Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C6407EC-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0			.00025 Amp		15 ns
MT5LC1M4D4TG-35	Micron Technology	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	4194304 bit			e0			.001 Amp		35 ns
MT58LC128K32B3S27BDC7-11	Micron Technology	STANDARD SRAM	COMMERCIAL	94	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	128KX32	128K		0 Cel		UPPER	1	X-XUUC-N94	3.6 V				Not Qualified	4194304 bit	3.135 V				YES			11 ns
MT5C1005DJ-20LPATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0		YES		18.44 mm	20 ns
MT5C2564DJ-20	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	262144 bit			e0			.005 Amp		20 ns
MT55L256V36PT-7.5	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.01 Amp	20 mm	4.2 ns
MT5LC2561-20PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		1	IN-LINE			2.54 mm	85 Cel		256KX1	256K		-40 Cel		DUAL	1	R-PDIP-T24	3.6 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V				NO		31.495 mm
MT58LC32K32E1LG-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	2.5,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V		e0		YES	.005 Amp	20 mm	8.5 ns
MT5LC2561DJ-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	262144 words	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	85 Cel	3-STATE	256KX1	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	3.6 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	3 V		e0		NO	.00005 Amp	15.9 mm	15 ns
MT58LC128K16D9LG-15P	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	200 mA	131072 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX16	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V		e0		YES	.002 Amp	20 mm	7 ns
MT45W1MV16PAFA-85LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48	1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V		e0				8 mm	85 ns
MT58LC64K18M1LG-9	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	225 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.7X.9	SRAMs	.65 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; BYTE WRITE CONTROL; SELF TIMED REGISTER	e0		YES	.002 Amp	20.05 mm	9 ns
MT5C6401C-35L	Micron Technology	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	65536 bit			e0			.00025 Amp		35 ns
MT55V512V32FT-8.8IT	Micron Technology
MT5C1628EC-45L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	16384 bit			e0			.0005 Amp		45 ns
MT58L1MY36FF-6.8IT	Micron Technology
MT5C1601-12LXT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0		NO	.0003 Amp	26.165 mm	12 ns
MT5LC256K16D4TG-20P	Micron Technology	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0		YES	.001 Amp	22.22 mm	20 ns
MT58LC32K32C5LG-6	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	83 MHz	14 mm	Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN	e0		YES	.005 Amp	20 mm	6 ns
MT58L256V36FB-8.8	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm	113 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0			.01 Amp	22 mm	7.5 ns
MT5C6408DJ-10L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0		YES	.0003 Amp	18.44 mm	10 ns
MT58L64L36PT-7.5T	Micron Technology	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		64KX36	64K		-40 Cel		QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V						20 mm	4 ns
MT58L512V18PF-6IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V		e1				15 mm	3.5 ns
MT59L128H36LB-6	Micron Technology	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	390 mA	131072 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm		3-STATE	128KX36	128K	3.1 V		TIN LEAD	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	BYTE WRITE	e0			.025 Amp	22 mm	7 ns
MT5LC512K8D4TG-35PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3		YES		23.52 mm	35 ns
MT45W4ML16BBB-856IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1	260		.00012 Amp	8 mm	85 ns
MT5C2564DJ-20PXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V				NO		15.9 mm	20 ns
MT5C6401DJ-20LXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.68 mm		7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0		NO	.0003 Amp	15.9 mm	20 ns
MT58LC32K36D7S25AWC2-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	UNCASED CHIP				70 Cel	3-STATE	32KX36	32K		0 Cel		UPPER	1	X-XUUC-N100	3.63 V				Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN			YES			7 ns
MT5LC2564SG-25XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	3 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	262144 bit			e0			.0003 Amp		25 ns
MT5LC512K8C3DJ-25LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.63 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V		e0		YES		20.98 mm	25 ns
MT58L128V32P1-7.5B	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	375 mA	131072 words	COMMON		2.5,3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119			133 MHz		Not Qualified	4194304 bit			e0			.01 Amp		4 ns
MT5C64K16A1TG-12LXT	Micron Technology	STANDARD SRAM	MILITARY	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		64KX16	64K	2 V	-55 Cel	MATTE TIN	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3		YES		20.95 mm
MT5C64K16A1TG-20LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		64KX16	64K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3		YES		20.95 mm
MT5LC2568-25LP	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3.63 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V		e0		YES	.00035 Amp	36.83 mm	25 ns
MT2LSYT3264T6G-6	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	630 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V				YES	.01 Amp		6 ns
MT5C6408-10LXT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28	5.5 V	4.32 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0		YES	.00025 Amp	36.83 mm	10 ns
MT58L512V18PT-6.6	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	3.3	2.5,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0			.01 Amp	20 mm	3.8 ns
MT5C1M4A1DJ25XT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	4194304 bit			e0					25 ns
MT58L256L32FB-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	262144 words	COMMON	3.3	3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3.135 V		e0			.01 Amp	22 mm	8.5 ns
MT5C1008SJ-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm		7.67 mm	Not Qualified	1048576 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0		YES	.00015 Amp	20.98 mm	20 ns
MT58LC128K32B4BG-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B119	3.6 V	2.4 mm	100 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0		YES	.01 Amp	22 mm	8.5 ns
MT5LC2568-25PXT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL	1	R-PDIP-T28	3.6 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V				YES		36.83 mm
MT59L64L32BT-7	Micron Technology	LATE-WRITE SRAM		100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm			64KX32	64K				QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V				YES		20 mm	4 ns
MT58LC64K18B3S27BDC3-10	Micron Technology	STANDARD SRAM	COMMERCIAL	77	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	UNCASED CHIP				70 Cel	3-STATE	64KX18	64K		0 Cel		UPPER	1	X-XUUC-N77	3.6 V				Not Qualified	1179648 bit	3.135 V				YES
MT5LC512K8D4DJ-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36	3.6 V	3.76 mm		10.21 mm	Not Qualified	4194304 bit	3 V				YES		23.52 mm	35 ns
MT5C2818EJ-12	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	310 mA	16384 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX18	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0		YES	.015 Amp	19.1262 mm	12 ns
MT5LC256K16D4DJ-25L	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	3.6 V	3.81 mm		10.21 mm	Not Qualified	4194304 bit	3 V		e0		YES	.0007 Amp	22.25 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.