Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT45W2MV16BFB-851IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0		.00011 Amp	8 mm	85 ns
MT5C2564DJ-20LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO		15.9 mm	20 ns
MT5C1001-35LPXT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0	NO	.001 Amp	35.05 mm	35 ns
MT5C1605DJ-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	85 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0	YES	.0003 Amp	15.9 mm	15 ns
MT58L64L36FT-6.8IT	Micron Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		64KX36	64K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V					20 mm	6.8 ns
MT58LC64K32F1LG-6TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX32	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm
MT58V512V36FT-7.5IT	Micron Technology
MT58L256V32DT-6.6	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	2.5,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0		.01 Amp	20 mm	3.8 ns
MT55L1MY18FF-11	Micron Technology	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	165 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165		3.465 V	1.2 mm	90 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0		.03 Amp	15 mm	8.5 ns
MT5C2568CW25	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	262144 bit			e0		.005 Amp		25 ns
MT55L128L36PT-7TR	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0	YES		20 mm	4 ns
MT58LC128K16C6LG-13P	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	215 mA	131072 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX16	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V		e0	YES	.002 Amp	20 mm	7 ns
MT58V512V32DF-6IT	Micron Technology
MT5C6406DJ-25LXT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.00025 Amp	18.44 mm	25 ns
MT5LC1008W-45LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	COMMON	3.3	3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		3.63 V	5.59 mm		15.24 mm	Not Qualified	1048576 bit	3 V		e0	YES		41.91 mm	45 ns
MT55L128L32P1B-10	Micron Technology	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119		3.465 V	2.4 mm	100 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0		.01 Amp	22 mm	5 ns
MT55L1MY36PT-6IT	Micron Technology
MT5C1601DJ-15LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO		15.9 mm	15 ns
MT4LS12832RZ20	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	720 mA	131072 words	COMMON	3.3	3.3	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64			13.843 mm			Not Qualified	4194304 bit			e0		.02 Amp		20 ns
MT5C1604-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.165 mm	35 ns
MT5LC2568DJ-20PXT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		32KX8	32K		-55 Cel		DUAL	1	R-PDSO-J28		3.6 V	3.66 mm		7.62 mm	Not Qualified	262144 bit	3 V			YES		18.44 mm
MT5LC2568DJ-35PXT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		32KX8	32K		-55 Cel		DUAL	1	R-PDSO-J28		3.6 V	3.66 mm		7.62 mm	Not Qualified	262144 bit	3 V			YES		18.44 mm
MT5C1604-30LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20						Not Qualified	16384 bit			e0				30 ns
MT5LC2564DJ-12LXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		64KX4	64K	2 V	-55 Cel		DUAL	1	R-PDSO-J24		3.6 V	3.61 mm		7.62 mm	Not Qualified	262144 bit	3 V			NO		15.9 mm
MT57W512H36BF-5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	445 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165		1.9 V	1.2 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			15 mm	.45 ns
MT58L256L32PF-5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		32	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		256KX32	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	8388608 bit	3.135 V		e1			15 mm	3.1 ns
MT5C2564C-45LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	262144 bit			e0		.0003 Amp		45 ns
MT5C6404C-35/883C	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified	65536 bit			e0		.005 Amp		35 ns
MT5C1608-12	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	175 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0		.003 Amp		12 ns
MT5C1608DJ-35LXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0	YES		15.9 mm	35 ns
MT55L128V32P1T-6IT	Micron Technology	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	128KX32	128K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.465 V	1.6 mm	166 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0		.01 Amp	20 mm	3.5 ns
MT5C1606DJ-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16384 bit			e0		.003 Amp		20 ns
MT45W2MV16PAFA-85WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			8 mm	85 ns
MT58LC32K32D7LG-5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	32KX32	32K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm
MT57W4MH9CF-4	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		4MX9	4M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			17 mm	.45 ns
MT5C1008XD-25IT	Micron Technology	STANDARD SRAM	INDUSTRIAL							CMOS			PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	5	5	8		DIE OR CHIP	SRAMs		85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel										Not Qualified	1048576 bit					.007 Amp		25 ns
MT5LC2568DJ-15XT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	55 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	3 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	262144 bit			e0		.0003 Amp		15 ns
MT59L64L36BT-7	Micron Technology	LATE-WRITE SRAM		100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm			64KX36	64K				QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V			YES		20 mm	4 ns
MT45W1MW16BDGB-708WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1		.00007 Amp	8 mm	70 ns
MT58C1616EJ-25	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	230 mA	16384 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm		19.1262 mm	Not Qualified	262144 bit	4.5 V	BYTE WRITE	e0	YES	.015 Amp	19.1262 mm	25 ns
MT5C6406DJ-35IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0		.003 Amp		35 ns
MT58L1MY32PF-5	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX32	1M	3.14 V	0 Cel		BOTTOM		R-PBGA-B165	1	3.465 V	1.2 mm		15 mm	Not Qualified	33554432 bit	3.135 V	PIPELINED ARCHITECTURE			.03 Amp	17 mm	3.1 ns
MT5C1009DJ-20XT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	1048576 bit			e0		.005 Amp		20 ns
MT5C1605DJ-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	85 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0	YES	.00025 Amp	15.9 mm	35 ns
MT5C1604C-25IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20						Not Qualified	16384 bit			e0				25 ns
MT5C6408C-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0		.00025 Amp		20 ns
MT8LS25632Z-25LP	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	520 mA	262144 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	2 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-T64		3.6 V	15.494 mm			Not Qualified	8388608 bit	3 V		e0	YES	.0004 Amp		25 ns
MT5LC256K16D4DJ-25LP	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J54						Not Qualified	4194304 bit			e0		.0007 Amp		25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.