Infineon Technologies SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CYXXXX-3XW14I

Infineon Technologies

FMX1408-100DC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

16 mA

2048 words

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

2KX8

2K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

16384 bit

.00004 Amp

100 ns

FMX1008-200DC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

16 mA

128 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

128X8

128

0 Cel

DUAL

R-XDIP-T24

Not Qualified

1024 bit

.00004 Amp

200 ns

CY7B162A-45DMB

Infineon Technologies

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX4

16K

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

45 ns

FMX1008-200SC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16 mA

128 words

5

5

8

SMALL OUTLINE

SOP24,.5

SRAMs

1.27 mm

70 Cel

128X8

128

0 Cel

DUAL

R-PDSO-G24

Not Qualified

1024 bit

.00004 Amp

200 ns

SMD5962-9232405MYA

Infineon Technologies

NON-VOLATILE SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

65 mA

8192 words

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

8KX8

8K

-55 Cel

QUAD

R-XQCC-N28

Not Qualified

65536 bit

.0015 Amp

45 ns

5962R1821402VXF

Infineon Technologies

QDR II PLUS SRAM

MILITARY

165

CGA

RECTANGULAR

200k Rad(Si)

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

UNSPECIFIED

PARALLEL

SYNCHRONOUS

780 mA

8388608 words

COMMON

1.8

18

GRID ARRAY

CGA165,11X15,50

1.27 mm

125 Cel

3-STATE

8MX18

8M

1.7 V

-55 Cel

TIN LEAD

BOTTOM

2

R-CBGA-X165

1

1.9 V

5.38 mm

250 MHz

21 mm

Qualified

150994944 bit

1.7 V

e0

NO

.39 Amp

25 mm

.85 ns

CY7B161A-45DC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

45 ns

CYXXXX-3X11E

Infineon Technologies

CYXXXX-WW14

Infineon Technologies

GVT72256A16TS-12

Infineon Technologies

STANDARD SRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

4194304 bit

4.5 V

18.56 mm

12 ns

FM24VN02-GTR

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

1 mA

32768 words

2.5/3.3

8

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

85 Cel

32KX8

32K

-40 Cel

DUAL

R-PDSO-G8

Not Qualified

262144 bit

.00015 Amp

CYPT1545AV18-250GLMB

Infineon Technologies

QDR SRAM

MILITARY

165

LGA

RECTANGULAR

300k Rad(Si)

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-PRF-38535

NO LEAD

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY

1.27 mm

125 Cel

2MX36

2M

-55 Cel

BOTTOM

R-CBGA-N165

1

1.9 V

3.07 mm

21 mm

75497472 bit

1.7 V

e0

25 mm

.85 ns

FM24164-PS

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

.3 mA

2048 words

5

5

8

IN-LINE

DIP8,.3

SRAMs

2.54 mm

85 Cel

2KX8

2K

-40 Cel

DUAL

R-PDIP-T8

Not Qualified

16384 bit

.00006 Amp

3000 ns

CYD18S18V18-167BBAXC

Infineon Technologies

MULTI-PORT SRAM

COMMERCIAL

256

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

690 mA

1048576 words

COMMON

1.5

1.5/1.8

18

GRID ARRAY, LOW PROFILE

BGA256,16X16,40

SRAMs

1 mm

70 Cel

3-STATE

1MX18

1M

1.4 V

0 Cel

TIN SILVER COPPER

BOTTOM

2

S-PBGA-B256

3

1.58 V

1.7 mm

167 MHz

17 mm

Not Qualified

18874368 bit

1.42 V

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

e1

30

260

.3 Amp

17 mm

4 ns

FMX1108-100DC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

16 mA

256 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

256X8

256

0 Cel

DUAL

R-XDIP-T24

Not Qualified

2048 bit

.00004 Amp

100 ns

TTS92256N-20C-1

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

160 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.02 Amp

20 ns

5962-1821201QXC

Infineon Technologies

NON-VOLATILE SRAM

MILITARY

32

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

MIL-PRF-38535 Class Q

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

125 Cel

128KX8

128K

-55 Cel

GOLD

DUAL

R-XDIP-T32

1

5.5 V

Qualified

1048576 bit

4.5 V

e4

35 ns

CY7B174A-14NC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

44

QFP

PLASTIC/EPOXY

YES

GULL WING

PARALLEL

SYNCHRONOUS

180 mA

32768 words

COMMON

5

5

9

FLATPACK

QFP44(UNSPEC)

