Micron Technology SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5LC2564-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	65536 words	COMMON	3.3	3.3	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	262144 bit			e0		.0003 Amp		25 ns
MT5LC256K16D4TG-35PXT	Micron Technology	STANDARD SRAM	MILITARY	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-55 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	YES		22.25 mm	35 ns
MT45W2MW16BAFB-606LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			8 mm	60 ns
MT5C1009DJ-35LXT	Micron Technology	STANDARD SRAM	MILITARY	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	YES	.0002 Amp	20.98 mm	35 ns
MT5C2561C-25XT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	262144 bit			e0		.008 Amp		25 ns
MT5C1008SJ-12LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-J32	5.5 V	3.68 mm		7.67 mm	Not Qualified	1048576 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS				20.98 mm	12 ns
MT58L256V32FT-10.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.6 mm	94 MHz	14 mm	Not Qualified	8388608 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e0		.01 Amp	20 mm	9 ns
MT55L256L18F1B-12	Micron Technology	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119	3.465 V	2.4 mm	83 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0		.01 Amp	22 mm	9 ns
MT56C3818LG-20	Micron Technology	CACHE SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	18	FLATPACK	QFP52,.52SQ	SRAMs	.65 mm	70 Cel	3-STATE	8KX18	8K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQFP-G52	5.25 V	2.44 mm		10 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES	.02 Amp	10 mm	20 ns
MT5C1605-8LXT	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0	YES	.00025 Amp	26.165 mm	8 ns
MT58L256L32PB-6IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		32	GRID ARRAY			1.27 mm	85 Cel		256KX32	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	8388608 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE	e1			22 mm	3.5 ns
MT58LC256K18E1S27BDC2-11	Micron Technology	STANDARD SRAM	COMMERCIAL	79	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	UNCASED CHIP				70 Cel	3-STATE	256KX18	256K		0 Cel		UPPER	1	X-XUUC-N79	3.6 V				Not Qualified	4718592 bit	3.135 V			YES			11 ns
MT5LC1M4D4DJ-12LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V		e0	YES		20.98 mm	12 ns
MT58LC256K16B3S27BDC2-10	Micron Technology	STANDARD SRAM	COMMERCIAL	77	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K		0 Cel		UPPER	1	R-XUUC-N77	3.6 V				Not Qualified	4194304 bit	3.135 V			YES			10 ns
MT5C2564C-45L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	262144 bit			e0		.0003 Amp		45 ns
MT5LC512K8C3DJ-20LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	2 V	0 Cel		DUAL	1	R-PDSO-J32	3.63 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V			YES		20.98 mm	20 ns
MT5C6407C-35XT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0		.005 Amp		35 ns
MT5C256K16B2DJ-20P	Micron Technology	STANDARD SRAM	COMMERCIAL	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ54,.44,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	5.5 V	3.81 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0	YES	.002 Amp	22.25 mm	20 ns
MT5C256K16B2DJ-25LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J54	5.5 V	3.81 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V		e0	YES		22.25 mm	25 ns
MT5C6408DJ-10LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES		18.44 mm	10 ns
MT5C2565DJ-45XT	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0		.007 Amp		45 ns
MT5C512K8B2DJ-12LXT	Micron Technology	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K	2 V	-55 Cel		DUAL	1	R-PDSO-J36	5.5 V	3.76 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V			YES		23.52 mm	12 ns
MT58L128L36PB-7.5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1			22 mm	4 ns
MT5C1001SJ-20LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	NO	.001 Amp	18.44 mm	20 ns
MT59L128V36PB-5	Micron Technology	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.1 V	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V		e0	YES	.025 Amp	22 mm	2.5 ns
MT45W4MW16PFA-70IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e0		.00012 Amp	8 mm	70 ns
MT54V2MH18AF-6	Micron Technology	QDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		2.5		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2.6 V	1.2 mm		15 mm	Not Qualified	37748736 bit	2.4 V	PIPELINED ARCHITECTURE	e1			17 mm	2.5 ns
MT5C256K4A1DJ-15	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.005 Amp	20.98 mm	15 ns
MT45W4ML16BFB-701IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0		.00012 Amp	8 mm	70 ns
MT45W2MV16BFB-858WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0		.00011 Amp	8 mm	85 ns
MT5C1008EC-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32					Not Qualified	1048576 bit			e0		.007 Amp		35 ns
MT5C1005-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.32 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.001 Amp	35.05 mm	25 ns
MT58LC256K16B3S27BWC2-9	Micron Technology	STANDARD SRAM	COMMERCIAL	77	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K		0 Cel		UPPER	1	R-XUUC-N77	3.6 V				Not Qualified	4194304 bit	3.135 V			YES			9 ns
MT4LSYT6472B2G-11L	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	64KX72	64K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE		YES			11 ns
MT58LC64K18M1EJ-9LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52					Not Qualified	1179648 bit			e0				9 ns
MT5C1605C-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0		.00025 Amp		15 ns
MT5C1601DJ-15AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	16384 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16384 bit			e0		.005 Amp		15 ns
MT5C6404DJ-25	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	65536 bit			e0		.005 Amp		25 ns
MT58LC32K32D7LG-6P	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	375 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	83 MHz	14 mm	Not Qualified	1048576 bit	3.135 V		e0	YES	.002 Amp	20 mm	6 ns
MT58LC64K18D7LG-8L	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	235 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST	e0	YES		20 mm	8 ns
MT55V1MV32FT-11	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		2.5		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		1MX32	1M		0 Cel		QUAD		R-PQFP-G100	2.625 V	1.6 mm		14 mm	Not Qualified	33554432 bit	2.375 V	FLOW-THROUGH ARCHITECTURE				20 mm	8.5 ns
MT5C2568C-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	262144 bit			e0		.008 Amp		25 ns
MT4S12832M-25LP	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	560 mA	131072 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	2 V	0 Cel		SINGLE	1	R-XSMA-N64	5.5 V	15.113 mm			Not Qualified	4194304 bit	4.5 V			YES	.0006 Amp		25 ns
MT5C1607DJ-12LXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO		15.9 mm	12 ns
MT5LC2568DJ-35LXTTR	Micron Technology	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	3 V		e0	YES		18.44 mm	35 ns
MT58LC64K16B3LG-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX16	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN	e0	YES	.005 Amp	20 mm	8.5 ns
MT58LC64K32D7LG-7LP	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	325 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			66 MHz		Not Qualified	2097152 bit			e0				7 ns
MT5C6404C-45L883C	Micron Technology	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	65536 bit			e0		.0003 Amp		45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.