Micron Technology SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT58L128L32FB-8.5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	GRID ARRAY				1.27 mm	85 Cel		128KX32	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4194304 bit	3.135 V		e1			22 mm	8.5 ns
MT5C6405-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3		SRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.00025 Amp	31.495 mm	35 ns
MT58L128V36P1B-7.5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1			22 mm	4 ns
MT58LC128K32E1LG-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	65536 words	COMMON	3.3	2.5,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	113 MHz	14 mm	Not Qualified	2097152 bit	3.135 V		e0	YES	.01 Amp	20 mm	7.5 ns
MT58L512V18PF-5	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	525 mA	524288 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V		e0		.01 Amp	15 mm	3.1 ns
MT5LC2565-20LPXT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	65536 words	COMMON	3.3	3.3	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3.63 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V		e0	YES	.00005 Amp	36.83 mm	20 ns
MT3LST3264PG-66	Micron Technology	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	585 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160		SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.6 V		66 MHz		Not Qualified	2097152 bit	3.135 V	32K X 8 TAG		YES	.013 Amp		7 ns
MT5C6408DJ-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES	.0003 Amp	18.44 mm	12 ns
MT5C1009-70DJXT	Micron Technology
MT5LC256K16D4DJ-15	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ54,.44,32		SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J54					Not Qualified	4194304 bit			e0		.001 Amp		15 ns
MT5C6407-15AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0		.003 Amp		15 ns
MT5C1008CW-35XT	Micron Technology	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T32					Not Qualified	1048576 bit			e0		.007 Amp		35 ns
MT5C6401DJ-10LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	195 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.68 mm		7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	NO	.0003 Amp	15.9 mm	10 ns
TTS92256GK-25C-4	Micron Technology	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55		SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit					.0005 Amp		25 ns
MT5C2565C-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	262144 bit			e0		.008 Amp		30 ns
MT5C1606C-12AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3		SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit			e0		.003 Amp		12 ns
MT5C1608-25LXT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	YES	.0003 Amp	31.495 mm	25 ns
MT5LC1M4D4TG-25PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel		1MX4	1M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	YES		20.96 mm	25 ns
MT8S1632Z-25	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1120 mA	16384 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	16KX32	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64					Not Qualified	524288 bit			e0		.024 Amp		25 ns
MT5C1605EC-20LXT	Micron Technology	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC22,.3X.5		SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N22					Not Qualified	16384 bit			e0		.00025 Amp		20 ns
MT5C2565DJ-20PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	YES		18.44 mm	20 ns
MT2S3216D-35	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP40,.6	16	SRAMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T40	5.5 V				Not Qualified	524288 bit	4.5 V		e0	YES	.035 Amp		35 ns
MT58LC64K16F1LG-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	65536 words	COMMON	3.3	2.5,3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	64KX16	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm	143 MHz	14 mm	Not Qualified	1048576 bit	3.135 V		e0		.005 Amp	20 mm	4.5 ns
MT5C512K8B2TG-12LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	YES		23.52 mm	12 ns
MT58LC256K18F1LG-8.5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		256KX18	256K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0			20 mm	5 ns
MT58LC128K32C5LG-11	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	90 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0	YES	.005 Amp	20 mm	6 ns
MT5C2561DJ-10LXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE				1.27 mm	125 Cel		256KX1	256K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO		15.9 mm	10 ns
MT58LC128K36D8LG-6TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm	6 ns
MT58LC64K18A6EJ-8LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	210 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52					Not Qualified	1179648 bit			e0				8 ns
MT58L64V36PT-6	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	340 mA	65536 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	64KX36	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	2359296 bit	3.135 V		e0		.01 Amp	20 mm	3.5 ns
MT5C1606DJ-8LXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		4	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO		15.9 mm	8 ns
MT45W4ML16PFA-60LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		4MX16	4M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48	1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e0			8 mm	60 ns
MT57V256H36PF-6	Micron Technology	DDR SRAM		165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm		3-STATE	256KX36	256K	2.4 V		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	2.6 V	1.2 mm	167 MHz	13 mm	Not Qualified	9437184 bit	2.4 V	PIPELINED ARCHITECTURE	e0		.075 Amp	15 mm	3 ns
MT5C6408EC-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55		SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0		.00025 Amp		12 ns
MT5C1001DJ-15IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.44		SRAMs	1.27 mm	85 Cel	3-STATE	1MX1	1M	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	1048576 bit			e0		.005 Amp		15 ns
MT5C1005C30L883C	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	COMMON	5	5	4	IN-LINE	DIP28,.4		SRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	1048576 bit			e0				30 ns
MT58LC64K36B3S27BWC2-11	Micron Technology	STANDARD SRAM	COMMERCIAL	97	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	UNCASED CHIP					70 Cel	3-STATE	64KX36	64K		0 Cel		UPPER	1	X-XUUC-N97	3.6 V				Not Qualified	2359296 bit	3.135 V			YES
MT5C2568DJ-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES	.0003 Amp	18.44 mm	20 ns
MT5C1008DJ-17LXT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.00015 Amp	20.98 mm	17 ns
MT5C2568ECW30LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32					Not Qualified	262144 bit			e0		.0003 Amp		30 ns
MT55L128L36P1B-6IT	Micron Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.465 V	2.4 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0		.01 Amp	22 mm	3.5 ns
MT5C1008-45AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4		SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0		.007 Amp		45 ns
MT59L128H36PB-7	Micron Technology	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	390 mA	131072 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm		3-STATE	128KX36	128K	3.1 V		TIN LEAD	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	BYTE WRITE	e0		.025 Amp	22 mm	3.5 ns
MT5C6401C-12L883C	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3		SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	65536 bit			e0		.0003 Amp		12 ns
MT4LSY6472T2G-9P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1000 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160		SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	4718592 bit	3.135 V			YES	.008 Amp		9 ns
MT58L256L18PT-5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	525 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0		.01 Amp	20 mm	3.1 ns
MT45W2MW16BFB-858LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0		.00009 Amp	8 mm	85 ns
MT45W2MW16BFB-858LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0		.00009 Amp	8 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.