Renesas Electronics SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

7143SA90FGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

QFF

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

FLAT

PARALLEL

ASYNCHRONOUS

310 mA

2048 words

5

16

FLATPACK

1.27 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-F68

5.5 V

24.0792 mm

32768 bit

4.5 V

24.0792 mm

90 ns

R1QFA7236ABB-22RB0

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QFA7218ABG-20IT0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QFA7236ABB-22RB

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

70T659S12BCI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

256

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

395 mA

131072 words

COMMON

2.5

2.5,2.5/3.3

36

GRID ARRAY, LOW PROFILE

BGA256,16X16,40

SRAMs

1 mm

85 Cel

3-STATE

128KX36

128K

2.4 V

-40 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B256

3

2.6 V

1.5 mm

17 mm

Not Qualified

4718592 bit

2.4 V

e0

20

225

.02 Amp

17 mm

12 ns

R1QNA4418RBG-33IB

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

8MX18

8M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

17 mm

70T633S10BCG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

256

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

405 mA

524288 words

COMMON

2.5

2.5,2.5/3.3

18

GRID ARRAY, LOW PROFILE

BGA256,16X16,40

SRAMs

1 mm

70 Cel

3-STATE

512KX18

512K

2.4 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-PBGA-B256

3

2.6 V

1.7 mm

17 mm

Not Qualified

9437184 bit

2.4 V

e1

30

260

.01 Amp

17 mm

10 ns

7006S70PFGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

64

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

300 mA

16384 words

COMMON

5

5

8

FLATPACK

QFP64,.6SQ,32

SRAMs

.8 mm

125 Cel

3-STATE

16KX8

16K

4.5 V

-55 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

Not Qualified

131072 bit

4.5 V

e3

30

260

.03 Amp

70 ns

R1QCA3618CBG-20IB

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

790 mA

2097152 words

COMMON

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX18

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

500 MHz

15 mm

Not Qualified

37748736 bit

1.7 V

.66 Amp

17 mm

.45 ns

R1QCA3618CBG-22IA

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

750 mA

2097152 words

COMMON

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX18

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

450 MHz

15 mm

Not Qualified

37748736 bit

1.7 V

.63 Amp

17 mm

.45 ns

7014S25PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

5

9

FLATPACK, LOW PROFILE

.8 mm

85 Cel

4KX9

4K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

36864 bit

4.5 V

e3

14 mm

25 ns

7024S35PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

5

16

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

4KX16

4K

0 Cel

QUAD

S-PQFP-G100

5.5 V

1.6 mm

14 mm

65536 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

14 mm

35 ns

R1QAA3636CBB-20IA

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX36

1M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QAA3636CBG-22IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1130 mA

1048576 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

1MX36

1M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

450 MHz

Not Qualified

37748736 bit

.81 Amp

.45 ns

HM65W8512LRR-12V

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

32

TSOP2-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

20.95 mm

120 ns

70V06S20JG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

3.3

8

CHIP CARRIER

1.27 mm

70 Cel

16KX8

16K

0 Cel

MATTE TIN

QUAD

S-PQCC-J68

3.6 V

4.57 mm

24.2062 mm

Not Qualified

131072 bit

3 V

e3

24.2062 mm

20 ns

70V7319S166BF8

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

208

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

790 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA208,17X17,50

SRAMs

.8 mm

70 Cel

3-STATE

256KX18

256K

3.15 V

0 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B208

3

3.45 V

1.2 mm

166 MHz

15 mm

Not Qualified

4718592 bit

3.15 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e0

20

225

.03 Amp

15 mm

12 ns

R1Q2A7236ABB-40IB

Renesas Electronics

QDR II SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX36

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

HM6AEB18204BPL50

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

1.9 V

1.46 mm

15 mm

Not Qualified

37748736 bit

1.7 V

e0

17 mm

.45 ns

5962-8687506UX

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-STD-883

FLAT

PARALLEL

ASYNCHRONOUS

1024 words

5

8

FLATPACK

1.27 mm

125 Cel

1KX8

1K

-55 Cel

TIN LEAD

QUAD

S-XQFP-F48

5.5 V

2.74 mm

19.05 mm

Not Qualified

8192 bit

4.5 V

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

e0

19.05 mm

70 ns

7143LA70GGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535

PIN/PEG

PARALLEL

ASYNCHRONOUS

280 mA

2048 words

5

16

GRID ARRAY

2.54 mm

125 Cel

2KX16

2K

-55 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

29.464 mm

32768 bit

4.5 V

29.464 mm

70 ns

5962-8687503YA

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

230 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1.016 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

