Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
QDR SRAM |
MILITARY |
165 |
CGA |
RECTANGULAR |
300k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
SYNCHRONOUS |
1275 mA |
4194304 words |
SEPARATE |
1.8 |
1.8 |
18 |
GRID ARRAY |
CGA165,11X15,50 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4MX18 |
4M |
-55 Cel |
TIN LEAD |
BOTTOM |
R-CBGA-X165 |
1 |
1.9 V |
5.38 mm |
250 MHz |
21 mm |
Not Qualified |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e0 |
.57 Amp |
25 mm |
.85 ns |
|||||||||||||
Infineon Technologies |
QDR SRAM |
MILITARY |
165 |
CGA |
RECTANGULAR |
300k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY |
1.27 mm |
125 Cel |
4MX18 |
4M |
-55 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-CBGA-X165 |
1 |
1.9 V |
5.38 mm |
21 mm |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e0 |
25 mm |
|||||||||||||||||||||||
Infineon Technologies |
QDR II PLUS SRAM |
MILITARY |
165 |
CGA |
RECTANGULAR |
300k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
SYNCHRONOUS |
1700 mA |
2097152 words |
COMMON |
1.8 |
36 |
GRID ARRAY |
CGA165,11X15,50 |
1.27 mm |
125 Cel |
3-STATE |
2MX36 |
2M |
1.7 V |
-55 Cel |
BOTTOM |
2 |
R-CBGA-X165 |
1 |
1.9 V |
5.38 mm |
250 MHz |
21 mm |
Qualified |
75497472 bit |
1.7 V |
e0 |
NO |
.66 Amp |
25 mm |
.85 ns |
||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
110 mA |
131072 words |
COMMON |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
DUAL |
1 |
R-PDSO-J32 |
5.5 V |
3.68 mm |
10.16 mm |
1048576 bit |
4.5 V |
YES |
.01 Amp |
20.955 mm |
20 ns |
|||||||||||||||||||
|
Infineon Technologies |
MULTI-PORT SRAM |
COMMERCIAL |
484 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
700 mA |
131072 words |
COMMON |
1.5 |
1.5/1.8 |
72 |
GRID ARRAY |
BGA484,22X22,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
128KX72 |
128K |
1.4 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
2 |
S-PBGA-B484 |
3 |
1.58 V |
2.16 mm |
167 MHz |
23 mm |
Not Qualified |
9437184 bit |
1.42 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V |
e1 |
.2 Amp |
23 mm |
11 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
MILITARY |
36 |
DFP |
RECTANGULAR |
300k Rad(Si) |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-PRF-38535 Class V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3.3 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
512KX8 |
512K |
-55 Cel |
NICKEL GOLD |
DUAL |
R-XDFP-F36 |
1 |
3.6 V |
2.99 mm |
12.19 mm |
Qualified |
4194304 bit |
3 V |
e4 |
23.37 mm |
12 ns |
||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
10 mA |
512 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-PDSO-G24 |
Not Qualified |
4096 bit |
.0001 Amp |
200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
TIN LEAD |
1 |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
2048 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
16384 bit |
.00004 Amp |
200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
25 ns |
||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
28 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
CHIP CARRIER |
LCC28,.35X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
-55 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N28 |
Not Qualified |
65536 bit |
e0 |
45 ns |
||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
16 mA |
512 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-PDSO-G24 |
Not Qualified |
4096 bit |
.00004 Amp |
150 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
e0 |
45 ns |
|||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
16 mA |
128 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.5 |
SRAMs |
1.27 mm |
70 Cel |
128X8 |
128 |
0 Cel |
DUAL |
R-PDSO-G24 |
Not Qualified |
1024 bit |
.00004 Amp |
150 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
2048 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
16384 bit |
.00004 Amp |
200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
720 mA |
65536 words |
COMMON |
5 |
5 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
Not Qualified |
2097152 bit |
e0 |
.032 Amp |
25 ns |
||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
1024 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
1KX8 |
1K |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
8192 bit |
.00004 Amp |
150 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
65536 bit |
e0 |
45 ns |
|||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
4.5 mA |
8192 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
DUAL |
R-PDSO-G24 |
Not Qualified |
65536 bit |
.0001 Amp |
80 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
1.5 mA |
2048 words |
5 |
5 |
8 |
IN-LINE |
DIP8,.3 |
SRAMs |
2.54 mm |
85 Cel |
2KX8 |
2K |
-40 Cel |
DUAL |
R-XDIP-T8 |
Not Qualified |
16384 bit |
.00001 Amp |
240 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
4096 bit |
.00004 Amp |
150 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
1.8 |
32 |
GRID ARRAY |
1.27 mm |
85 Cel |
512KX32 |
512K |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
2.2 V |
2.02 mm |
14 mm |
16777216 bit |
1.65 V |
IT ALSO OPERATES AT 3V NOMINAL SUPPLY |
22 mm |
15 ns |
|||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
16 mA |
128 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.5 |
SRAMs |
1.27 mm |
70 Cel |
128X8 |
128 |
0 Cel |
DUAL |
R-PDSO-G24 |
Not Qualified |
1024 bit |
.00004 Amp |
100 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
45 ns |
||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
160 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
DUAL |
R-XDIP-T28 |
Not Qualified |
262144 bit |
.02 Amp |
15 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
4194304 bit |
2.2 V |
e4 |
18.415 mm |
10 ns |
|||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
4096 bit |
.00004 Amp |
200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
.3 mA |
2048 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
85 Cel |
2KX8 |
2K |
-40 Cel |
DUAL |
R-PDSO-G8 |
Not Qualified |
16384 bit |
.00006 Amp |
3000 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
160 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
.02 Amp |
25 ns |
||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
4.5 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
65536 bit |
.0001 Amp |
80 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
115 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
CHIP CARRIER |
LCC28,.35X.55 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N28 |
Not Qualified |
65536 bit |
e0 |
15 ns |
|||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
65536 bit |
e0 |
35 ns |
|||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
115 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
e0 |
15 ns |
|||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
65 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
.0015 Amp |
45 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
e0 |
25 ns |
||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
115 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
IN-LINE |
DIP28,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
15 ns |
|||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
DUAL |
R-XDIP-T28 |
Not Qualified |
262144 bit |
.015 Amp |
25 ns |
|||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
180 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
DUAL |
R-XDIP-T28 |
Not Qualified |
262144 bit |
.02 Amp |
15 ns |
|||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
115 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
65536 bit |
e0 |
15 ns |
|||||||||||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
16 mA |
1024 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
1KX8 |
1K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
8192 bit |
.00004 Amp |
200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
4194304 bit |
4.5 V |
18.56 mm |
15 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.