Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SAB81C54-P	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	512X8	512		-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16						Not Qualified	4096 bit			e0				.000001 Amp		150 ns
SAB81C50-P	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words			3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel		256X8	256		-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	2048 bit			e0				.000001 Amp		900 ns
SAB81C54-T	Infineon Technologies	STANDARD SRAM	OTHER	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	SMALL OUTLINE	SOP20,.4	SRAMs	1.27 mm	70 Cel	3-STATE	512X8	512		-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDSO-G20						Not Qualified	4096 bit			e0				.000001 Amp		150 ns
SAE81C80A	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	85 Cel	3-STATE	504X8	504		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44						Not Qualified				e0				.000001 Amp		186 ns
SAE81C54G	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	SMALL OUTLINE	SOP20,.4	SRAMs	1.27 mm	85 Cel	3-STATE	512X8	512		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDSO-G20						Not Qualified	4096 bit			e0				.000001 Amp		350 ns
S70KS1281DPBHI023	Infineon Technologies	PSEUDO STATIC RAM	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	72 mA	16777216 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		16MX8	16M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	1.95 V	1 mm	166 MHz	6 mm		134217728 bit	1.7 V						.0004 Amp	8 mm
SAB81C52P	Infineon Technologies	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	.1 mA	256 words		5	5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X8	256	1 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	2048 bit			e0				.000001 Amp		200 ns
SAE81C80B	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	110 Cel	3-STATE	504X8	504		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44						Not Qualified				e0				.000001 Amp		166 ns
SAE81C80	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	85 Cel	3-STATE	504X8	504		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44						Not Qualified				e0				.000001 Amp		166 ns
SAB81C51-P	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words			3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel		256X8	256		-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	2048 bit			e0				.000001 Amp		900 ns
SAE81C54	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	512X8	512		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16						Not Qualified	4096 bit			e0				.000001 Amp		350 ns
SAE81C52G	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	.5 mA	256 words		5	5	8	SMALL OUTLINE	SOP20,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X8	256	1 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20						Not Qualified	2048 bit			e0				.000001 Amp		200 ns
SAE81C52P	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	.5 mA	256 words		5	5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	256X8	256	1 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	2048 bit			e0				.000001 Amp		200 ns
SAE81C54P	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	512X8	512		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16						Not Qualified	4096 bit			e0				.000001 Amp		150 ns
SAB81C80	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	504X8	504		0 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44						Not Qualified				e0				.000001 Amp		166 ns
SAB81C54	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	512X8	512		-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16						Not Qualified	4096 bit			e0				.000001 Amp		150 ns
S80KS2563GABHV023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS2563GABHM020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS2563GABHA020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS2563GABHV020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS5122GABHI020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHM020	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	125 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS2563GABHI020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS5122GABHM023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	125 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHV023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS2562GABHM020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS2562GABHA020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS5123GABHV020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS2562GABHI020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1	30	260
S80KS5123GABHI023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS2562GABHI023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS2563GABHB023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS5123GABHA023	Infineon Technologies	PSEUDO STATIC RAM																																	3
CYD36S36V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1					23 mm	3.3 ns
S80KS2562GABHV023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS2563GABHA023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS5123GABHM020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS2562GABHA023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS2562GABHB020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS2563GABHI023	Infineon Technologies	PSEUDO STATIC RAM																																	3
CYD36S36V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1330 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.7 Amp	27 mm	13 ns
S80KS5123GABHI020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS2563GABHM023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS5123GABHM023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS2562GABHM023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS5123GABHB023	Infineon Technologies	PSEUDO STATIC RAM																																	3
S80KS5123GABHB020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
S80KS5123GABHV023	Infineon Technologies	PSEUDO STATIC RAM																																	3

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.