MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7006S70FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	310 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V		24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	70 ns
7143LA35JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	295 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								35 ns
5962-8866509UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F68		5.5 V	3.05 mm	24 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	24.08 mm	70 ns
HM1-6514/883	Renesas Electronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE				125 Cel		1KX4	1K		-55 Cel	TIN LEAD	DUAL		R-CDIP-P18		5.5 V				4096 bit	4.5 V		e0						320 ns
5962-8687510XA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	225 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.03 Amp	60.96 mm	70 ns
5962-9166201MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	390 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm	27.94 mm	Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.03 Amp	27.94 mm	70 ns
5962-9161704MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	DFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	335 mA	8192 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX16	8K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F84	1	5.5 V	3.56 mm	29.21 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.004 Amp	29.21 mm	55 ns
5962-8700223TA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm	19.05 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	19.05 mm	25 ns
5962-8700209UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V		e0					14.3002 mm	45 ns
5962-9161701MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F84		5.5 V	3.556 mm	29.21 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0					29.21 mm	70 ns
TTS92256FK-30C-6	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		30 ns
5962-8700211ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	225 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V			Not Qualified	16384 bit	4.5 V		e0		240		.03 Amp		70 ns
TTS92256TI-10M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.0002 Amp		100 ns
5962-9166203MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	395 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm	27.94 mm	Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.03 Amp	27.94 mm	55 ns
7024L70PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK				125 Cel		4KX16	4K		-55 Cel		QUAD		S-PQFP-G100		5.5 V				65536 bit	4.5 V								70 ns
7054L25PRFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	128	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	340 mA	4096 words	COMMON	5	5	8	FLATPACK	QFP128,.63X.87,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	TIN LEAD	QUAD	4	R-PQFP-F128	3	5.5 V	1.6 mm	14 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE	e0	30	225		.0045 Amp	20 mm	25 ns
5962-8687503UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		8	FLATPACK			1.27 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm	19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					19.05 mm	55 ns
TTS92256GK-45M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.0002 Amp		45 ns
5962-9166203MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK			1.27 mm	125 Cel		4KX16	4K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F84		5.5 V	3.556 mm	29.21 mm	Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0					29.21 mm	55 ns
5962-8700210ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V			Not Qualified	16384 bit	4.5 V		e0						90 ns
7143LA70FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	24.0792 mm	70 ns
TTS92256GK-55C-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.0002 Amp		55 ns
7006S20PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	370 mA	16384 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm	14 mm	Not Qualified	131072 bit	4.5 V		e0	30	240		.03 Amp	14 mm	20 ns
7025S25GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	330 mA	8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V		27.94 mm		131072 bit	4.5 V							27.94 mm	25 ns
7024S25FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	340 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-F84		5.5 V		29.21 mm	Not Qualified	65536 bit	4.5 V		e0				.03 Amp	29.21 mm	25 ns
5962-8700222TA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm	19.05 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	19.05 mm	35 ns
5962-8700215ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V			Not Qualified	16384 bit	4.5 V		e0		240		.004 Amp		70 ns
7025S20GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	370 mA	8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V		27.94 mm		131072 bit	4.5 V							27.94 mm	20 ns
7007L35JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	295 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e0	20	225		.01 Amp	24.2062 mm	35 ns
6116S70CBX	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	125 Cel		2KX8	2K		-55 Cel		DUAL		R-CDIP-T20		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V							25.781 mm	150 ns
7025L55FB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	DFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	210 mA	8192 words	COMMON	5		16	FLATPACK	QFL84,1.2SQ		1.27 mm	125 Cel	3-STATE	8KX16	8K		-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F84	1	5.5 V	2.54 mm	29.2 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e0		240	YES	.004 Amp	29.2 mm	55 ns
5962-8700206ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V			Qualified	16384 bit	4.5 V		e0		240		.004 Amp		90 ns
5962-9161708MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	DFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	340 mA	8192 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX16	8K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F84	1	5.5 V	3.56 mm	29.21 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.004 Amp	29.21 mm	35 ns
5962-8700201TA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm	19.05 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	19.05 mm	45 ns
5962-3829414MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.0003 Amp	37.1475 mm	25 ns
TTS92256GK-45M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.02 Amp		45 ns
TTS92256T-30C-3	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.02 Amp		30 ns
6116LA25TPB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0						25 ns
7024L70JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		16	CHIP CARRIER				125 Cel		4KX16	4K		-55 Cel		QUAD		S-PQCC-J84		5.5 V				65536 bit	4.5 V								70 ns
TTS92256GK-150M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.002 Amp		150 ns
7024S70PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V			Not Qualified	65536 bit	4.5 V		e3	30	260		.00003 Amp		70 ns
8403615LA	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24	1	5.5 V	5.08 mm	7.62 mm	Qualified	16384 bit	4.5 V		e0		240	YES	.0002 Amp	32.004 mm	120 ns
5962-8866205NA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.02 Amp	37.1475 mm	35 ns
5962-8866513ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm	29.464 mm	Not Qualified	32768 bit	4.5 V	ARBITER	e0					29.464 mm	45 ns
TTS92256N-85M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K		-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.0005 Amp		85 ns
5962-8866512UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	285 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F68		5.5 V	3.05 mm	24 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	24.08 mm	55 ns
5962-8687509XA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.03 Amp	60.96 mm	90 ns
7024L70GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V			Not Qualified	65536 bit	4.5 V		e3				.004 Amp		70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.