Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
410 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL84,1.2SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F84 |
5.5 V |
3.56 mm |
29.21 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
.03 Amp |
29.21 mm |
25 ns |
||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Qualified |
65536 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
37.211 mm |
45 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
295 mA |
16384 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
14 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
280 mA |
2048 words |
5 |
16 |
FLATPACK |
1.27 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQFP-F68 |
5.5 V |
24.0792 mm |
32768 bit |
4.5 V |
24.0792 mm |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
MILITARY |
68 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
370 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL68,.95SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-F68 |
5.5 V |
24.0792 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
.015 Amp |
24.0792 mm |
20 ns |
|||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-GDIP-T28 |
1 |
5.5 V |
5.08 mm |
15.24 mm |
Qualified |
65536 bit |
4.5 V |
e0 |
240 |
YES |
.0002 Amp |
37.211 mm |
85 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
310 mA |
2048 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL68,.95SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX16 |
2K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQFP-F68 |
5.5 V |
3.683 mm |
24.0792 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
.004 Amp |
24.0792 mm |
70 ns |
||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Qualified |
65536 bit |
4.5 V |
e0 |
37.211 mm |
25 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
MATTE TIN |
PERPENDICULAR |
2 |
S-CPGA-P84 |
1 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.00003 Amp |
70 ns |
|||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL84,1.2SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G84 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.00003 Amp |
35 ns |
||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.5 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.002 Amp |
120 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
52 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N52 |
5.5 V |
4.58 mm |
14.3002 mm |
Qualified |
16384 bit |
4.5 V |
e0 |
14.3002 mm |
35 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
5.72 mm |
15.24 mm |
Qualified |
16384 bit |
4.5 V |
e0 |
90 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
225 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.3002 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
240 |
.03 Amp |
14.3002 mm |
70 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
280 mA |
2048 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA68,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX16 |
2K |
2 V |
-55 Cel |
TIN LEAD |
PERPENDICULAR |
2 |
S-CPGA-P68 |
1 |
5.5 V |
5.207 mm |
29.464 mm |
Qualified |
32768 bit |
4.5 V |
e0 |
240 |
YES |
.004 Amp |
29.464 mm |
70 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
230 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.3002 mm |
Qualified |
16384 bit |
4.5 V |
e0 |
240 |
.03 Amp |
14.3002 mm |
55 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
CHIP CARRIER |
2.54 mm |
125 Cel |
4KX16 |
4K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQCC-J84 |
5.5 V |
4.572 mm |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
29.3116 mm |
25 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
4.826 mm |
15.24 mm |
Qualified |
16384 bit |
4.5 V |
e0 |
32.004 mm |
45 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
4KX16 |
4K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
5.207 mm |
27.94 mm |
Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
NOT SPECIFIED |
NOT SPECIFIED |
27.94 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
140 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
.02 Amp |
35 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
270 mA |
32768 words |
COMMON |
5 |
5 |
8 |
GRID ARRAY |
PGA68,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
MATTE TIN |
PERPENDICULAR |
2 |
S-CPGA-P68 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.01 Amp |
55 ns |
||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
MILITARY |
84 |
DFP |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
250 mA |
8192 words |
COMMON |
5 |
16 |
FLATPACK |
QFL84,1.2SQ |
1.27 mm |
125 Cel |
3-STATE |
8KX16 |
8K |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F84 |
1 |
5.5 V |
2.54 mm |
29.2 mm |
Not Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP |
e0 |
240 |
YES |
.015 Amp |
29.2 mm |
35 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
4KX8 |
4K |
-55 Cel |
QUAD |
S-CQCC-N48 |
5.5 V |
3.048 mm |
14.3002 mm |
Qualified |
32768 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
14.3002 mm |
70 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
52 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N52 |
5.5 V |
4.58 mm |
14.3002 mm |
Qualified |
16384 bit |
4.5 V |
e0 |
14.3002 mm |
45 ns |
|||||||||||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
MILITARY |
68 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
340 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL68,.95SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-F68 |
5.5 V |
24.0792 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
.03 Amp |
24.0792 mm |
25 ns |
|||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.92 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
150 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
QUAD |
S-XQCC-N48 |
5.5 V |
3.18 mm |
14.3002 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
14.3002 mm |
90 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
315 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
55 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
QUAD |
S-XQCC-N48 |
5.5 V |
3.18 mm |
14.3002 mm |
Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
14.3002 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
115 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
.0005 Amp |
45 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
22 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
SYNCHRONOUS |
1024 words |
COMMON |
4 |
FLATPACK |
FL22,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
1KX4 |
1K |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F20 |
Not Qualified |
4096 bit |
e0 |
400 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
320 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-55 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
4K X 16 DUAL PORT SRAM |
e0 |
20 |
240 |
.004 Amp |
14 mm |
20 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
315 mA |
2048 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL68,.95SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX16 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F68 |
1 |
5.5 V |
3.683 mm |
24.0792 mm |
Qualified |
32768 bit |
4.5 V |
ARBITER |
e0 |
240 |
YES |
.03 Amp |
24.0792 mm |
55 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
4KX8 |
4K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
Qualified |
32768 bit |
4.5 V |
e0 |
35 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
SPGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
280 mA |
16384 words |
COMMON |
5 |
5 |
8 |
GRID ARRAY, SHRINK PITCH |
PGA68,11X11 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
2 V |
-55 Cel |
TIN LEAD |
PERPENDICULAR |
2 |
S-CPGA-P68 |
1 |
5.5 V |
5.207 mm |
29.464 mm |
Not Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
240 |
.004 Amp |
29.464 mm |
25 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
325 mA |
2048 words |
5 |
16 |
CHIP CARRIER |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQCC-N68 |
5.5 V |
32768 bit |
4.5 V |
35 ns |
|||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
330 mA |
16384 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
14 mm |
25 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
128 |
QFF |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
395 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP128,.67X.93,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
4 |
R-PQFP-F128 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE |
e0 |
.03 Amp |
20 mm |
35 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
340 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-55 Cel |
TIN LEAD |
PERPENDICULAR |
2 |
S-CPGA-P84 |
1 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
e0 |
240 |
YES |
.004 Amp |
27.94 mm |
45 ns |
||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
125 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.5 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.0002 Amp |
55 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.5 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.002 Amp |
150 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
280 mA |
16384 words |
COMMON |
5 |
5 |
8 |
GRID ARRAY |
PGA68,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
2 V |
-55 Cel |
MATTE TIN |
PERPENDICULAR |
2 |
S-CPGA-P68 |
5.5 V |
2.413 mm |
27.889 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
.004 Amp |
27.889 mm |
25 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
52 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N52 |
5.5 V |
4.58 mm |
14.3002 mm |
Qualified |
16384 bit |
4.5 V |
e0 |
14.3002 mm |
55 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
GRID ARRAY |
125 Cel |
16KX16 |
16K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
262144 bit |
4.5 V |
20 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
OTHER SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
105 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-GDIP-T28 |
1 |
5.5 V |
5.08 mm |
15.24 mm |
Qualified |
65536 bit |
4.5 V |
e0 |
20 |
240 |
YES |
.015 Amp |
37.211 mm |
70 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
180 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.3002 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
240 |
YES |
.004 Amp |
14.3002 mm |
70 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
4KX16 |
4K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
NOT SPECIFIED |
NOT SPECIFIED |
27.94 mm |
45 ns |
||||||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
340 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
PERPENDICULAR |
2 |
S-CPGA-P84 |
1 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
NOT SPECIFIED |
240 |
.03 Amp |
27.94 mm |
25 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.