Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C6401C-12LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX1	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	65536 bit			e0			.00025 Amp		12 ns
MT58LC32K36B2S22BWC2-11	Micron Technology	STANDARD SRAM	COMMERCIAL	105	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	UNCASED CHIP				70 Cel	3-STATE	32KX36	32K		0 Cel		UPPER	1	X-XUUC-N105	3.5 V				Not Qualified	1179648 bit	3.1 V				YES			11 ns
MT5C1607-35LXT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0		NO	.00025 Amp	31.495 mm	35 ns
MT85C8128-45	Micron Technology	SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0			.02 Amp		45 ns
MT58LC256K18C6LG-6.6TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX18	256K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER DOWN	e0		YES		20 mm	3.8 ns
MT5C1608-35XT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0			.003 Amp		35 ns
MT5C1606-8XT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0			.003 Amp		8 ns
MT5C1008-45FL	Micron Technology	STANDARD SRAM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	FLATPACK	FL32,.5	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F32					Not Qualified	1048576 bit			e0			.001 Amp		45 ns
MT57W512H36JF-7.5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	240 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	1.9 V	1.2 mm	133 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0				15 mm	.5 ns
MT58L256L32PF-5	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	525 mA	262144 words	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm		13 mm	Not Qualified	8388608 bit	3.135 V		e0			.01 Amp	15 mm	3.1 ns
MT55V512V32PT-6	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON	2.5	2.5	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	2.625 V	1.6 mm	166 MHz	14 mm	Not Qualified	16777216 bit	2.375 V	PIPELINED ARCHITECTURE	e0			.03 Amp	20 mm	3.5 ns
MT5C1009EC-25	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SON	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0			.007 Amp		25 ns
MT5C2564EC-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	262144 bit			e0			.0003 Amp		35 ns
MT58LC64K16C5LG-4.5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		16	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX16	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN	e0		YES		20 mm	4.5 ns
MT58LC64K36G1LG-7.5TR	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		64KX36	64K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0				20 mm
MT5C128K8A1DJ-25L	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0		YES		20.98 mm	25 ns
MT5C1601-30XT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	16384 bit			e0					30 ns
MT55L2MY18PF-6	Micron Technology	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3.465 V	1.2 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e1				17 mm	3.5 ns
MT58LC64K36D7LG-5PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX36	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0		YES		20 mm	5 ns
MT55L512L18FT-12	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.6 mm	83 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0			.01 Amp	20 mm	9 ns
MT5C1606-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0		NO	.00025 Amp	31.495 mm	15 ns
MT55L512V18PT-10IT	Micron Technology	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON	3.3	2.5,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel		QUAD		R-PQFP-G100	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					.01 Amp	20 mm	5 ns
MT5C1608DJ-15LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0		YES		15.9 mm	15 ns
MT8S6432M-25P	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	1000 mA	65536 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	4.5 V	0 Cel		SINGLE	1	R-XSMA-N64	5.5 V	15.113 mm			Not Qualified	2097152 bit	4.5 V				YES	.003 Amp		25 ns
MT5C6408CW-15L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0			.0005 Amp		15 ns
MT58LC32K32B2LG-9	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	270 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN	e0		YES	.005 Amp	20 mm	9 ns
MT5C1008C-45XT	Micron Technology	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T32					Not Qualified	1048576 bit			e0			.007 Amp		45 ns
MT5C1608-25L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0		YES	.0003 Amp	31.495 mm	25 ns
MT5LC1M4D4TG-12PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		1MX4	1M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3		YES		20.96 mm	12 ns
MT58L128L32DT-6IT	Micron Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V						20 mm	3.5 ns
MT58LC256K16D8LG-8.5TR	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		16	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V		e0		YES		20 mm	5 ns
MT58L256V36PB-6.6	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.13 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0			.01 Amp	22 mm	3.8 ns
MT5LC2564DJ-20	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	262144 bit			e0			.003 Amp		20 ns
MT58LC64K32D7LG-5LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V		e0		YES		20 mm
MT58LC32K32C4LG-4.5LP	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	425 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	32KX32	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			125 MHz		Not Qualified	1048576 bit			e0					4.5 ns
MT58LC32K32G1LG-10TR	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	32KX32	32K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V		e0		YES		20 mm
MT45W2MW16BABB-608WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e1	260			8 mm	60 ns
MT58L128L36F1F-7.5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm		13 mm	Not Qualified	4718592 bit	3.135 V		e1				15 mm	7.5 ns
MT58L128L36P1B-4	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1				22 mm	2.3 ns
MT8S6432Z-15L	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1360 mA	65536 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-T64	5.5 V	12.954 mm			Not Qualified	2097152 bit	4.5 V		e0		YES	.0024 Amp		15 ns
MT55V2MV18FF-11	Micron Technology	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		2.5		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2.625 V	1.2 mm		15 mm	Not Qualified	37748736 bit	2.375 V	FLOW-THROUGH ARCHITECTURE	e1				17 mm	8.5 ns
MT45W2MW16PAFA-85LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	17 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	85 ns
MT5C1601C-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	16384 bit			e0					15 ns
MT5C1008SJ-45IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0			.005 Amp		45 ns
TTS92256T-45C-12	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit						.0003 Amp		45 ns
MT5C1M4B2TG-20P	Micron Technology	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	175 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		YES	.002 Amp	20.95 mm	20 ns
MT58L128L32DB-6	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	475 mA	524288 words	COMMON	3.3	3.3	8	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm	166 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0			.01 Amp	22 mm	3.5 ns
MT58LC128K36C4LG-6L	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	2 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm	83 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0		YES		20 mm	6 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.