Infineon Technologies SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1614KV18-250BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY				85 Cel		4MX36	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V				Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1
CY7C25422KV18-333BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1					15 mm	.45 ns
CY7C13451G-100BZXE	Infineon Technologies	CACHE SRAM	AUTOMOTIVE	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	125 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		13 mm		4718592 bit	3.135 V		e1		260			15 mm
CY7C25702KV18-500BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	890 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	500 MHz	13 mm	Not Qualified	75497472 bit	1.7 V		e1				.36 Amp	15 mm	.45 ns
CY7C1069GN30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		2MX8	2M		-40 Cel		DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		16777216 bit	3 V							22.415 mm	10 ns
STK14CA8C-5C35M	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	5		8	IN-LINE	DIP32,.3		2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	GOLD	DUAL		R-CDIP-T32	1	5.5 V	3.96 mm		7.62 mm		1048576 bit	4.5 V		e4			YES	.01 Amp	40.64 mm	35 ns
CY14B101LA-SZ25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.5 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.005 Amp	20.726 mm	25 ns
CY7C1350G-200AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	265 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	2.8 ns
CY7C1069GE30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		2MX8	2M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		16777216 bit	2.2 V				260			22.415 mm	10 ns
CY7C1061GE-10BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	5.5 V	1 mm		6 mm		16777216 bit	4.5 V		e1		260			8 mm	10 ns
CY7C1062GN30-10BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		32	GRID ARRAY			1.27 mm	85 Cel		512KX32	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm		14 mm		16777216 bit	2.2 V		e1		260			22 mm	10 ns
CY62148G18-55ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		1.8		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	2.2 V	1.2 mm		10.16 mm		4194304 bit	1.65 V				260			20.95 mm	55 ns
CY7C1570KV18BZXI	Infineon Technologies	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1					15 mm	.45 ns
CY7C1562XV18-450BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1205 mA	4194304 words	SEPARATE	1.8	1.5,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.001205 Amp	15 mm	.45 ns
CY7C1011G30-10ZSXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V		e4		260			18.415 mm	10 ns
CY7C1612KV18-333BZC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	970 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0		260	NO	.41 Amp	17 mm	.45 ns
CY7C0450V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	32768 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	32KX40	32K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	1310720 bit							.00001 Amp		4 ns
CY14B116L-ZS45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		2MX8	2M		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.194 mm		10.16 mm		16777216 bit	2.7 V							18.415 mm	45 ns
CY7C1668KV18-550BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1	40	260			17 mm	.45 ns
CY7C1473BV33-133BZXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	133 MHz	15 mm	Not Qualified	75497472 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	20	260		.305 Amp	17 mm	6.5 ns
CY7C1325G-133AXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	225 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260		.04 Amp	20 mm	6.5 ns
CY14B101Q3A-SF104XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.7 V		e3				.00015 Amp	10.2865 mm
CY7C1515KV18-250BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	680 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C1371KV33-133AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX36	512K		0 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V				260			20 mm	6.5 ns
CY62137FV18LL-55BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	18 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm		6 mm	Not Qualified	2097152 bit	1.65 V		e1	30	260		.000004 Amp	8 mm	55 ns
CY62136FV30LL-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000004 Amp	18.415 mm	45 ns
CY7C1061GE-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	5.5 V	1.2 mm		10.16 mm		16777216 bit	4.5 V				260			22.415 mm	10 ns
CY62148GN30-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		10.16 mm		4194304 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			20.95 mm	45 ns
CY14B104LA-ZSP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260			22.415 mm	45 ns
CY7C1314KV18-250BZC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	670 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	220		.25 Amp	15 mm	.45 ns
CY7C1514KV18-250BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	790 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e0	20	235			15 mm	.45 ns
CY7C1471BV33-133AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	305 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260			20 mm	6.5 ns
CY7C0452V18-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	128KX40	128K	1.71 V	-40 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	5242880 bit							.01 Amp		3.5 ns
CY7C25652KV18-400BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1000 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.32 Amp	15 mm	.45 ns
CY7C1170KV18-450BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.31 Amp	15 mm	.45 ns
CY7C1049G-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J36	3	5.5 V	3.7592 mm		10.16 mm		4194304 bit	4.5 V		e4	30	260			23.495 mm	10 ns
CY7C1061G30-10ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V				260			18.4 mm	10 ns
CY7C1625KV18-250BZXC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	780 mA	16777216 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	16MX9	16M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260	NO	.37 Amp	17 mm	.45 ns
STK14EC8-TF25	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		512KX8	512K		0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.19 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e4	20	260			18.415 mm	25 ns
CY62137FV30LL-45ZSXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000004 Amp	18.415 mm	45 ns
CY7C1380D-167BZXCT	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	167 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260		.07 Amp	15 mm	3.4 ns
CY7C1411KV18-300BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	520 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	33554432 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	220		.27 Amp	15 mm	.45 ns
CY7C4022KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		S-PBGA-B361		1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V			NOT SPECIFIED	NOT SPECIFIED			21 mm
CY62157EV30LL-45ZXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	8388608 bit	2.2 V		e4	20	260	YES	.000008 Amp	18.4 mm	45 ns
CY14B256P-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.49 mm	Not Qualified	262144 bit	2.7 V		e3	40	260		.005 Amp	10.28 mm
CY7C1470BV33-200BZXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260			17 mm	3 ns
CY7C1526KV18-333BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.29 Amp	15 mm	.45 ns
CY14B064I-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		8KX8	8K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.495 mm	Not Qualified	65536 bit	2.7 V		e4		260		.00025 Amp	10.28 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.