Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
1.2 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP8,.3 |
SRAMs |
2.54 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
DUAL |
R-PDIP-T8 |
Not Qualified |
65536 bit |
.00001 Amp |
||||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
44 |
QFP |
PLASTIC/EPOXY |
YES |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
32768 words |
COMMON |
5 |
5 |
9 |
FLATPACK |
QFP44(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
32KX9 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
Not Qualified |
294912 bit |
e0 |
9 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
2048 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
16384 bit |
.00004 Amp |
200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
131072 words |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.000015 Amp |
60 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
270 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B119 |
100 MHz |
Not Qualified |
9437184 bit |
e0 |
.01 Amp |
9 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
DUAL |
R-XDIP-T28 |
Not Qualified |
262144 bit |
.02 Amp |
35 ns |
||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
2MX36 |
2M |
-40 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
3.4 ns |
||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
128X8 |
128 |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
1024 bit |
.00004 Amp |
200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
QDR SRAM |
INDUSTRIAL |
165 |
CGA |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
36 |
GRID ARRAY |
1.27 mm |
105 Cel |
2MX36 |
2M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-CBGA-X165 |
1 |
1.9 V |
5.38 mm |
21 mm |
75497472 bit |
1.7 V |
e0 |
25 mm |
.85 ns |
||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
115 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
CHIP CARRIER |
LCC28,.35X.55 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N28 |
Not Qualified |
65536 bit |
e0 |
15 ns |
|||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
35 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
275 mA |
1048576 words |
COMMON |
2.5 |
2.5 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
167 MHz |
Not Qualified |
18874368 bit |
e1 |
20 |
260 |
.07 Amp |
3.4 ns |
|||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
128X8 |
128 |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
1024 bit |
.00004 Amp |
100 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
4194304 bit |
4.5 V |
e4 |
18.415 mm |
10 ns |
|||||||||||||||||||||||
Infineon Technologies |
TIN LEAD |
1 |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
1.5 mA |
2048 words |
5 |
5 |
8 |
IN-LINE |
DIP8(UNSPEC) |
SRAMs |
85 Cel |
2KX8 |
2K |
-40 Cel |
DUAL |
R-PDIP-T8 |
Not Qualified |
16384 bit |
.00001 Amp |
240 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
160 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
.02 Amp |
55 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
MULTI-PORT SRAM |
INDUSTRIAL |
484 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
262144 words |
COMMON |
3.3 |
3.3 |
72 |
GRID ARRAY |
BGA484,22X22,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
256KX72 |
256K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
2 |
S-PBGA-B484 |
3 |
3.465 V |
1.9 mm |
100 MHz |
23 mm |
Not Qualified |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE |
e1 |
20 |
260 |
.075 Amp |
23 mm |
5.2 ns |
|||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDSO-J44 |
5.5 V |
3.76 mm |
10.16 mm |
4194304 bit |
4.5 V |
28.6 mm |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
2048 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
16384 bit |
.00004 Amp |
150 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
75 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
.0015 Amp |
35 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
16 mA |
256 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.5 |
SRAMs |
1.27 mm |
70 Cel |
256X8 |
256 |
0 Cel |
DUAL |
R-PDSO-G24 |
Not Qualified |
2048 bit |
.00004 Amp |
200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
4096 bit |
.00004 Amp |
150 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
QDR II PLUS SRAM |
MILITARY |
165 |
CGA |
RECTANGULAR |
200k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
SYNCHRONOUS |
1040 mA |
4194304 words |
COMMON |
1.8 |
36 |
GRID ARRAY |
CGA165,11X15,50 |
1.27 mm |
125 Cel |
3-STATE |
4MX36 |
4M |
1.7 V |
-55 Cel |
TIN LEAD |
BOTTOM |
2 |
R-CBGA-X165 |
1 |
1.9 V |
5.38 mm |
250 MHz |
21 mm |
150994944 bit |
1.7 V |
e0 |
NO |
.39 Amp |
25 mm |
.85 ns |
||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
1024 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
1KX8 |
1K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
8192 bit |
.00004 Amp |
200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
15 mA |
2048 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
16384 bit |
.0001 Amp |
150 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
256 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
256X8 |
256 |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
2048 bit |
.00004 Amp |
150 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
160 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
.02 Amp |
12 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
.25 mA |
2048 words |
5 |
5 |
8 |
IN-LINE |
DIP8,.3 |
SRAMs |
2.54 mm |
85 Cel |
2KX8 |
2K |
-40 Cel |
DUAL |
R-PDIP-T8 |
Not Qualified |
16384 bit |
.000001 Amp |
3000 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
125 Cel |
512KX16 |
512K |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.194 mm |
10.16 mm |
8388608 bit |
3 V |
18.415 mm |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
QDR II SRAM |
165 |
CGA |
RECTANGULAR |
200k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-PRF-38535 Class V |
UNSPECIFIED |
PARALLEL |
SYNCHRONOUS |
1080 mA |
4194304 words |
COMMON |
1.8 |
36 |
GRID ARRAY |
CGA165,11X15,50 |
1.27 mm |
125 Cel |
4MX36 |
4M |
1.7 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-CBGA-X165 |
1 |
1.9 V |
5.38 mm |
250 MHz |
21 mm |
Not Qualified |
150994944 bit |
1.7 V |
e0 |
NO |
.39 Amp |
25 mm |
||||||||||||||||
|
Infineon Technologies |
MULTI-PORT SRAM |
INDUSTRIAL |
256 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
830 mA |
1048576 words |
COMMON |
1.5 |
1.5/1.8 |
18 |
GRID ARRAY, LOW PROFILE |
BGA256,16X16,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
1.4 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
1.58 V |
1.7 mm |
200 MHz |
19 mm |
Not Qualified |
18874368 bit |
1.42 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V |
e1 |
20 |
260 |
.35 Amp |
19 mm |
9 ns |
|||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
65536 bit |
e0 |
25 ns |
|||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
1.5 mA |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP8,.3 |
SRAMs |
2.54 mm |
85 Cel |
512X8 |
512 |
-40 Cel |
DUAL |
R-XDIP-T8 |
Not Qualified |
4096 bit |
.00001 Amp |
240 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
e0 |
20 ns |
|||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
15 mA |
2048 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
16384 bit |
.0001 Amp |
150 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
4096 bit |
.00004 Amp |
200 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
18.4 mm |
10 ns |
||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
4096 bit |
.00004 Amp |
100 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
e0 |
20 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
MULTI-PORT SRAM |
INDUSTRIAL |
484 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
262144 words |
1.5 |
72 |
GRID ARRAY |
1 mm |
85 Cel |
256KX72 |
256K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B484 |
3 |
1.58 V |
2.16 mm |
23 mm |
Not Qualified |
18874368 bit |
1.42 V |
e1 |
23 mm |
3.3 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
DUAL |
R-PDSO-J44 |
5.5 V |
3.76 mm |
10.16 mm |
4194304 bit |
4.5 V |
28.6 mm |
10 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
CHIP CARRIER |
LCC28,.35X.55 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N28 |
Not Qualified |
65536 bit |
e0 |
35 ns |
|||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
28 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
30 mA |
32768 words |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
.000025 Amp |
150 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
160 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
DUAL |
R-XDIP-T28 |
Not Qualified |
262144 bit |
.02 Amp |
25 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.