Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
HYB511002-10	Infineon Technologies	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	1048576 bit			e0						100 ns
HYE18P128160AF-9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	40 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	134217728 bit	1.7 V		e1				.00025 Amp	8 mm	7 ns
HYE18P32160AC-L9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0				.00012 Amp	8 mm	70 ns
HYE18P32160AC-L15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0				.00012 Amp	8 mm	85 ns
HYE18P32161AC-L70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0				.000025 Amp	8 mm	70 ns
HYE18P128160AF-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	30 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	134217728 bit	1.7 V		e1				.00025 Amp	8 mm	11 ns
HYE18P64160AF-12.5	Infineon Technologies	PSEUDO STATIC RAM		54	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm			4MX16	4M				BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V							8 mm
CYXXXX-3XWE	Infineon Technologies
CYD36S18V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.7 Amp	27 mm	13 ns
CYPT2642KV18-250GCMB	Infineon Technologies																																TIN LEAD				1									e0
CYRS2642KV18-250GCMB	Infineon Technologies																																TIN LEAD				1									e0
CYRS1545AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA		RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1275 mA	2097152 words	SEPARATE	1.8	1.8	36	GRID ARRAY	CGA165,11X15,50	SRAMs	1.27 mm	125 Cel	3-STATE	2MX36	2M		-55 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.57 Amp	25 mm	.85 ns
CYXXXX-3XW14	Infineon Technologies
CY7S1041G-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm		4194304 bit	4.5 V		e4					18.415 mm	10 ns
5962-1821101QXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP		RECTANGULAR		UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K		-55 Cel	GOLD	DUAL		R-XDIP-T32	1	5.5 V				Qualified	262144 bit	4.5 V		e4						35 ns
CYD36S36V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1220 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.59 Amp	27 mm	13 ns
CYPT2645KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA		RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1040 mA	4194304 words	COMMON	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX36	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V		e0			NO	.39 Amp	25 mm	.85 ns
CYXXXX-2XW11	Infineon Technologies
CYXXXX-1X14I	Infineon Technologies
CYXXXX-2X14	Infineon Technologies
FM1108-150SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	256 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDSO-G24						Not Qualified	2048 bit							.00004 Amp		150 ns
CYRS1645KV18-250GCMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	CGA		RECTANGULAR	200k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1040 mA	4194304 words	SEPARATE	1.8		36	GRID ARRAY	CGA165,11X15,50		1.27 mm	125 Cel	3-STATE	4MX36	4M	1.7 V	-55 Cel	TIN LEAD	BOTTOM	2	R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0			NO	.39 Amp	25 mm	.85 ns
CY7S1061GE-10ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm		12 mm		16777216 bit	4.5 V							18.4 mm	10 ns
CYXXXX-1XW14I	Infineon Technologies
FM1208-250SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			8 mA	512 words		5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDSO-G24						Not Qualified	4096 bit							.0001 Amp		250 ns
FMX1208-150SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	512 words		5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDSO-G24						Not Qualified	4096 bit							.00004 Amp		150 ns
CYPT1049DV33-12FZMB	Infineon Technologies	STANDARD SRAM	MILITARY	36	DFP		RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	FLATPACK			1.27 mm	125 Cel		512KX8	512K		-55 Cel	GOLD OVER NICKEL	DUAL		R-CDFP-F36	1	3.6 V	2.99 mm		12.19 mm		4194304 bit	3 V		e4					23.37 mm	12 ns
CY7S1049GE30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm		10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
CYD09S72V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		1.5		72	GRID ARRAY			1 mm	85 Cel		128KX72	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	9437184 bit	1.42 V		e1	40	260			23 mm	3.3 ns
CYD18S72V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	85 Cel		256KX72	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1	40	260			23 mm	4 ns
CY7S1061G30-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1					8 mm	10 ns
CYXXXX-2X11	Infineon Technologies
CYPT1544AV18-250GLMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	LGA		RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1700 mA	2097152 words	COMMON	1.8		36	GRID ARRAY	LGA165,11X15,50		1.27 mm	125 Cel	3-STATE	2MX36	2M	1.7 V	-55 Cel		BOTTOM	2	R-CBGA-N165	1	1.9 V	3.07 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.66 Amp	25 mm	.85 ns
CYD09S72V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		1.5		72	GRID ARRAY			1 mm	85 Cel		128KX72	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	9437184 bit	1.42 V		e1					23 mm	4 ns
CY7S1061GE30-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1					8 mm	10 ns
CY7S1061G30-10BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1					8 mm	10 ns
FMX1408-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	2048 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDSO-G24						Not Qualified	16384 bit							.00004 Amp		100 ns
FM24C16-PT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			.3 mA	2048 words		5	5	8	IN-LINE	DIP8(UNSPEC)	SRAMs		85 Cel		2KX8	2K		-40 Cel		DUAL		R-PDIP-T8						Not Qualified	16384 bit							.00006 Amp		3000 ns
5962F1120102VXA	Infineon Technologies	QDR SRAM	MILITARY	165	CGA		RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	125 Cel		4MX18	4M		-55 Cel		BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
CYD36S72V18-167BGI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1730 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	512KX72	512K	1.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	167 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e0				.7 Amp	27 mm	4 ns
CYM1831LPZ-45C	Infineon Technologies	SRAM MODULE	COMMERCIAL	64	ZIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	720 mA	65536 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64						Not Qualified	2097152 bit			e0				.032 Amp		45 ns
GVT72256A16TS-12L	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V							18.56 mm	12 ns
CY7S1061GE30-10ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V							18.4 mm	10 ns
CYD36S72V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1550 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	512KX72	512K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.7 Amp	27 mm	13 ns
FM1008-200SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	128 words		5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	70 Cel		128X8	128		0 Cel		DUAL		R-PDSO-G24						Not Qualified	1024 bit							.00004 Amp		200 ns
CYRS1642KV18-250GCMB	Infineon Technologies																																TIN LEAD				1									e0
CY7S1061G30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		16777216 bit	2.2 V							22.415 mm	10 ns
CY7S1061GE-10ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm		12 mm		16777216 bit	4.5 V							18.4 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.