Micron Technology SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT56C0816LG-25TR	Micron Technology	CACHE SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		16	FLATPACK			.65 mm	70 Cel	3-STATE	8KX16	8K		0 Cel	TIN LEAD	QUAD	1	S-PQFP-G52		5.25 V	2.44 mm		10 mm	Not Qualified	131072 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES		10 mm	25 ns
MT58LC32K32C4S25ADC2-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N100		3.465 V				Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN		YES
MT58LC128K36G1LG-5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER DOWN	e0	YES		20 mm	3.5 ns
MT58L256L36FT-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	375 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm	113 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0		.01 Amp	20 mm	7.5 ns
MT5C1604-35	Micron Technology	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20		5.5 V				Not Qualified	16384 bit	4.5 V		e0				35 ns
MT5LC1008-25LP	Micron Technology	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	3.3	3.3	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		3.6 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0	YES	.00026 Amp	40.135 mm	25 ns
MT5LC1M4D4TG-25LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		1MX4	1M	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0	YES		20.96 mm	25 ns
MT5C256K16B2DJ-15LXT	Micron Technology	STANDARD SRAM	MILITARY	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-55 Cel		DUAL	1	R-PDSO-J54		5.5 V	3.81 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V			YES		22.25 mm	15 ns
MT5C2565DJ-10PITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	64KX4	64K		-40 Cel		DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V			YES		18.44 mm	10 ns
MT58LC64K32D8LG-15	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	66 MHz	14 mm	Not Qualified	2097152 bit	3.135 V	BURST CONTROL; SELF TIMED WRITE CYCLE; REGISTER ADDRESS; BYTE WRITE CONTROL; AUTOMATIC POWER DOWN	e0		.01 Amp	20 mm	7 ns
MT58L256L18FT-10IT	Micron Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX18	256K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V					20 mm	10 ns
MT5C6405-35LXT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24		5.5 V	4.32 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.00025 Amp	31.495 mm	35 ns
MT5LC1M4D4DJ-25L	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V		e0	YES	.0007 Amp	20.98 mm	25 ns
MT5C1M4B2DJ-20LXT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel		1MX4	1M	2 V	-55 Cel		DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V			YES		20.98 mm	20 ns
MT5C6405-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	65536 bit			e0		.00025 Amp		30 ns
MT58LC256K18D9LG-6.6	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER DOWN	e0	YES	.01 Amp	20 mm	3.8 ns
MT45W4MW16BFB-858IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0		.00012 Amp	8 mm	85 ns
MT2LSYT3264T4G-6L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	630 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160		3.465 V				Not Qualified	2097152 bit	3.135 V			YES			6 ns
MT58C1618EJ-25TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		16384 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	16KX18	16K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm		19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE	e0	YES		19.1262 mm
MT58L64V32PF-10IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		65536 words		3.3		32	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64KX32	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	2097152 bit	3.135 V		e1			15 mm	5 ns
MT2LSYT3272T1G-10P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160		3.465 V				Not Qualified	2359296 bit	3.135 V			YES	.004 Amp		10 ns
MT5C2561DJ-25XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	135 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	256KX1	256K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	262144 bit			e0		.007 Amp		25 ns
MT58L64L18PT-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.01 Amp	20 mm	4.2 ns
MT58LC64K18C4LG-4.5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm
MT58L512V32FF-10IT	Micron Technology
MT5C1005DJ-45LXTTR	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	256KX4	256K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0	YES		18.44 mm	45 ns
MT5C6408EC-30883C	Micron Technology	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28						Not Qualified	65536 bit			e0		.01 Amp		30 ns
MT5C2561DJ-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	135 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	256KX1	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.68 mm		7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.0005 Amp	15.9 mm	25 ns
MT5C6404DJ-8LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	65536 bit	4.5 V		e0	NO		15.9 mm	8 ns
MT45W1MV16PABA-60LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V		e1			8 mm	60 ns
MT58L256V18P1T-4.4IT	Micron Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX18	256K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V					20 mm	2.6 ns
MT58LC64K18C4LG-7LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST	e0	YES		20 mm	7 ns
MT58LC32K36C5LG-4.5TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	32KX36	32K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES		20 mm	4.5 ns
MT5C6406-30IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0		.005 Amp		30 ns
MT58L2MY18FT-7.5IT	Micron Technology
MT5LC2564SG-15LP	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		3.63 V	2.72 mm		7.5 mm	Not Qualified	262144 bit	3 V		e0	NO	.00005 Amp	15.4 mm	15 ns
MT58LC256K18E1LG-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	131072 words	COMMON	3.3	2.5,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX18	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	113 MHz	14 mm	Not Qualified	2359296 bit	3.135 V		e0	YES	.01 Amp	20 mm	7.5 ns
MT58LC128K36E1BG-7.5	Micron Technology	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	280 mA	65536 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	64KX36	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm	113 MHz	14 mm	Not Qualified	2359296 bit	3.135 V		e0	YES	.01 Amp	22 mm	7.5 ns
MT59L256H18PB-5	Micron Technology	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm		3-STATE	256KX18	256K	3.1 V		TIN LEAD	BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	BYTE WRITE	e0		.025 Amp	22 mm	2.5 ns
MT58V1MV32PT-6	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	375 mA	1048576 words	COMMON	2.5	2.5	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	2.38 V	0 Cel		QUAD		R-PQFP-G100	1	2.625 V	1.6 mm		14 mm	Not Qualified	33554432 bit	2.375 V	PIPELINED ARCHITECTURE			.03 Amp	20 mm	3.5 ns
MT58LC64K32B2LG-9	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				66 MHz		Not Qualified	2097152 bit			e0		.005 Amp		9 ns
MT5C1604C-35XT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20						Not Qualified	16384 bit			e0				35 ns
MT5LC2561-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	262144 bit			e0		.0003 Amp		25 ns
MT5C512K8A1DJ-25LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V		e0	YES		20.98 mm	25 ns
MT58LC128K36D7LG-6L	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	375 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	2 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	83 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0	YES		20 mm	6 ns
MT5C2516LG-20TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK			1 mm	70 Cel	3-STATE	16KX16	16K		0 Cel	TIN LEAD	QUAD	1	S-PQFP-G52		5.5 V	2.45 mm		14 mm	Not Qualified	262144 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		14 mm	20 ns
MT5C1608C-35L883C	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	16384 bit			e0		.001 Amp		35 ns
MT5C1008W-45LXT	Micron Technology	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32		5.5 V	5.59 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.0002 Amp	41.91 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.