Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1514KV18-300BZXI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	910 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e1	20	260			15 mm	.45 ns
CY7C1518KV18-250BZXI	Infineon Technologies	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	430 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C1525KV18-250BZXC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	640 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e1	20	260			15 mm	.45 ns
CY7C15632KV18-450BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.34 Amp	15 mm	.45 ns
CY7C1570KV18-550BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	970 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.38 Amp	15 mm	.45 ns
CY7C1614KV18-250BZI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	950 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX36	4M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0		260	NO	.37 Amp	17 mm	.45 ns
CY7C1618KV18-333BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	650 mA	8388608 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260		.41 Amp	17 mm	.45 ns
CY7C1620KV18-250BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	660 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX36	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260		.37 Amp	17 mm	.45 ns
CY7C1625KV18-250BZXI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	950 mA	16777216 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	16MX9	16M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260	NO	.37 Amp	17 mm	.45 ns
CY7C1645KV18-450BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1290 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX36	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260		.44 Amp	17 mm	.45 ns
CY7C1668KV18-450BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1	40	260			17 mm	.45 ns
CY7C1670KV18-550BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX36	4M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1	40	260			17 mm	.45 ns
CY7C2163KV18-550BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.34 Amp	15 mm	.45 ns
CY7C2265KV18-550BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1210 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.36 Amp	15 mm	.45 ns
CY7C2265KV18-550BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX36	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1					15 mm	.45 ns
CY7C2270KV18-550BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	890 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.36 Amp	15 mm	.45 ns
CY7C25632KV18-400BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	710 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V		e1	30	260		.32 Amp	15 mm	.45 ns
CY7C25652KV18-550BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1310 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.38 Amp	15 mm	.45 ns
CY7C2642KV18-333BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1	40	260			17 mm	.45 ns
CY7C2644KV18-333BZI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX36	4M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0					17 mm	.45 ns
CY7C2663KV18-550BZI	Infineon Technologies	QDR II PLUS SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1090 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	8MX18	8M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.5 Amp	17 mm	.45 ns
CY7C4042KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		2MX36	2M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C4121KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4122KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
STK12C68-SF25	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5		1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm		8.6865 mm		65536 bit	4.5 V					YES	.0015 Amp	18.3895 mm	25 ns
STK12C68-SF25ITR	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5		1.27 mm	85 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm		8.6865 mm		65536 bit	4.5 V					YES	.0025 Amp	18.3895 mm	25 ns
FMX1108-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	256 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDSO-G24						Not Qualified	2048 bit							.00004 Amp		100 ns
FM1408-80PSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	16384 bit							.0001 Amp		80 ns
CY7S1061G18-15ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	2.2 V	1.2 mm		10.16 mm		16777216 bit	1.65 V							22.415 mm	10 ns
FMX1208-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-XDIP-T24						Not Qualified	4096 bit							.00004 Amp		100 ns
CYD09S72V18-200BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	790 mA	131072 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	128KX72	128K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	200 MHz	23 mm	Not Qualified	9437184 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.2 Amp	23 mm	9 ns
5962F1120202VXA	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		2MX36	2M		-55 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
CYWT1543AV18-250GCQB	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	PGA	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	SYNCHRONOUS	1100 mA	4194304 words	SEPARATE	1.8		18	GRID ARRAY	PGA165,11X15		1.27 mm	105 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		PERPENDICULAR	2	R-CPGA-P165		1.9 V	5.38 mm	250 MHz	21 mm		75497472 bit	1.7 V					NO	.45 Amp	25 mm	.85 ns
CY7B162A-25PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0						25 ns
TTS92256N-45C-2	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28						Not Qualified	262144 bit							.02 Amp		45 ns
TTS92256NC-12C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit							.02 Amp		12 ns
ICY7C1367B-166BGI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	180 mA	524288 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel		BOTTOM		R-PBGA-B119				166 MHz		Not Qualified	9437184 bit							.03 Amp		3.5 ns
CY7B162A-25LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						25 ns
FMX1208-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	512 words		5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDSO-G24						Not Qualified	4096 bit							.00004 Amp		100 ns
5962F1120101VXA	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	4194304 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX18	4M	1.7 V	-55 Cel		BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Qualified	75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
TTS92256NC-15C-6	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28						Not Qualified	262144 bit							.02 Amp		15 ns
GVT72256A16TS-10L	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V							18.56 mm	10 ns
CY7S1041GE30-10BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		4194304 bit	2.2 V		e1					8 mm	10 ns
CYD18S36V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	800 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	200 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	19 mm	9 ns
CYXXXX-3XW11I	Infineon Technologies
FM1108-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDIP-T24						Not Qualified	2048 bit							.00004 Amp		100 ns
CYXXXX-2XW14I	Infineon Technologies
CYD18S18V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	750 mA	1048576 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	19 mm	11 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.