TIN LEAD

QUAD

2

S-CQCC-N48

1

5.5 V

3.048 mm

14.3002 mm

Qualified

8192 bit

4.5 V

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

e0

240

YES

.03 Amp

14.3002 mm

55 ns

70V3379S5PRFG8

Renesas Electronics

APPLICATION SPECIFIC SRAM

COMMERCIAL

128

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

360 mA

32768 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK

QFP128,.63X.87,20

SRAMs

.5 mm

70 Cel

3-STATE

32KX18

32K

3.15 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

R-PQFP-G128

3

3.45 V

100 MHz

Not Qualified

589824 bit

3.15 V

e3

30

260

.015 Amp

5 ns

71P73204S333BQ8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

COMMON

1.5/1.8,1.8

8

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX8

2M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

333 MHz

Not Qualified

16777216 bit

e0

.45 ns

R1QHA3618CBG-25IT

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX18

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

37748736 bit

1.7 V

17 mm

.55 ns

R1QJA7218ABG-25RA

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.55 ns

7026L35GGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

16384 words

5

16

GRID ARRAY

85 Cel

16KX16

16K

-40 Cel

PERPENDICULAR

S-CPGA-P84

5.5 V

262144 bit

4.5 V

35 ns

R1QGA7218ABB-25IA0

Renesas Electronics

QDR II PLUS SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

SEPARATE

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

BOTTOM

1

R-PBGA-B165

1.9 V

1.4 mm

400 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

NO

15 mm

.55 ns

R1QBA3636CBB-19IB

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX36

1M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1Q3A7218ABG-33IT

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QFA7218ABG-22IB

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1Q3A7218ABB-40RT

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QCA7218ABG-19RB

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1Q3A7236ABG-33RB

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1Q6A3609ABG-60R

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

500 mA

4194304 words

SEPARATE

1.5/1.8,1.8

9

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

4MX9

4M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

167 MHz

Not Qualified

37748736 bit

.26 Amp

.45 ns

R1QEA7218ABB-22IS

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1Q5A3618ABG-50R

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

600 mA

2097152 words

COMMON

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX18

2M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

200 MHz

Not Qualified

37748736 bit

.28 Amp

.45 ns

R1QEA3618CBB-20RA

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QJA7236ABB-25RT0

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.55 ns

71501S45SO

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

125 mA

65536 words

SEPARATE

5

5

1

SMALL OUTLINE

SOP24,.4

SRAMs

1.27 mm

70 Cel

3-STATE

64KX1

64K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

1

Not Qualified

65536 bit

e0

30

225

.125 Amp

45 ns

R1QDA7218ABB-20IT

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QHA3636CBB-25IA

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX36

1M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.55 ns

R1Q6A7236ABB-33IA0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX36

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

7026S20GGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535

PIN/PEG

PARALLEL

ASYNCHRONOUS

16384 words

5

16

GRID ARRAY

125 Cel

16KX16

16K

-55 Cel

PERPENDICULAR

S-CPGA-P84

5.5 V

262144 bit

4.5 V

20 ns

R1QCA7218ABG-20RB0

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

7024L15JG8

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

84

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

260 mA

4096 words

COMMON

5

5

16

CHIP CARRIER

LDCC84,1.2SQ

SRAMs

1.27 mm

70 Cel

3-STATE

4KX16

4K

2 V

0 Cel

Matte Tin (Sn)

QUAD

2

S-PQCC-J84

3

5.5 V

4.57 mm

29.3116 mm

Not Qualified

65536 bit

4.5 V

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

e3

NOT SPECIFIED

260

.0015 Amp

29.3116 mm

15 ns

R1QKA3636CBG-25RA

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

1MX36

1M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

37748736 bit

1.7 V

17 mm

.55 ns

7026S20JG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

84

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

5

16

CHIP CARRIER

70 Cel

16KX16

16K

0 Cel

QUAD

S-PQCC-J84

5.5 V

262144 bit

4.5 V

20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.