MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7006L70GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	SPGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm	29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0		240		.004 Amp	29.464 mm	70 ns
7006L20FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	320 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V		24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	20 ns
7006S25PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm	14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.03 Amp	14 mm	25 ns
5962-8866512ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Qualified	32768 bit	4.5 V		e0					29.464 mm	55 ns
5962-8687508XX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					60.96 mm	45 ns
5962-8687510XX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V	4.826 mm	15.24 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					60.96 mm	70 ns
8403616JA	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24	1	5.5 V	4.826 mm	15.24 mm	Qualified	16384 bit	4.5 V		e0		240	YES	.0002 Amp	32.004 mm	90 ns
5962-8700210TX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK			1.27 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm		Not Qualified	16384 bit	4.5 V		e0						90 ns
7006L70FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		5.5 V		24.2062 mm	Not Qualified	131072 bit	4.5 V		e3				.004 Amp	24.2062 mm	70 ns
5962-8687508XA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	185 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.004 Amp	60.96 mm	45 ns
6116SA150PB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0						150 ns
7006L25GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	16384 words		5		8	GRID ARRAY			2.54 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V	2.413 mm	27.889 mm	Not Qualified	131072 bit	4.5 V		e3					27.889 mm	25 ns
7143LA35FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	295 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-CQFP-F68	1	5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e0	NOT SPECIFIED	240		.004 Amp	24.0792 mm	35 ns
5962-8700215UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	180 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V		e0		240		.004 Amp	14.3002 mm	70 ns
7025S55GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	315 mA	8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V		27.94 mm		131072 bit	4.5 V							27.94 mm	55 ns
5962-3829416MZX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0					37.1475 mm	19 ns
5962-8700211ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V			Not Qualified	16384 bit	4.5 V		e0						70 ns
5962-8976408MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE			2.54 mm	125 Cel		4KX8	4K		-55 Cel		DUAL		R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			60.96 mm	35 ns
5962-9161704MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS		8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE		NOT SPECIFIED	NOT SPECIFIED			27.94 mm	55 ns
7024L20FB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	QFF	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-F84	1	5.5 V	3.556 mm	29.21 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	NOT SPECIFIED	240		.004 Amp	29.21 mm	20 ns
TTS92256F-M-1	Renesas Electronics	STANDARD SRAM	MILITARY		DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS		32768 words	COMMON	5	5	8	FLATPACK	FL(UNSPEC)	SRAMs		125 Cel	3-STATE	32KX8	32K		-55 Cel		DUAL							Not Qualified	262144 bit
5962-3829412MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				125 Cel		8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V			Qualified	65536 bit	4.5 V		e0						35 ns
7143SA90JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								90 ns
7006L70JB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V		24.2062 mm	Not Qualified	131072 bit	4.5 V		e0	20	225		.004 Amp	24.2062 mm	70 ns
7006S25GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	340 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm	27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.03 Amp	27.889 mm	25 ns
5962-3829406MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T28	1	5.5 V			Qualified	65536 bit	4.5 V		e0		240		.0003 Amp		70 ns
7006L25JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	131072 bit	4.5 V		e0	20	225		.004 Amp	24.2062 mm	25 ns
7024S70GB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	NOT SPECIFIED	240		.03 Amp	27.94 mm	70 ns
5962-3829415MZX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	25 ns
7024L20GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class B	PIN/PEG	PARALLEL	ASYNCHRONOUS		4096 words		5		16	GRID ARRAY			2.54 mm	125 Cel		4KX16	4K		-55 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P84		5.5 V	5.207 mm	27.94 mm	Not Qualified	65536 bit	4.5 V		e3					27.94 mm	20 ns
HM1-6516B-2	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	34 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit			e0				.000025 Amp		120 ns
5962-8866206NA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.02 Amp	37.1475 mm	25 ns
6116LA55TPB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0						55 ns
7143LA55FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	285 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	24.0792 mm	55 ns
7006L70JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V		24.2062 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	70 ns
5962-8861011UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F68		5.5 V	3.683 mm	24.0792 mm	Qualified	32768 bit	4.5 V	ARBITER	e0					24.0792 mm	55 ns
7052L35PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE		PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3				Not Qualified	16384 bit			e3				.0018 Amp		35 ns
5962-8700201UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V		e0		240		.03 Amp	14.3002 mm	45 ns
5962-8687513UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE		UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	160 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm	19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	19.05 mm	90 ns
TTS92256T-85M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.02 Amp		85 ns
5962-8976405MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	4KX8	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Not Qualified	32768 bit	4.5 V		e0		240	YES	.03 Amp	14.3002 mm	45 ns
7024L20FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V			Not Qualified	65536 bit	4.5 V		e3				.004 Amp		20 ns
5962-8855202UA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.1475 mm	70 ns
5962-8700209ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V			Not Qualified	16384 bit	4.5 V		e0		240		.03 Amp		45 ns
HS4-65C262RH-8	Renesas Electronics	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	200k Rad(Si)	CERAMIC	YES		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	49.6 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	3 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32					Not Qualified	16384 bit			e0				.0001 Amp		150 ns
7007S35PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	80	QFP	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	335 mA	32768 words	COMMON	5	5	8	FLATPACK	QFP80,.64SQ	SRAMs	.65 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-XQFP-G80	3	5.5 V	1.6 mm	14 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.03 Amp	14 mm	35 ns
5962-8861010ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	2KX16	2K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm	29.464 mm	Qualified	32768 bit	4.5 V		e0		240	YES	.03 Amp	29.464 mm	70 ns
5962-8969002LX	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	125 Cel		2KX8	2K		-55 Cel		DUAL		R-XDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			32.004 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.