Micron Technology SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5LC1M4C3DJ-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.63 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	3 V		e0			YES		20.98 mm	35 ns
MT5C6408C12L883C	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0				.0003 Amp		12 ns
MT58L256V36PS-5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX36	256K		-40 Cel		QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	AUTOMATIC POWER DOWN; SELF-TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE						20 mm	3.1 ns
MT5C6405DJ-10	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	65536 bit			e0				.003 Amp		10 ns
MT58L512L18FT-8.5IT	Micron Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX18	512K		-40 Cel		QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V							20 mm	8.5 ns
MT5LC2568-15LPIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3.63 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V		e0			YES	.00005 Amp	36.83 mm	15 ns
MT5C2889DJ-17LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	32KX9	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32	5.5 V	3.66 mm		7.67 mm	Not Qualified	294912 bit	4.5 V		e0			YES	.0004 Amp	20.98 mm	17 ns
MT58LC64K18B2S22BWC2-11	Micron Technology	STANDARD SRAM	COMMERCIAL	105	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	UNCASED CHIP				70 Cel	3-STATE	64KX18	64K		0 Cel		UPPER	1	X-XUUC-N105	3.5 V				Not Qualified	1179648 bit	3.1 V					YES			11 ns
MT5C1M4A1DJ55AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	4194304 bit			e0						55 ns
MT5C6404EC-20LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N22					Not Qualified	65536 bit			e0				.00025 Amp		20 ns
MT45W2ML16PBA-85LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)	BOTTOM		R-PBGA-B48	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e8	30	260		.00009 Amp	8 mm	85 ns
MT5C1608-8L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.00025 Amp	31.495 mm	8 ns
MT55L128L36P1F-10	Micron Technology	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.01 Amp	15 mm	5 ns
MT58LC128K36D7LG-7	Micron Technology	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	325 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			66 MHz		Not Qualified	4718592 bit			e0				.005 Amp		7 ns
MT5C2568W-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28	5.5 V	4.57 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.0003 Amp	36.83 mm	15 ns
MT58LC32K32B2S25ADC2-14	Micron Technology	STANDARD SRAM	COMMERCIAL	100	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	UNCASED CHIP				70 Cel	3-STATE	32KX32	32K		0 Cel		UPPER	1	X-XUUC-N100	3.465 V				Not Qualified	1048576 bit	3.135 V	AUTOMATIC POWER-DOWN				YES
MT5C2568-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	155 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28	5.5 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0			YES	.0005 Amp	36.83 mm	25 ns
MT58LC256K18B3LG-11TR	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX18	256K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0			YES		20 mm	11 ns
MT55L64L32FT-10	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V		e0			YES	.01 Amp	20 mm	7.5 ns
MT5LC2568Z-25IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28					Not Qualified	262144 bit			e0				.0003 Amp		25 ns
MT55L256V18F1F-11IT	Micron Technology	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	275 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3.465 V	1.2 mm	90 MHz	13 mm	Not Qualified	4718592 bit	3.135 V		e0				.01 Amp	15 mm	8.5 ns
MT5C1005SJ-15	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	1048576 bit			e0				.005 Amp		15 ns
MT5C1001C-25L883C	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	1048576 bit			e0				.001 Amp		25 ns
MT5C2565EC-30	Micron Technology	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	262144 bit			e0				.005 Amp		30 ns
MT5C1607DJ-8LXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	16384 bit	4.5 V		e0			NO	.00025 Amp	15.9 mm	8 ns
MT5C2568DJ-25PITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	32KX8	32K		-40 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.66 mm		7.67 mm	Not Qualified	262144 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS				YES		18.44 mm	25 ns
MT58LC128K36D8LG-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0			YES	.005 Amp	20 mm	4.5 ns
MT58LC256K18D9LG-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	325 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	AUTOMATIC POWER DOWN	e0			YES	.01 Amp	20 mm	4.2 ns
MT59L256L18BT-12TR	Micron Technology	LATE-WRITE SRAM		100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm			256KX18	256K				QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V					YES		20 mm	6 ns
MT5C1005DJ-35L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00015 Amp	18.44 mm	35 ns
MT5C1606EC-12LXT	Micron Technology	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	16384 bit			e0				.00025 Amp		12 ns
MT55L512Y36PB-7.5	Micron Technology	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	675 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3.465 V	2.4 mm	133 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e0				.01 Amp	22 mm	4.2 ns
MT5C1605DJ-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16384 bit			e0				.003 Amp		30 ns
MT5LC512K8D4DJ-15LXT	Micron Technology	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K	2 V	-55 Cel		DUAL	1	R-PDSO-J36	3.6 V	3.76 mm		10.21 mm	Not Qualified	4194304 bit	3 V					YES		23.52 mm	15 ns
MT45W2ML16BFB-701LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54	1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0				.00009 Amp	8 mm	70 ns
MT58LC64K18A6EJ-5	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	335 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52					Not Qualified	1179648 bit			e0				.005 Amp		5 ns
MT5LC2561DJ-15LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		1	SMALL OUTLINE			1.27 mm	85 Cel		256KX1	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	3.6 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	3 V		e0			NO		15.9 mm	15 ns
MT5C1601EC-30883C	Micron Technology	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20					Not Qualified	16384 bit			e0						30 ns
MT5C1009C-45	Micron Technology	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T32					Not Qualified	1048576 bit			e0				.007 Amp		45 ns
MT55L128L18PT-8.5	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX18	128K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V		e0			YES	.01 Amp	20 mm	4.5 ns
MT58V1MV32FT-8.5	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		2.5		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		1MX32	1M		0 Cel		QUAD		R-PQFP-G100	2.625 V	1.6 mm		14 mm	Not Qualified	33554432 bit	2.375 V	FLOW-THROUGH ARCHITECTURE						20 mm	8.5 ns
MT58L128V36P1F-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	375 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3.6 V	1.2 mm	133 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.01 Amp	15 mm	4 ns
MT5LC2565-12LXT	Micron Technology	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	IN-LINE			2.54 mm	125 Cel		64KX4	64K	2 V	-55 Cel		DUAL	1	R-PDIP-T28	3.6 V	4.32 mm		7.62 mm	Not Qualified	262144 bit	3 V					YES		36.83 mm	12 ns
MT58LC64K18D7LG-8	Micron Technology	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	235 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	AUTOMATIC POWER-DOWN	e0			YES	.005 Amp	20 mm	8 ns
MT5C2561DJ-10LP	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		256KX1	256K	2 V	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.61 mm		7.67 mm	Not Qualified	262144 bit	4.5 V					NO		15.9 mm	10 ns
MT58L64V36PT-7.5T	Micron Technology	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		64KX36	64K		-40 Cel		QUAD		R-PQFP-G100	3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V							20 mm	4 ns
MT55L128L36PT-7.5	Micron Technology	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0			YES	.01 Amp	20 mm	4.2 ns
MT5C1008DJ-20LP	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0			YES	.00015 Amp	20.98 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.