Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
GVT72256A16TS-15	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V							18.56 mm	15 ns
CY7B161A-35DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						35 ns
CY7B161A-35PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0						35 ns
CYD18S72V-133BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	580 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	133 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260		.075 Amp	23 mm	5 ns
CY7B162A-20DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						20 ns
FM1408-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	16384 bit							.00004 Amp		100 ns
CY7B162A-25DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						25 ns
CYPT1545AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		2MX36	2M		-55 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
CY7B162A-15PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0						15 ns
CYM1831LPZ-35C	Infineon Technologies	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	720 mA	65536 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64						Not Qualified	2097152 bit			e0				.032 Amp		35 ns
CYXXXX-2X14E	Infineon Technologies
FM25040-PT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			1.5 mA	512 words		5	5	8	IN-LINE	DIP8(UNSPEC)	SRAMs		85 Cel		512X8	512		-40 Cel		DUAL		R-PDIP-T8						Not Qualified	4096 bit							.00001 Amp		240 ns
CYWT1542AV18-250GCQB	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	CGA	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	105 Cel		4MX18	4M		-40 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm		75497472 bit	1.7 V		e0					25 mm	.85 ns
CY7B161A-25LC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR		CERAMIC	YES				NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						25 ns
FM1208-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDIP-T24						Not Qualified	4096 bit							.00004 Amp		100 ns
CYXXXX-1XWE	Infineon Technologies
CYXXXX-3XW14E	Infineon Technologies
CY7S1049GE30-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm		10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
CYD18S36V18-167BBAXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	17 mm	4 ns
FM1408-80PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	16384 bit							.0001 Amp		80 ns
SPG032D970R3R	Infineon Technologies	PSEUDO STATIC RAM	INDUSTRIAL							1	CMOS				ASYNCHRONOUS		2097152 words		3.3		16					85 Cel		2MX16	2M		-40 Cel						3.6 V					33554432 bit	2.7 V								70 ns
FMX1408-150SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	2048 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDSO-G24						Not Qualified	16384 bit							.00004 Amp		150 ns
FM24VN02-G	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			1 mA	32768 words			2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G8						Not Qualified	262144 bit							.00015 Amp
GVT72256A16TS-12I	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V							18.56 mm	12 ns
CYXXXX-3X14I	Infineon Technologies
FM1208-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDIP-T24						Not Qualified	4096 bit							.00004 Amp		150 ns
FM1608-80DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			4.5 mA	8192 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL		R-XDIP-T24						Not Qualified	65536 bit							.0001 Amp		80 ns
CYPT1645KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1040 mA	4194304 words	SEPARATE	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX36	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
CYD36S36V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	85 Cel		1MX36	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1					23 mm	4 ns
CY7B162A-20LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						20 ns
SMD5962-9232405MXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			65 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		45 ns
CYXXXX-1XW14	Infineon Technologies
SMD5962-9232405MXX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			65 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		45 ns
CYXXXX-3XW11	Infineon Technologies
CY7S1049G30-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm		10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
CY7B161A-45LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						45 ns
FMX1308-200SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	1024 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		1KX8	1K		0 Cel		DUAL		R-PDSO-G24						Not Qualified	8192 bit							.00004 Amp		200 ns
CYPT2644KV18-250GCMB	Infineon Technologies																															TIN LEAD				1									e0
CYPT1643KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	SEPARATE	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
TTS92256G-20C-2	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	32768 words		5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		32KX8	32K	4.5 V	0 Cel		DUAL		R-PDSO-G32						Not Qualified	262144 bit							.015 Amp		20 ns
FMX1308-150SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	1024 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		1KX8	1K		0 Cel		DUAL		R-PDSO-G24						Not Qualified	8192 bit							.00004 Amp		150 ns
CYD18S36V18-167BBAXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	720 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	17 mm	4 ns
FMX1208-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-XDIP-T24						Not Qualified	4096 bit							.00004 Amp		200 ns
CY7B161A-25PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0						25 ns
CY7B162A-35KMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28						Not Qualified	65536 bit			e0						35 ns
SMD5962-9232405MYX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			65 mA	8192 words		5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-XQCC-N28						Not Qualified	65536 bit							.0015 Amp		45 ns
FM1008-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL		R-XDIP-T24						Not Qualified	1024 bit							.00004 Amp		100 ns
SMD5962-9232404MXX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			55 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.