NXP Semiconductors SRAM 805

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MCM69P819TQ4	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	256KX18	256K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	LINEAR/INTERLEAVED BURST SEQUENCE; INTERNALLY SELF-TIMED WRITE CYCLE; BYTE/GLOBAL WRITE CONTROL	e0	YES		20 mm	4 ns
MCM63P737KTQ166	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	3.5 ns
MCM63P919ZP166	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					22 mm	3.5 ns
MCM69R738CZP5R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.5 ns
MCM63Z918ZP8	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				22 mm	8 ns
MCM69F737ZP8	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		22 mm	8 ns
MCM63Z819TQ15R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				20 mm	15 ns
MCM63P631ATQ75R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel		QUAD		R-PQFP-G100				75 MHz		Not Qualified	2097152 bit					.002 Amp		7 ns
MCM63L836AFC4.2R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	3 V					22 mm	4.2 ns
MCM63D736ATQ133	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel		QUAD		S-PQFP-G176		3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V					24 mm	4 ns
MCM63F733ATQ10R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX32	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				20 mm	10 ns
MCM63Z834TQ11	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				20 mm	11 ns
MCM63F919TQ7	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHTECTURE				20 mm	7 ns
MCM63P919TQ225R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					20 mm	2.6 ns
MCM63P819KTQ133R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	4 ns
MCM63R836FC3.7R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.85 ns
MCM69F819TQ7.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH				20 mm	7.5 ns
MCM67M618AFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0	YES		19.1262 mm	10 ns
MCM63P818ZP100R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	5 ns
MCM63F737TQ9	NXP Semiconductors	CACHE SRAM		100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	3.3		36	FLATPACK, LOW PROFILE	QFP100,.63X.87		.65 mm	70 Cel		128KX36	128K	3.125 V	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	75 MHz	14 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE		YES	.005 Amp	20 mm	9 ns
MCM69P618CTQ6R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		64KX18	64K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		1179648 bit	3.135 V					20 mm	6 ns
MPC2605ZP83R	NXP Semiconductors	CACHE TAG SRAM	COMMERCIAL	241	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		72	GRID ARRAY			1.27 mm	70 Cel		32KX72	32K		0 Cel		BOTTOM		S-PBGA-B241		3.465 V	2.05 mm		25 mm		2359296 bit	3.135 V	8KX18TAG ARRAY AVAILABLE				25 mm	8 ns
MCM63Z836ZP7R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.65 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				20 mm	7 ns
MCM69P536CTQ4	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		1179648 bit	3.135 V					20 mm	4 ns
MCM63P631ATQ100R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	275 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel		QUAD		R-PQFP-G100				100 MHz		Not Qualified	2097152 bit					.002 Amp		4.5 ns
MCM69L818CZP7.5	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V					22 mm	7.5 ns
MCM63R918AFC3.3R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm	1.65 ns
MCM63F737KZP8.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				22 mm	8.5 ns
MCM69R737AZP5	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		4718592 bit	3.15 V					22 mm	2.5 ns
HEF4720VDF	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		12.5 V	5.08 mm		7.62 mm	Not Qualified	256 bit	4.5 V			NO			580 ns
MCM69R819AZP7	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		4718592 bit	3.15 V					22 mm	3.5 ns
MCM69L818CZP5.5R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V					22 mm	5.5 ns
HEF4720BT	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5	3/15	1	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		15 V	1.75 mm		3.9 mm	Not Qualified	256 bit	3 V			NO		9.9 mm	580 ns
MCM63L836AFC3.8R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	3 V					22 mm	3.8 ns
MCM63P736ZP66R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	7 ns
HEF4720BTD-T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		15 V	1.75 mm		3.9 mm	Not Qualified	256 bit	3 V			NO		9.9 mm	580 ns
MCM63F819KZP11	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				22 mm	11 ns
MCM63L918AFC4.5	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.77 mm		14 mm		9437184 bit	3 V					22 mm	4.5 ns
MCM63Z818TQ100	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	5 ns
MCM6343YJ12	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		DUAL		R-PDSO-J44		3.63 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V				.008 Amp	28.575 mm	12 ns
MCM63Z836ZP8R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.65 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				20 mm	8 ns
MCM63F737ZP8.5R	NXP Semiconductors	CACHE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	395 mA	131072 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50		1.27 mm	70 Cel		128KX36	128K	3.125 V	0 Cel		BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm	90 MHz	14 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE		YES	.005 Amp	22 mm	8.5 ns
MCM63Z834TQ11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				20 mm	11 ns
MCM64E836FC3.3	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V					22 mm
MCM6929AWJ12	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.75 mm		10.16 mm	Not Qualified	1048576 bit	3.135 V					20.955 mm	12 ns
MCM64Z916ZP11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		BOTTOM		R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE			.01 Amp	22 mm	11 ns
MCM72F10DG9	NXP Semiconductors	SRAM MODULE		168	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	3580 mA	1048576 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	SRAMs	1.27 mm		3-STATE	1MX72	1M	3.14 V			DUAL		R-PDMA-N168				90 MHz		Not Qualified	75497472 bit							9 ns
MCM69R820CZP6	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	3 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.