Micron Technology SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C2564-10LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	85 Cel		64KX4	64K	2 V	-40 Cel		DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V			NO		31.495 mm	10 ns
MT58L64L32PF-10	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	225 mA	65536 words	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm	100 MHz	13 mm	Not Qualified	2097152 bit	3.135 V		e0		.01 Amp	15 mm	5 ns
MT58LC32K36D7S25ADC2-5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	UNCASED CHIP				70 Cel	3-STATE	32KX36	32K		0 Cel		UPPER	1	X-XUUC-N100	3.63 V				Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN		YES			5 ns
MT8LS25632M-17LP	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	680 mA	262144 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	2 V	0 Cel		SINGLE	1	R-XSMA-N64	3.6 V	15.113 mm			Not Qualified	8388608 bit	3 V			YES	.0004 Amp		17 ns
MT58L512V18FT-10	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	2.5,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm	66 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0		.01 Amp	20 mm	10 ns
MT58L128L32P1-10T	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			100 MHz		Not Qualified	4194304 bit			e0		.01 Amp		5 ns
MT5C2568DJ-55L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0		.0005 Amp		55 ns
MT5LC2565DJ-12	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28	3.3 V				Not Qualified	262144 bit	3 V		e0		.003 Amp		12 ns
MT58L128L36DT-6	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	475 mA	524288 words	COMMON	3.3	3.3	9	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX9	512K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.6 mm	155 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0		.01 Amp	20 mm	3.5 ns
MT5LC2568DJ-25P	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.66 mm		7.62 mm	Not Qualified	262144 bit	3 V		e0	YES	.00075 Amp	18.44 mm	25 ns
MT58L128V36P1B-6IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1			22 mm	3.5 ns
MT58LC32K32D7LG-8	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	275 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	50 MHz	14 mm	Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES	.005 Amp	20 mm	8 ns
MT5C1601C-12LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	16384 bit			e0				12 ns
MT58LC64K18D7EJ-6L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	325 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.6 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		19.1262 mm	6 ns
MT5C2565-45LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28	5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0	YES	.0003 Amp	36.83 mm	45 ns
MT58LC128K18B3LG-12TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX18	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm
MT58LC32K36E1LG-8.5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	32KX36	32K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		20 mm	8.5 ns
MT58LC32K32B2LG-11LP	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	32KX32	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100					Not Qualified	1048576 bit			e0				11 ns
MT45W4ML16BFB-701WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0		.00012 Amp	8 mm	70 ns
MT58LC32K36D7LG-6L	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	350 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX36	32K	2 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	83 MHz	14 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		20 mm	6 ns
MT58L128L32DT-7.5IT	Micron Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V					20 mm	4 ns
MT5LC128K8D4DJ-20LXT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K	2 V	-55 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.68 mm		10.16 mm	Not Qualified	1048576 bit	3 V			YES		20.98 mm
MT5LC256K4D4TG-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		256KX4	256K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	YES		20.95 mm
MT5C2565-35IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX4	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0		.007 Amp		35 ns
MT5C1601DJ-20LXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO	.0003 Amp	15.9 mm	20 ns
MT55L256L32PT-11	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX32	256K		0 Cel		QUAD		R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	8388608 bit	3.135 V					20 mm	8.5 ns
MT5C1604-25XT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	16384 bit			e0				25 ns
MT5LC2568DJ-15LPITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.63 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	3 V		e0	YES		18.44 mm	15 ns
MT58LC32K32D9LG-6.6	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX8	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm	150 MHz	14 mm	Not Qualified	1048576 bit	3.135 V		e0		.01 Amp	20 mm	3.8 ns
MT5LC2565-35IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX4	64K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0		.0003 Amp		35 ns
MT5C1001SJ-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	NO	.001 Amp	18.44 mm	35 ns
MT5C1605DJ-12XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16384 bit			e0		.005 Amp		12 ns
MT45W2ML16BAFB-701IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			8 mm	70 ns
MT55L128L32FT-10TR	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX32	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	4194304 bit	3.135 V		e0	YES		20 mm	7.5 ns
MT45W2ML16BFB-606LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			8 mm	60 ns
MT4S6416D-20	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	310 mA	65536 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V				Not Qualified	1048576 bit	4.5 V		e0	YES	.04 Amp		20 ns
MT5C1606DJ-25LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4KX4	4K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO		15.9 mm	25 ns
MT5C6408W-35	Micron Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0		.005 Amp		35 ns
MT5C4008DJ-35L	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	4194304 bit			e0				35 ns
MT5C1008EC55/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0		.01 Amp		55 ns
MT5C6405EC-12IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0		.005 Amp		12 ns
MT56C16K16B2EJ-12TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		16KX16	16K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	262144 bit	4.5 V	BYTE READ/WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		19.1262 mm	12 ns
MT58L256V32DB-10	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	32	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	8388608 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0		.01 Amp	22 mm	5 ns
MT5C2564DJ-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	135 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.0005 Amp	15.9 mm	35 ns
MT5C6405EC-25	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0		.005 Amp		25 ns
MT58L128L18DT-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	131072 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX18	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	2359296 bit	3.135 V		e0		.01 Amp	20 mm	4 ns
MT5LC2564SG-25LPXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	3.63 V	2.72 mm		7.5 mm	Not Qualified	262144 bit	3 V		e0	NO		15.4 mm	25 ns
MT5C6408DJ-8LXT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.00025 Amp	18.44 mm	8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.