Renesas Electronics SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

7006S20FGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

QFF

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

370 mA

16384 words

5

8

FLATPACK

1.27 mm

85 Cel

16KX8

16K

-40 Cel

QUAD

S-PQFP-F68

5.5 V

24.0792 mm

131072 bit

4.5 V

24.0792 mm

20 ns

R1WV6416RBG-5SR

Renesas Electronics

STANDARD SRAM

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

60 mA

4194304 words

COMMON

3

3/3.3

16

GRID ARRAY

BGA48,6X8,30

8

SRAMs

.75 mm

70 Cel

3-STATE

4MX16

4M

2.7 V

0 Cel

BOTTOM

R-PBGA-B48

1

3.6 V

Not Qualified

67108864 bit

2.7 V

.000024 Amp

55 ns

R1QGA3636CBB-25RS

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

1MX36

1M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.55 ns

HM6789HAJP-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

16KX4

16K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

15.63 mm

15 ns

HM679SHJP-12

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

DUAL

R-PDSO-J28

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

18.17 mm

12 ns

R1QEA3636CBB-20IT

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX36

1M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QAA7236ABG-20IS

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX36

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QAA3618CBB-19IA

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX18

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QGA7218ABG-25RB

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.55 ns

R1QBA3618CBG-22RS

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

37748736 bit

1.7 V

17 mm

.45 ns

R1Q6A7218ABB-33RS0

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1Q4A4436RBG-33RA

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX36

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

17 mm

.45 ns

70T3589S133BFI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

208

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

450 mA

65536 words

COMMON

2.5

2.5,2.5/3.3

36

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA208,17X17,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX36

64K

2.4 V

-40 Cel

Tin/Lead (Sn63Pb37)

BOTTOM

2

S-PBGA-B208

3

2.6 V

1.2 mm

133 MHz

15 mm

Not Qualified

2359296 bit

2.4 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e0

20

225

.02 Amp

15 mm

15 ns

R1QMA7236ABB-25RT0

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.55 ns

5962-8687508YX

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

1024 words

5

8

CHIP CARRIER

1.016 mm

125 Cel

1KX8

1K

-55 Cel

QUAD

S-XQCC-N48

5.5 V

3.18 mm

14.3002 mm

Not Qualified

8192 bit

4.5 V

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

14.3002 mm

45 ns

R1QFA7236ABB-20RB0

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

MC-421000C8A-80

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

30

512

PLASTIC/EPOXY

NO

CMOS

560 mA

1048576 words

COMMON

5

5

8

SIP30,.2

SRAMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

Tin/Lead (Sn/Pb)

