Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CY7B162A-45LC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	QCCN		RECTANGULAR	CERAMIC	YES				NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0					45 ns
CY7B162A-35DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0					35 ns
GVT72256A16J-12	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V						28.6 mm	12 ns
FM1208-250DSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			8 mA	512 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-XDIP-T24						Not Qualified	4096 bit						.0001 Amp		250 ns
FM24C16-PS	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			.3 mA	2048 words		5	5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel		DUAL		R-PDIP-T8						Not Qualified	16384 bit						.00006 Amp		3000 ns
FM1408S-150SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			15 mA	2048 words		5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDSO-G24						Not Qualified	16384 bit						.0001 Amp		150 ns
CY7S1041G30-10BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		4194304 bit	2.2 V		e1				8 mm	10 ns
CYXXXX-1XW11E	Infineon Technologies
FM24C16-C	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			.3 mA	2048 words		5	5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel		DUAL		R-XDIP-T8						Not Qualified	16384 bit						.00006 Amp		3000 ns
CY7B175-8NC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	QFP			PLASTIC/EPOXY	YES				GULL WING	PARALLEL	SYNCHRONOUS	210 mA	32768 words	COMMON	5	5	9	FLATPACK	QFP44(UNSPEC)	SRAMs		70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD								Not Qualified	294912 bit			e0					8.5 ns
FM1408-150DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T24						Not Qualified	16384 bit						.00004 Amp		150 ns
CY7S1041GE30-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		4194304 bit	2.2 V		e1				8 mm	10 ns
FM1108-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-XDIP-T24						Not Qualified	2048 bit						.00004 Amp		200 ns
TTS92256N-55C-2	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28						Not Qualified	262144 bit						.02 Amp		55 ns
CY7B162A-20VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0					20 ns
CY7B161A-45DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP		RECTANGULAR	CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0					45 ns
TTS92256G-55C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit						.02 Amp		55 ns
CY7B162A-35LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN		RECTANGULAR	CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0					35 ns
GVT72256A16TS-10	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V						18.56 mm	10 ns
FM24164-PT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			.3 mA	2048 words		5	5	8	IN-LINE	DIP8(UNSPEC)	SRAMs		85 Cel		2KX8	2K		-40 Cel		DUAL		R-PDIP-T8						Not Qualified	16384 bit						.00006 Amp		3000 ns
TTS92256GC-15C-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN		RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32						Not Qualified	262144 bit						.015 Amp		15 ns
CY7B161A-20VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0					20 ns
FMX1108-200PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDIP-T24						Not Qualified	2048 bit						.00004 Amp		200 ns
CY7B162A-35VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0					35 ns
CYD18S18V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	770 mA	1048576 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	200 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.3 Amp	19 mm	9 ns
FM24C04-PT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			.1 mA	512 words		5	5	8	IN-LINE	DIP8(UNSPEC)	SRAMs		85 Cel		512X8	512		-40 Cel		DUAL		R-PDIP-T8						Not Qualified	4096 bit						.00006 Amp		3500 ns
FM1208-100SC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			16 mA	512 words		5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDSO-G24						Not Qualified	4096 bit						.00004 Amp		100 ns
FMX1308-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			16 mA	1024 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		1KX8	1K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	8192 bit						.00004 Amp		150 ns
FM24C08-S	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			.3 mA	1024 words		5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		1KX8	1K		-40 Cel		DUAL		R-PDSO-G8						Not Qualified	8192 bit						.00006 Amp		3000 ns
FM1408-80DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T24						Not Qualified	16384 bit						.0001 Amp		80 ns
CY7M194-20DC	Infineon Technologies	SRAM MODULE	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	325 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	262144 bit			e0			.2 Amp		20 ns
FM1308-150DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	1024 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		1KX8	1K		0 Cel		DUAL		R-XDIP-T24						Not Qualified	8192 bit						.00004 Amp		150 ns
HYE18P32160AF-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	85 ns
HYE18P32160AC-12.5	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	70 ns
HYE18P64160AF-9.6	Infineon Technologies	PSEUDO STATIC RAM		54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm			4MX16	4M				BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V						8 mm
HYE18P32160AC-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.00009 Amp	8 mm	85 ns
HYE18P32161AC-85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	17 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	85 ns
HYE18P16161AC-85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	17 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	85 ns
HYE18P128160AF-12.5	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel		BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	134217728 bit	1.7 V					.00025 Amp	8 mm	9 ns
HYE18P32161AC-70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	70 ns
HYE18P16161AC-70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	70 ns
HYE18P16161AC-L85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	17 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	85 ns
HYE18P32161AC-L85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	17 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.000025 Amp	8 mm	85 ns
HYE18P32160AC-9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.00009 Amp	8 mm	70 ns
HYE18P64160AF-15	Infineon Technologies	PSEUDO STATIC RAM		54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm			4MX16	4M				BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V						8 mm
HYE18P16161AC-L70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	70 ns
HYB511002-12	Infineon Technologies	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	1048576 bit			e0					120 ns
HYE18P32160AC-L12.5	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00012 Amp	8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.