Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
FMX1008-150SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	128 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		128X8	128		0 Cel		DUAL		R-PDSO-G24						Not Qualified	1024 bit							.00004 Amp		150 ns
CY7B162A-20KMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28						Not Qualified	65536 bit			e0						20 ns
TTS92256G-45C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.02 Amp		45 ns
CYXXXX-2XWE	Infineon Technologies
CY7B161A-35LC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR		CERAMIC	YES				NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						35 ns
CYWT1545AV18-250GCQB	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	PGA	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	SYNCHRONOUS	1140 mA	2097152 words	SEPARATE	1.8		36	GRID ARRAY	PGA165,11X15		1.27 mm	105 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	R-CPGA-P165	1	1.9 V	5.38 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.385 Amp	25 mm	.85 ns
FM1408-150SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	2048 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDSO-G24						Not Qualified	16384 bit							.00004 Amp		150 ns
CY7B162A-35DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						35 ns
CYPT2643KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V		e0			NO	.39 Amp	25 mm	.85 ns
CYRS1049DV33-12FZMB	Infineon Technologies	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	95 mA	524288 words	COMMON	3.3	3.3	8	FLATPACK	FL36,.5	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-55 Cel	GOLD OVER NICKEL	DUAL		R-CDFP-F36	1	3.6 V	2.99 mm		12.19 mm	Not Qualified	4194304 bit	3 V		e4				.015 Amp	23.37 mm	12 ns
CYXXXX-1X11I	Infineon Technologies
CY7B161A-25DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						25 ns
CY7S1041G30-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		3.6 V	3.7592 mm		10.16 mm		4194304 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			28.575 mm	10 ns
CY7B161A-45PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0						45 ns
TTS92256N-20C-2	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28						Not Qualified	262144 bit							.02 Amp		20 ns
TTS92256G-35M-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.015 Amp		35 ns
TTS92256GC-12C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.02 Amp		12 ns
FMX1408-200PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	16384 bit							.00004 Amp		200 ns
SMD5962-9232404MXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			55 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		55 ns
GVT72256A16J-10	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	10 ns
FM1408-80DSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T24						Not Qualified	16384 bit							.0001 Amp		80 ns
5962R2020201VXC	Infineon Technologies	STANDARD SRAM	MILITARY	54	SSOP	RECTANGULAR	200k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38534 Class V	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, SHRINK PITCH	SOP54,.56,32		.8 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		DUAL	1	R-PDSO-G54		3.6 V	3.038 mm		11.836 mm	Qualified	16777216 bit	2.2 V					YES	.05 Amp	22.403 mm	10 ns
CY7B161A-25DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						25 ns
CYXXXX-1X14	Infineon Technologies
CYRS1543AV18-1XWI	Infineon Technologies	QDR SRAM	MILITARY		DIE	UNSPECIFIED	300k Rad(Si)	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	UNCASED CHIP				125 Cel		4MX18	4M		-55 Cel		UPPER		X-XUUC-N		1.9 V					75497472 bit	1.7 V	BURST ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED
CYD18S36V18-200BBAXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	800 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	200 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	17 mm	3.3 ns
CYPT1061G30-10GGMB	Infineon Technologies	STANDARD SRAM	MILITARY	54	SSOP	RECTANGULAR	200k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, SHRINK PITCH	SOP54,.56,32		.8 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		DUAL	1	R-PDSO-G54		3.6 V	3.038 mm		11.836 mm		16777216 bit	2.2 V					YES	.05 Amp	22.403 mm	10 ns
CY7B162A-15DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						15 ns
FM1408S-150DSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T24						Not Qualified	16384 bit							.0001 Amp		150 ns
CYD18S72V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1					23 mm	3.3 ns
FM25256-G	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES				GULL WING			5.5 mA	32768 words		5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G8						Not Qualified	262144 bit							.00015 Amp
FMX1108-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDIP-T24						Not Qualified	2048 bit							.00004 Amp		100 ns
GVT72256A16J-12L	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	12 ns
FM1208S-200CC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-XDIP-T24						Not Qualified	4096 bit							.0001 Amp		200 ns
SMD5962-9232406MXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		35 ns
TTS92256G-20M-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.015 Amp		20 ns
CYXXXX-3X11I	Infineon Technologies
CY7B161A-45LC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR		CERAMIC	YES				NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						45 ns
FM1008-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL		R-PDIP-T24						Not Qualified	1024 bit							.00004 Amp		150 ns
FMX1408-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	16384 bit							.00004 Amp		150 ns
TTS92256N-25C-2	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28						Not Qualified	262144 bit							.02 Amp		25 ns
FMX1208-200SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	512 words		5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDSO-G24						Not Qualified	4096 bit							.00004 Amp		200 ns
FM24C08-PS	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			.3 mA	1024 words		5	5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		1KX8	1K		-40 Cel		DUAL		R-PDIP-T8						Not Qualified	8192 bit							.00006 Amp		3000 ns
CY7B162A-25VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0						25 ns
CYXXXX-2XW11I	Infineon Technologies
CY7B162A-45VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0						45 ns
CY7S1041G30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		3.6 V	3.7592 mm		10.16 mm		4194304 bit	2.2 V							28.575 mm	10 ns
CYD36S18V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1160 mA	2097152 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.59 Amp	27 mm	13 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.