SRAMs

70 Cel

3-STATE

32KX9

32K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

Not Qualified

294912 bit

e0

14 ns

CYD18S36V18-200BBXI

Infineon Technologies

MULTI-PORT SRAM

INDUSTRIAL

256

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

860 mA

524288 words

COMMON

1.5

1.5/1.8

36

GRID ARRAY, LOW PROFILE

BGA256,16X16,40

SRAMs

1 mm

85 Cel

3-STATE

512KX36

512K

1.4 V

-40 Cel

TIN SILVER COPPER

BOTTOM

2

S-PBGA-B256

3

1.58 V

1.7 mm

200 MHz

19 mm

Not Qualified

18874368 bit

1.42 V

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

e1

20

260

.35 Amp

19 mm

9 ns

CYXXXX-2XW14

Infineon Technologies

GVT72256A16J-15L

Infineon Technologies

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

4194304 bit

4.5 V

28.6 mm

15 ns

CY7S1062G-10BGXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

1.8

32

GRID ARRAY

1.27 mm

85 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B119

2.2 V

2.02 mm

14 mm

16777216 bit

1.65 V

IT ALSO OPERATES AT 3V NOMINAL SUPPLY

22 mm

10 ns

TTS92256G-35C-1

Infineon Technologies

STANDARD SRAM

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

QUAD

R-XQCC-N32

Not Qualified

262144 bit

.02 Amp

35 ns

CYD18S36V18-167BBXI

Infineon Technologies

MULTI-PORT SRAM

INDUSTRIAL

256

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

780 mA

524288 words

COMMON

1.5

1.5/1.8

36

GRID ARRAY, LOW PROFILE

BGA256,16X16,40

SRAMs

1 mm

85 Cel

3-STATE

512KX36

512K

1.4 V

-40 Cel

TIN SILVER COPPER

BOTTOM

2

S-PBGA-B256

3

1.58 V

1.7 mm

167 MHz

19 mm

Not Qualified

18874368 bit

1.42 V

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

e1

20

260

.35 Amp

19 mm

11 ns

FM1408-100SC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16 mA

2048 words

5

5

8

SMALL OUTLINE

SOP24,.5

SRAMs

1.27 mm

70 Cel

2KX8

2K

0 Cel

DUAL

R-PDSO-G24

Not Qualified

16384 bit

.00004 Amp

100 ns

TTS92256N-35M-1

Infineon Technologies

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.015 Amp

35 ns

SMD5962-9232406MYX

Infineon Technologies

NON-VOLATILE SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

75 mA

8192 words

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

8KX8

8K

-55 Cel

QUAD

R-XQCC-N28

Not Qualified

65536 bit

.0015 Amp

35 ns

CYXXXX-3XW11E

Infineon Technologies

FM1208-200SC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16 mA

512 words

5

5

8

SMALL OUTLINE

SOP24,.4

SRAMs

1.27 mm

70 Cel

512X8

512

0 Cel

DUAL

R-PDSO-G24

Not Qualified

4096 bit

.00004 Amp

200 ns

CYD18S72V18-167BBXC

Infineon Technologies

MULTI-PORT SRAM

COMMERCIAL

484

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

262144 words

1.5

72

GRID ARRAY

1 mm

70 Cel

256KX72

256K

0 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B484

3

1.58 V

2.16 mm

23 mm

Not Qualified

18874368 bit

1.42 V

e1

23 mm

4 ns

FMX1008-150PC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

16 mA

128 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

128X8

128

0 Cel

DUAL

R-PDIP-T24

Not Qualified

1024 bit

.00004 Amp

150 ns

CY7B161A-35LMB

Infineon Technologies

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N28

Not Qualified

65536 bit

e0

35 ns

FM1308-100SC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16 mA

1024 words

5

5

8

SMALL OUTLINE

SOP24,.5

SRAMs

1.27 mm

70 Cel

1KX8

1K

0 Cel

DUAL

R-PDSO-G24

Not Qualified

8192 bit

.00004 Amp

100 ns

TTS92256N-55M-1

Infineon Technologies

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

160 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.02 Amp

55 ns

FM1308-200DC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

16 mA

1024 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

1KX8

1K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

8192 bit

.00004 Amp

200 ns

TTS92256NC-15C-5

Infineon Technologies

STANDARD SRAM

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

160 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

QUAD

R-XQCC-N32

Not Qualified

262144 bit

.02 Amp

15 ns

FM1008-200DC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

16 mA

128 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

128X8

128

0 Cel

DUAL

R-XDIP-T24

Not Qualified

1024 bit

.00004 Amp

200 ns

ICY7C1373D-100BGI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

119

HBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

175 mA

1048576 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, HEAT SINK/SLUG

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B119

3

3.63 V

2.4 mm

100 MHz

14 mm

Not Qualified

18874368 bit

3.135 V

FLOW-THRU ARCHITECTURE

e0

.07 Amp

22 mm

8.5 ns

FM24CZ16-C

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

.25 mA

2048 words

5

5

8

IN-LINE

DIP8,.3

SRAMs

2.54 mm

85 Cel

2KX8

2K

-40 Cel

DUAL

R-XDIP-T8

Not Qualified

16384 bit

.000001 Amp

3000 ns

CY7S1061G30-10ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

18.4 mm

10 ns

FMX1308-100PC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

16 mA

1024 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

1KX8

1K

0 Cel

DUAL

R-PDIP-T24

Not Qualified

8192 bit

.00004 Amp

100 ns

GVT72256A16J-12I

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE

1.27 mm

85 Cel

256KX16

256K

-40 Cel

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

4194304 bit

4.5 V

28.6 mm

12 ns

CYXXXX-1XWI

Infineon Technologies

FM25VN02-DGTR

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

SON

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

NO LEAD

2.5 mA

32768 words

3.3

3.3

8

SMALL OUTLINE

SOLCC8,.16,37

SRAMs

.95 mm

85 Cel

32KX8

32K

-40 Cel

DUAL

R-PDSO-N8

Not Qualified

262144 bit

.00015 Amp

FMX1008-150DC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

16 mA

128 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

128X8

128

0 Cel

DUAL

R-XDIP-T24

Not Qualified

1024 bit

.00004 Amp

150 ns

FM1308-150SC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16 mA

1024 words

5

5

8

SMALL OUTLINE

SOP24,.5

SRAMs

1.27 mm

70 Cel

1KX8

1K

0 Cel

DUAL

R-PDSO-G24

Not Qualified

8192 bit

.00004 Amp

150 ns

FM1208S-200PC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

10 mA

512 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

512X8

512

0 Cel

DUAL

R-PDIP-T24

Not Qualified

4096 bit

.0001 Amp

200 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.