Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
FMX1108-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDIP-T24						Not Qualified	2048 bit							.00004 Amp		150 ns
ICY7C1373D-100BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.63 V	2.4 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THRU ARCHITECTURE	e1	20	260		.07 Amp	22 mm	8.5 ns
GVT72256A16TS-10LI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V							18.56 mm	10 ns
SMD5962-9232406MXA	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-XDIP-T28						Not Qualified	65536 bit							.0015 Amp		35 ns
FMX1108-200SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	256 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDSO-G24						Not Qualified	2048 bit							.00004 Amp		200 ns
CYXXXX-3X11	Infineon Technologies
FM1008-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL		R-PDIP-T24						Not Qualified	1024 bit							.00004 Amp		100 ns
FM24164-C	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			.3 mA	2048 words		5	5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel		DUAL		R-XDIP-T8						Not Qualified	16384 bit							.00006 Amp		3000 ns
CY7B161A-20DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0						20 ns
CYXXXX-1XW11I	Infineon Technologies
FM1408-80SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		CERAMIC	YES		CMOS		GULL WING			15 mA	2048 words		5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDSO-G24						Not Qualified	16384 bit							.0001 Amp		80 ns
CYRS1644KV18-250GCMB	Infineon Technologies																															TIN LEAD				1									e0
CY7B161A-25LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0						25 ns
FM1608-80PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			4.5 mA	8192 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	65536 bit							.0001 Amp		80 ns
FMX1108-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-XDIP-T24						Not Qualified	2048 bit							.00004 Amp		200 ns
ICY7C1373DV25-100BGI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	2.38 V	-40 Cel		BOTTOM		R-PBGA-B119				100 MHz		Not Qualified	18874368 bit							.11 Amp		8.5 ns
FM1108-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	256 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDSO-G24						Not Qualified	2048 bit							.00004 Amp		100 ns
FM1408S-150PSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	16384 bit							.0001 Amp		150 ns
5962-1821201QXCTR	Infineon Technologies
FM1208-250PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			8 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDIP-T24						Not Qualified	4096 bit							.0001 Amp		250 ns
TTS92256G-45M-2	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit							.015 Amp		45 ns
CYXXXX-2XW11E	Infineon Technologies
CY7B175-7NC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	QFP			PLASTIC/EPOXY	YES				GULL WING	PARALLEL	SYNCHRONOUS	210 mA	32768 words	COMMON	5	5	9	FLATPACK	QFP44(UNSPEC)	SRAMs		70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD								Not Qualified	294912 bit			e0						7.5 ns
FMX1008-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	128 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		128X8	128		0 Cel		DUAL		R-PDSO-G24						Not Qualified	1024 bit							.00004 Amp		100 ns
FM1108-200PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDIP-T24						Not Qualified	2048 bit							.00004 Amp		200 ns
CYRS1542AV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1700 mA	4194304 words	COMMON	1.8	1.8	18	GRID ARRAY	CGA165,11X15,50	SRAMs	1.27 mm	125 Cel	3-STATE	4MX18	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
FM1108-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-XDIP-T24						Not Qualified	2048 bit							.00004 Amp		100 ns
FM1408-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T24						Not Qualified	16384 bit							.00004 Amp		100 ns
FM25VN02-DG	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SON	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		NO LEAD			2.5 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOLCC8,.16,37	SRAMs	.95 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-N8						Not Qualified	262144 bit							.00015 Amp
FM1308-200SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	1024 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		1KX8	1K		0 Cel		DUAL		R-PDSO-G24						Not Qualified	8192 bit							.00004 Amp		200 ns
FM1108-150DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-XDIP-T24						Not Qualified	2048 bit							.00004 Amp		150 ns
TTS92256N-20M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit							.02 Amp		20 ns
FM24C08-PT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			.3 mA	1024 words		5	5	8	IN-LINE	DIP8(UNSPEC)	SRAMs		85 Cel		1KX8	1K		-40 Cel		DUAL		R-PDIP-T8						Not Qualified	8192 bit							.00006 Amp		3000 ns
FM1308-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	1024 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		1KX8	1K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	8192 bit							.00004 Amp		150 ns
FM24C04-C	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			.1 mA	512 words		5	5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		512X8	512		-40 Cel		DUAL		R-XDIP-T8						Not Qualified	4096 bit							.00006 Amp		3500 ns
FM1208-250PSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			8 mA	512 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDIP-T24						Not Qualified	4096 bit							.0001 Amp		250 ns
CY7B161A-20PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0						20 ns
CY7B162A-20PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0						20 ns
FMX1108-150DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-XDIP-T24						Not Qualified	2048 bit							.00004 Amp		150 ns
GVT7164B19C-8	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm		19.125 mm		1179648 bit	4.75 V							19.125 mm	8 ns
CY7B162A-45PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0						45 ns
FMX1108-150SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	256 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDSO-G24						Not Qualified	2048 bit							.00004 Amp		150 ns
GVT72256A16J-15LI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	15 ns
CYXXXX-3XWI	Infineon Technologies
FMX1408-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T28						Not Qualified	16384 bit							.00004 Amp		100 ns
CYXXXX-WAF	Infineon Technologies
CYD36S36V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1					23 mm	4 ns
CYXXXX-1X14E	Infineon Technologies

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.