SINGLE

Not Qualified

8388608 bit

e0

.008 Amp

80 ns

R1Q2A3618ABG-60R

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

550 mA

2097152 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX18

2M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

167 MHz

Not Qualified

37748736 bit

.33 Amp

.5 ns

7006S20JG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

290 mA

16384 words

COMMON

5

5

8

CHIP CARRIER

LDCC68,1.0SQ

SRAMs

1.27 mm

70 Cel

3-STATE

16KX8

16K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQCC-J68

1

5.5 V

4.572 mm

24.2062 mm

Not Qualified

131072 bit

4.5 V

e3

30

260

.015 Amp

24.2062 mm

20 ns

7006S70FGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

J BEND

PARALLEL

ASYNCHRONOUS

300 mA

16384 words

COMMON

5

5

8

CHIP CARRIER

QFL68,.95SQ

SRAMs

1.27 mm

125 Cel

3-STATE

16KX8

16K

4.5 V

-55 Cel

MATTE TIN

QUAD

2

S-PQCC-J68

5.5 V

24.2062 mm

Not Qualified

131072 bit

4.5 V

e3

.03 Amp

24.2062 mm

70 ns

7024L35GGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535 Class B

PIN/PEG

PARALLEL

ASYNCHRONOUS

4096 words

5

16

GRID ARRAY

2.54 mm

125 Cel

4KX16

4K

-55 Cel

MATTE TIN

PERPENDICULAR

S-CPGA-P84

5.5 V

5.207 mm

27.94 mm

Not Qualified

65536 bit

4.5 V

e3

27.94 mm

35 ns

R1QCA7218ABB-22RT

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

7007L55GGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

270 mA

32768 words

COMMON

5

5

8

GRID ARRAY

PGA68,11X11

SRAMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

262144 bit

4.5 V

e3

.01 Amp

55 ns

R1QPA4436RBG-33IA

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX36

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

17 mm

71L016L70PH

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

45 mA

65536 words

COMMON

3

3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

64KX16

64K

1.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

2.7 V

e0

30

240

.000005 Amp

18.41 mm

70 ns

70V05S35JGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

CHIP CARRIER

1.27 mm

85 Cel

8KX8

8K

-40 Cel

MATTE TIN

QUAD

S-PQCC-J68

3.6 V

4.572 mm

24.2062 mm

Not Qualified

65536 bit

3 V

e3

24.2062 mm

35 ns

7025S55JG

Renesas Electronics

MULTI-PORT SRAM

HM66AQB18202BP-40

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

1.9 V

1.46 mm

15 mm

Not Qualified

37748736 bit

1.7 V

e0

17 mm

.45 ns

R1Q2A3618BBG-40RB

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

650 mA

2097152 words

SEPARATE

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX18

2M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.46 mm

250 MHz

15 mm

Not Qualified

37748736 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.35 Amp

17 mm

.45 ns

HM658128ADR-12

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO REFRESH

18.4 mm

120 ns

5962-8687515YA

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

185 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1.016 mm

125 Cel

3-STATE

1KX8

1K

2 V

-55 Cel

TIN LEAD

QUAD

2

S-CQCC-N48

1

5.5 V

3.048 mm

14.3002 mm

Qualified

8192 bit

4.5 V

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

e0

240

YES

.004 Amp

14.3002 mm

55 ns

7024L70JB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

84

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

J BEND

PARALLEL

ASYNCHRONOUS

250 mA

4096 words

COMMON

5

5

16

CHIP CARRIER

LDCC84,1.2SQ

SRAMs

1.27 mm

125 Cel

3-STATE

4KX16

4K

2 V

-55 Cel

Tin/Lead (Sn85Pb15)

QUAD

2

S-PQCC-J84

1

5.5 V

29.3116 mm

Not Qualified

65536 bit

4.5 V

e0

30

225

.004 Amp

29.3116 mm

70 ns

R1QDA7218ABB-19RA

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

HM658512DFP-10

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

Not Qualified

4194304 bit

4.5 V

CE/AUTO REFRESH

20.45 mm

100 ns

R1Q6A7218ABB-40RT0

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

70V06L25GG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

16384 words

3.3

8

GRID ARRAY

2.54 mm

70 Cel

16KX8

16K

0 Cel

PERPENDICULAR

S-CPGA-P68

3.6 V

5.207 mm

29.464 mm

131072 bit

3 V

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

29.464 mm

25 ns

7006S25GGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535

PIN/PEG

PARALLEL

ASYNCHRONOUS

330 mA

16384 words

5

8

GRID ARRAY

2.54 mm

125 Cel

16KX8

16K

-55 Cel

MATTE TIN

PERPENDICULAR

S-CPGA-P68

5.5 V

2.413 mm

27.889 mm

Not Qualified

131072 bit

4.5 V

e3

27.889 mm

25 ns

R1QMA3618CBB-25RS

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.55 ns

R1QFA7218ABG-22IT

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

HM658128ALR-8L

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

CE/AUTO/SELF REFRESH

18.4 mm

80 ns

R1Q6A7218ABB-40IT0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

70V06L15PFG8

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

185 mA

16384 words

COMMON

3.3

3.3

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

70 Cel

3-STATE

16KX8

16K

2 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

3.6 V

1.6 mm

14 mm

Not Qualified

131072 bit

3 V

e3

30

260

.0025 Amp

14 mm

15 ns

R1QFA3636CBB-20RB

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

1MX36

1M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

5962-8687507UX

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-STD-883

FLAT

PARALLEL

ASYNCHRONOUS

1024 words

5

8

FLATPACK

1.27 mm

125 Cel

1KX8

1K

-55 Cel

TIN LEAD

QUAD

S-XQFP-F48

5.5 V

2.74 mm

19.05 mm

Qualified

8192 bit

4.5 V

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

e0

19.05 mm

55 ns

7143SA90PFGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

310 mA

2048 words

5

16

FLATPACK

.5 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

90 ns

70T631S10BFI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

208

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

445 mA

262144 words

COMMON

2.5

2.5,2.5/3.3

18

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA208,17X17,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX18

256K

2.4 V

-40 Cel

Tin/Lead (Sn63Pb37)

BOTTOM

2

S-PBGA-B208

3

2.6 V

1.5 mm

15 mm

Not Qualified

4718592 bit

2.4 V

e0

20

225

.02 Amp

15 mm

10 ns

7024L17PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

260 mA

4096 words

COMMON

5

5

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

4KX16

4K

2 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

65536 bit

4.5 V

e3

30

260

.0015 Amp

14 mm

17 ns

7143LA35GGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535

PIN/PEG

PARALLEL

ASYNCHRONOUS

295 mA

2048 words

5

16

GRID ARRAY

125 Cel

2KX16

2K

-55 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

32768 bit

4.5 V

35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.