Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY14V101QS-SF108XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V							10.2865 mm
CY62126EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16 mA	65536 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	1048576 bit	2.2 V		e1	20	260		.000003 Amp	8 mm	45 ns
CY62157EV30LL-45BVXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	8388608 bit	2.2 V		e1	20	260	YES	.000008 Amp	8 mm	45 ns
CY62168EV30LL-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	16777216 bit	2.2 V		e1	20	260	YES	.00001 Amp	8 mm	45 ns
CY7C1041GN-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	5		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm		4194304 bit	4.5 V		e3	30	260	YES	.008 Amp	18.415 mm	10 ns
CY7S1061GE30-10BVM	Infineon Technologies	STANDARD SRAM	MILITARY	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		1048576 words				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	125 Cel		1MX16	1M	2.2 V	-55 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e0		220			8 mm	10 ns
CY62167EV18LL-55BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm		6 mm	Not Qualified	16777216 bit	1.65 V		e1	20	260		.00001 Amp	8 mm	55 ns
CY7C1018DV33-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	3.63 V	3.556 mm		7.5819 mm	Not Qualified	1048576 bit	2.97 V		e4	20	260		.003 Amp	20.828 mm	10 ns
CY14V101QS-BK108XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1					8 mm
CY14V101QS-BK108XQ	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1		260			8 mm
CY62167EV18LL-55BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm		6 mm	Not Qualified	16777216 bit	1.65 V		e1	20	260		.00001 Amp	8 mm	55 ns
CY62168EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	16777216 bit	2.2 V		e1	20	260		.00001 Amp	8 mm	45 ns
CY7C1049G30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V							18.415 mm	10 ns
CY14B108L-ZS45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	57 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	40	260		.01 Amp	18.415 mm	45 ns
CY14B101Q2A-SXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.00015 Amp	4.889 mm
CY14B104LA-ZS45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	45 ns
CY62148EV30LL-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.2 V		e3	20	260		.000007 Amp	20.95 mm	45 ns
CY62148GN-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V				260			20.95 mm	45 ns
CY62126EV30LL-45ZSXI	Infineon Technologies	STANDARD SRAM		44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	65536 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		1048576 bit	2.2 V		e4	20	260	YES	.000003 Amp	18.415 mm	45 ns
CY62157ELL-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	BGA48,6X8,30		SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	4.5 V		e4	30	260		.000008 Amp	18.415 mm	45 ns
CY62157EV18LL-55BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm		6 mm	Not Qualified	8388608 bit	1.65 V		e1	20	260		.000003 Amp	8 mm	55 ns
CY62167EV30LL-45BVI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	16777216 bit	2.2 V	IT ALSO OPERATES AT 2.2V TO 3.6V	e0	20	260			8 mm	45 ns
CY62167G30-45BVXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	36 mA	1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	8		.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1		260	YES	.000016 Amp	8 mm	45 ns
CY62167G30-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	36 mA	1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP48,47,20	8		.5 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V				260	YES	.000016 Amp	18.4 mm	45 ns
CY62167GE30-45ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		1MX16	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V		e3					18.4 mm	45 ns
CY7C1041G30-10VXIT	Infineon Technologies	STANDARD SRAM		44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		DUAL		R-PDSO-J44		3.6 V	3.7592 mm	100 MHz	10.16 mm		4194304 bit	2.2 V					YES	.008 Amp	28.575 mm	10 ns
CY7C1041GN30-10BVJXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM	1	R-PBGA-B48		3.6 V	1 mm		6 mm		4194304 bit	2.2 V					YES	.008 Amp	8 mm	10 ns
CY7C1049G30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V		e4	30	260			18.415 mm	10 ns
CY62167G30-45BVXAT	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	125 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1		260	YES		8 mm	45 ns
CY14E101J2-SXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5	5	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.00015 Amp	4.889 mm
CY62126EV30LL-45BVXI	Infineon Technologies	STANDARD SRAM		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16 mA	65536 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		1048576 bit	2.2 V		e1	20	260	YES	.000003 Amp	8 mm	45 ns
CY62128ELL-45ZXAT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e3	20	260		.000004 Amp	18.4 mm	45 ns
CY62148EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B36	3	3.6 V	1 mm		6 mm	Not Qualified	4194304 bit	2.2 V		e1		260	YES	.000007 Amp	8 mm	45 ns
CY62157EV30LL-55ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	125 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.2 V		e4	20	260	YES	.00003 Amp	18.415 mm	55 ns
CY62167ELL-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3					Not Qualified	16777216 bit			e3	20	260				45 ns
CY62167GN30-45ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V			30	260			18.4 mm	45 ns
CY7C1041G30-10BVXI	Infineon Technologies	STANDARD SRAM		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	100 MHz	6 mm		4194304 bit	2.2 V		e1		260	YES	.008 Amp	8 mm	10 ns
CY7C1069G30-10BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1		260			8 mm	10 ns
CY7C1079DV33-12BAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	4194304 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	4MX8	4M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
CY7C1079DV33-12BAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	4194304 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	4MX8	4M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
CY7C1360C-166AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	180 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e4	40	260		.04 Amp	20 mm	3.5 ns
CY7C1041G30-10BVXIT	Infineon Technologies	STANDARD SRAM		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	100 MHz	6 mm		4194304 bit	2.2 V		e1		260	YES	.008 Amp	8 mm	10 ns
CY7C1061G30-10ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V				260			18.4 mm	10 ns
CY7C1470V33-167AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	2MX36	2M	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3.4 ns
CY7C1051DV33-12ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	3 V		e3	40	260		.02 Amp	18.415 mm	12 ns
CY62128ELL-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e3	20	260		.000004 Amp	18.4 mm	45 ns
CY7C1041G-10VXI	Infineon Technologies	STANDARD SRAM		44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	5		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm	100 MHz	10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1051DV33-12ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	3 V		e3	40	260		.02 Amp	18.415 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.