not Qualified	65536 bit	4.5 V		e3				.004 Amp		70 ns
5962-3829409MZA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.02 Amp	37.1475 mm	55 ns
7054L35PRFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	128	QFF	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	330 mA	4096 words	COMMON	5	5	8	FLATPACK	QFP128,.67X.93,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	TIN LEAD	QUAD	4	R-PQFP-F128	3	5.5 V	1.6 mm	14 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE	e0				.0045 Amp	20 mm	35 ns
8M628S85CB	Renesas Electronics	SRAM MODULE	MILITARY	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX16	8K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-XDIP-T40					Not Qualified	131072 bit			e0				.04 Amp		85 ns
5962-9150810MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	DFP	SQUARE		UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		16384 words		5		8	FLATPACK			1.27 mm	125 Cel		16KX8	16K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F68		5.5 V	3.68 mm	24 mm	Qualified	131072 bit	4.5 V		e0					24.08 mm	25 ns
HS9-65758RH-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	100k Rad(Si)	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28					Not Qualified	262144 bit			e0				.00025 Amp		35 ns
7024L20PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	GULL WING	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	14 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.004 Amp	14 mm	20 ns
5962-8687514YA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	180 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.004 Amp	14.3002 mm	70 ns
5962-8866511UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F68		5.5 V	3.05 mm	24 mm	Qualified	32768 bit	4.5 V		e0					24.08 mm	55 ns
5962-8866515UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F68		5.5 V	3.05 mm	24 mm	Qualified	32768 bit	4.5 V		e0					24.08 mm	35 ns
5962-8700213ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V			Not Qualified	16384 bit	4.5 V		e0						45 ns
8403608JA	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24	1	5.5 V	4.826 mm	15.24 mm	Qualified	16384 bit	4.5 V		e0		240	YES	.0002 Amp	32.004 mm	45 ns
5962-9150806MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		8	GRID ARRAY			2.54 mm	125 Cel		16KX8	16K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE		NOT SPECIFIED	NOT SPECIFIED			29.464 mm	45 ns
7006L45FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-G68	1	5.5 V			Not Qualified	131072 bit	4.5 V		e0		240		.004 Amp		45 ns
5962-3829414MTX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		8192 words		5		8	FLATPACK				125 Cel		8KX8	8K		-55 Cel		DUAL		R-GDFP-F28		5.5 V			Not Qualified	65536 bit	4.5 V								25 ns
5962-8700202UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V		e0		240		.03 Amp	14.3002 mm	90 ns
5962-8976401MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	4KX8	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Qualified	32768 bit	4.5 V		e0		240	YES	.03 Amp	14.3002 mm	70 ns
TTS92256N-12M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.0002 Amp		120 ns
5962-8687514YX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		1024 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		1KX8	1K		-55 Cel		QUAD		S-XQCC-N48		5.5 V	3.18 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED			14.3002 mm	70 ns
X24C45SM	Renesas Electronics	NON-VOLATILE SRAM	MILITARY	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	125 Cel	3-STATE	16X16	16		-55 Cel	TIN LEAD	DUAL	1	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	Not Qualified	256 bit	4.5 V	EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES	e0			NO	.00005 Amp	4.9 mm	375 ns
7024S25FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK				125 Cel		4KX16	4K		-55 Cel		QUAD		S-PQFP-G84		5.5 V				65536 bit	4.5 V								25 ns
5962-3829406MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				125 Cel		8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V			Qualified	65536 bit	4.5 V		e0						70 ns
5962-8687503XA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.03 Amp	60.96 mm	55 ns
7026S20JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER				125 Cel		16KX16	16K		-55 Cel		QUAD		S-PQCC-J84		5.5 V				262144 bit	4.5 V								20 ns
5962-8700208ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V			Qualified	16384 bit	4.5 V		e0						55 ns
7026S20GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				125 Cel		16KX16	16K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V				262144 bit	4.5 V								20 ns
TTS92256FK-55M-4	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		55 ns
7025S20FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	370 mA	8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-F84		5.5 V		29.21 mm		131072 bit	4.5 V							29.21 mm	20 ns
5962-8866207XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	4.34 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.02 Amp	35.56 mm	20 ns
7025L20FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-F84		5.5 V		29.21 mm		131072 bit	4.5 V							29.21 mm	20 ns
TTS92256F-25C-6	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		25 ns
7024L20GB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	NOT SPECIFIED	240		.004 Amp	27.94 mm	20 ns
5962-8687509XX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					60.96 mm	90 ns
5962-8700215TX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK			1.27 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm		Not Qualified	16384 bit	4.5 V		e0						70 ns
5962-9166204MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK			1.27 mm	125 Cel		4KX16	4K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F84		5.5 V	3.556 mm	29.21 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0					29.21 mm	55 ns
5962-8866201XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0					37.211 mm	100 ns
7006L25FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	280 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-F68	1	5.5 V	3.683 mm	24.0792 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0		240		.004 Amp	24.0792 mm	25 ns
7025S35GB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5		16	GRID ARRAY	PGA84M,11X11		2.54 mm	125 Cel	3-STATE	8KX16	8K		-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	3.68 mm	27.94 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e0		240	YES	.015 Amp	27.94 mm	35 ns
5962-9150804MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	335 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F68	1	5.5 V	3.683 mm	24.0792 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.004 Amp	24.0792 mm	55 ns
5962-8687513UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		8	FLATPACK			1.27 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm	19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					19.05 mm	90 ns
7006S25JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	340 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e0	20	225		.03 Amp	24.2062 mm	25 ns
5962-9315302MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY		QCCN			CERAMIC, METAL-SEALED COFIRED	YES	1	BICMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		9	CHIP CARRIER			.635 mm	125 Cel		4KX9	4K		-55 Cel	TIN LEAD	QUAD				5.5 V	3.048 mm	14.224 mm	Qualified	36864 bit	4.5 V		e0					14.224 mm	25 ns
5962-8861010ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			29.464 mm	70 ns
TTS92256FK-35M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	165 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.