Infineon Technologies SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
FM1608S180CI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			25 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel		DUAL		R-PDIP-T28						Not Qualified	65536 bit							.00005 Amp		180 ns
FM24C256-SE	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			1.2 mA	32768 words		5	5	8	SMALL OUTLINE	SOP8,.3	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G8						Not Qualified	262144 bit							.0001 Amp
FM28V010-SGTR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			12 mA	16384 words			2.5/3.3	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	85 Cel		16KX8	16K		-40 Cel		DUAL		R-PDSO-G28						Not Qualified	131072 bit							.00015 Amp		105 ns
TTS92256G-25M-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.015 Amp		25 ns
CYXXXX-2X14I	Infineon Technologies
FM24CZ16-S	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			.25 mA	2048 words		5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		2KX8	2K		-40 Cel		DUAL		R-PDSO-G8						Not Qualified	16384 bit							.000001 Amp		3000 ns
TTS92256N-55C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit							.02 Amp		55 ns
5962R1821403VXF	Infineon Technologies	STANDARD SRAM	MILITARY	165	CGA	RECTANGULAR	100k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class V	UNSPECIFIED	PARALLEL	SYNCHRONOUS		8388608 words		1.8		18	GRID ARRAY			1.27 mm	125 Cel		8MX18	8M		-55 Cel		BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	150994944 bit	1.7 V							25 mm
5962R1821503VXF	Infineon Technologies	STANDARD SRAM	MILITARY	165	CGA	RECTANGULAR	100k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class V	UNSPECIFIED	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		4MX36	4M		-55 Cel		BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	150994944 bit	1.7 V							25 mm
CG9108AT	Infineon Technologies	STANDARD SRAM		48	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM	1	R-PBGA-B48		3.6 V	1 mm		6 mm		4194304 bit	2.2 V					YES	.008 Amp	8 mm	10 ns
CYDMX128B16-65BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	8KX16	8K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		131072 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	65 ns
CYDMX256A16-90BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	16384 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	16KX16	16K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		262144 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	90 ns
CYDMX256A16-65BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	40 mA	16384 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	16KX16	16K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		262144 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	65 ns
CYDMX128A16-65BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	8KX16	8K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		131072 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	65 ns
CYDMX064A16-90BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4096 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	4KX16	4K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		65536 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	90 ns
CYRS1061G30-10GGMB	Infineon Technologies	STANDARD SRAM	MILITARY	54	SSOP	RECTANGULAR	200k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, SHRINK PITCH	SOP54,.56,32		.8 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		DUAL	1	R-PDSO-G54	1	3.6 V	3.038 mm		11.836 mm		16777216 bit	2.2 V					YES	.05 Amp	22.403 mm	10 ns
CY7B173A-9NC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	QFP			PLASTIC/EPOXY	YES				GULL WING	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	FLATPACK	QFP44(UNSPEC)	SRAMs		70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD								Not Qualified	294912 bit			e0						9 ns
CYD36S72V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1430 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.59 Amp	27 mm	13 ns
CYRS2644KV18-250GCMB	Infineon Technologies																															TIN LEAD				1									e0
CYD18S72V-100BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	100 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260		.075 Amp	23 mm	5.2 ns
CY7S1061GE-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm		16777216 bit	2.2 V							8 mm	10 ns
CYDMX256B16-65BVXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	100	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	40 mA	16384 words	COMMON	1.8	1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B100	3	1.9 V	1 mm		6 mm	Not Qualified	262144 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT	e1	30	260	YES	.000006 Amp	6 mm	65 ns
CYRS1643KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	SEPARATE	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
GVT72256A16J-15I	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	15 ns
CY7B175-11NC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	QFP			PLASTIC/EPOXY	YES				GULL WING	PARALLEL	SYNCHRONOUS	210 mA	32768 words	COMMON	5	5	9	FLATPACK	QFP44(UNSPEC)	SRAMs		70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD								Not Qualified	294912 bit			e0						11.5 ns
CY7S1061G30-10ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V							18.4 mm	10 ns
GVT72256A16TS-10I	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V							18.56 mm	10 ns
FM24CZ16-PT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			.25 mA	2048 words		5	5	8	IN-LINE	DIP8(UNSPEC)	SRAMs		85 Cel		2KX8	2K		-40 Cel		DUAL		R-PDIP-T8						Not Qualified	16384 bit							.000001 Amp		3000 ns
5962R1821401VXF	Infineon Technologies	QDR II SRAM		165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class V	UNSPECIFIED	PARALLEL	SYNCHRONOUS	900 mA	8388608 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel		8MX18	8M	1.7 V	-55 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	150994944 bit	1.7 V		e0			NO	.36 Amp	25 mm
CYPT1542AV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	4194304 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX18	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
CY7S1061G30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		16777216 bit	2.2 V							22.415 mm	10 ns
CY7S1041G30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V		e4					18.415 mm	10 ns
CY7S1061GE30-10BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1					8 mm	10 ns
CY7S1049G30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm		10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
CY7S1041G30-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		4194304 bit	2.2 V		e1					8 mm	10 ns
CYD18S18V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	690 mA	1048576 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	19 mm	11 ns
CYRS2643KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	COMMON	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V		e0			NO	.39 Amp	25 mm	.85 ns
CYPT1542AV18-250GLMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1700 mA	4194304 words	COMMON	1.8		18	GRID ARRAY	LGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX18	4M	1.7 V	-55 Cel		BOTTOM	2	R-CBGA-N165	1	1.9 V	3.07 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
GVT72256A16TS-15LI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V							18.56 mm	15 ns
GVT72256A16J-12LI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	12 ns
GVT72256A16TS-15I	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V							18.56 mm	15 ns
CYRS1544AV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	2097152 words	COMMON	1.8	1.8	36	GRID ARRAY	CGA165,11X15,50	SRAMs	1.27 mm	125 Cel	3-STATE	2MX36	2M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
CY7S1061G18-15ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	2.2 V	1.2 mm		10.16 mm		16777216 bit	1.65 V							22.415 mm	10 ns
CYD02S36V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	65536 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	2359296 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	17 mm	4 ns
5962R1821404VXF	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	780 mA	8388608 words	SEPARATE	1.8		18	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	8MX18	8M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
GVT7164B19C-10	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm		19.125 mm		1179648 bit	4.75 V							19.125 mm	10 ns
CYPT1544AV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	2097152 words	COMMON	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	2MX36	2M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
GVT72256A16J-10L	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.