NXP Semiconductors SRAM 805

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MCM63R836FC3.3R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.65 ns
MCM69F618CTQ7.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		64KX18	64K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V		e0			20 mm	7.5 ns
MCM63Z818TQ143R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	4 ns
MCM69F737TQ8.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		20 mm	8.5 ns
MCM69R738CZP4.4R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.2 ns
MCM63F737KZP9R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				22 mm	9 ns
MCM6706RJ6R2	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	205 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel		DUAL		R-PDSO-J32						Not Qualified	262144 bit							6 ns
MCM67B618AFN9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm		19.125 mm		1179648 bit	4.75 V					19.125 mm	9 ns
MCM69C433TQ15R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		64	FLATPACK, LOW PROFILE			.65 mm	70 Cel		16KX64	16K		0 Cel		QUAD		R-PQFP-G100		3.5 V	1.6 mm		14 mm		1048576 bit	3.1 V					20 mm	8 ns
HEF4720VPB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		12.5 V	4.7 mm		7.62 mm	Not Qualified	256 bit	4.5 V			NO		21.6 mm	580 ns
MCM63Z737TQ15R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				20 mm	15 ns
HEF4720BT-T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		15 V	1.75 mm		3.9 mm	Not Qualified	256 bit	3 V			NO		9.9 mm	580 ns
MCM69F618CTQ10	NXP Semiconductors	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	110 Cel	3-STATE	64KX18	64K		20 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		20 mm	10 ns
MCM69F819TQ8.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH				20 mm	8.5 ns
MCM63P837TQ225R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					20 mm	2.6 ns
MCM63Z818TQ143	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	4 ns
MCM69D536TQ6	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176		3.465 V	1.6 mm	83 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.1 Amp	24 mm	6 ns
MCM64Z836TQ8.5	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	250 mA	262144 words	COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	2.3 V	0 Cel		QUAD		R-PQFP-G100	1	2.7 V	1.6 mm		14 mm	Not Qualified	9437184 bit	2.3 V				.01 Amp	20 mm	8.5 ns
MCM69P737TQ3.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	425 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE			.045 Amp	20 mm	3.5 ns
MCM63P919TQ166R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					20 mm	3.5 ns
MCM69P819ZP4R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel	3-STATE	256KX18	256K		0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	LINEAR/INTERLEAVED BURST SEQUENCE; INTERNALLY SELF-TIMED WRITE CYCLE; BYTE/GLOBAL WRITE CONTROL	e0	YES		22 mm	4 ns
MCM69R820CZP4	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2 ns
MCM69D618TQ6R	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		64KX18	64K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm		1179648 bit	3.135 V					20 mm	6 ns
MCM69P737ZP3.2R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE			.045 Amp	22 mm	3.2 ns
MCM63R818FC3.7R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		4718592 bit	2.375 V					22 mm	1.85 ns
MCM63F737KTQ11	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				20 mm	11 ns
MCM64E918FC3.3R	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm
MCM64Z918ZP7	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	300 mA	524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		BOTTOM		R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V				.01 Amp	22 mm	7 ns
MCM64Z916TQ11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		QUAD		R-PQFP-G100	1	2.7 V	1.6 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE			.01 Amp	20 mm	11 ns
MCM6343TS10B	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3.15 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3.15 V	CONFIGURED AS 256K X 16; TTL COMPATIBLE INPUTS & OUTPUTS	e0			18.41 mm	10 ns
MCM69P737TQ3.2R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE			.045 Amp	20 mm	3.2 ns
MPC2605ZP83	NXP Semiconductors	CACHE TAG SRAM	COMMERCIAL	241	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		72	GRID ARRAY			1.27 mm	70 Cel		32KX72	32K		0 Cel		BOTTOM		S-PBGA-B241		3.465 V	2.05 mm		25 mm		2359296 bit	3.135 V	8KX18TAG ARRAY AVAILABLE				25 mm	8 ns
MCM69F737TQ7.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3		36	FLATPACK, LOW PROFILE	QFP100,.63X.87		1.27 mm	70 Cel	3-STATE	128KX36	128K	3.135 V	0 Cel		QUAD		R-PQFP-G100		3.6 V	2.4 mm	117 MHz	14 mm		4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE		YES	.05 Amp	20 mm	7.5 ns
MCM63R818FC4R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		4718592 bit	2.375 V					22 mm	2 ns
MCM63P818TQ100	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	5 ns
MCM63Z834TQ10	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				20 mm	10 ns
MCM69D536TQ5R	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176		3.465 V	1.6 mm	100 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.1 Amp	24 mm	5 ns
MCM69F819TQ7.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH				20 mm	7.5 ns
MCM6946YJ10	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J36		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3.135 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0	YES		23.5 mm	10 ns
MCM69F819ZP8	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH				22 mm	8 ns
MCM69P737TQ3.2	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE			.045 Amp	20 mm	3.2 ns
MCM63R836FC4.0R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON			36	GRID ARRAY	BGA119,7X17,50		1.27 mm	70 Cel	3-STATE	256KX36	256K	2.375 V	0 Cel		BOTTOM	1	R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V			YES	.175 Amp	22 mm	4 ns
MCM63D736ATQ100	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel		QUAD		S-PQFP-G176		3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V					24 mm	5 ns
MCM64Z836ZP7	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	270 mA	262144 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.3 V	0 Cel		BOTTOM		R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V				.01 Amp	22 mm	7 ns
MCM63P736ZP66	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	7 ns
MCM63P819KTQ150	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	3.8 ns
MCM6946YJ12R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J36		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3.135 V		e0	YES		23.5 mm	12 ns
MCM63F819KTQ11R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				20 mm	11 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.