Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
310 mA |
2048 words |
5 |
16 |
FLATPACK |
1.27 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQFP-F68 |
5.5 V |
24.0792 mm |
32768 bit |
4.5 V |
24.0792 mm |
90 ns |
||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
2MX36 |
2M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
75497472 bit |
1.7 V |
15 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
4MX18 |
4M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
75497472 bit |
1.7 V |
17 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
2MX36 |
2M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
75497472 bit |
1.7 V |
15 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
256 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
395 mA |
131072 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA256,16X16,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
2.4 V |
-40 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
2.6 V |
1.5 mm |
17 mm |
Not Qualified |
4718592 bit |
2.4 V |
e0 |
20 |
225 |
.02 Amp |
17 mm |
12 ns |
||||||||||||
Renesas Electronics |
QDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8388608 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
8MX18 |
8M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
150994944 bit |
1.7 V |
17 mm |
||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
256 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
405 mA |
524288 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
18 |
GRID ARRAY, LOW PROFILE |
BGA256,16X16,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
2.4 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
2.6 V |
1.7 mm |
17 mm |
Not Qualified |
9437184 bit |
2.4 V |
e1 |
30 |
260 |
.01 Amp |
17 mm |
10 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.6SQ,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
131072 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
70 ns |
|||||||||||||
Renesas Electronics |
QDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
790 mA |
2097152 words |
COMMON |
1.8 |
1.5/1.8,1.8 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
2MX18 |
2M |
1.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
500 MHz |
15 mm |
Not Qualified |
37748736 bit |
1.7 V |
.66 Amp |
17 mm |
.45 ns |
|||||||||||||||||
Renesas Electronics |
QDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
750 mA |
2097152 words |
COMMON |
1.8 |
1.5/1.8,1.8 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
2MX18 |
2M |
1.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
450 MHz |
15 mm |
Not Qualified |
37748736 bit |
1.7 V |
.63 Amp |
17 mm |
.45 ns |
|||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
14 mm |
25 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
4KX16 |
4K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
1.6 mm |
14 mm |
65536 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
14 mm |
35 ns |
||||||||||||||||||||||||
Renesas Electronics |
QDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1048576 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
1MX36 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
37748736 bit |
1.7 V |
15 mm |
.45 ns |
|||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
165 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1130 mA |
1048576 words |
SEPARATE |
1.5/1.8,1.8 |
36 |
GRID ARRAY |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
1.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
3 |
450 MHz |
Not Qualified |
37748736 bit |
.81 Amp |
.45 ns |
||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
20.95 mm |
120 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
3.6 V |
4.57 mm |
24.2062 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
24.2062 mm |
20 ns |
|||||||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
208 |
TFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
790 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA208,17X17,50 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.2 mm |
166 MHz |
15 mm |
Not Qualified |
4718592 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.03 Amp |
15 mm |
12 ns |
||||||||||
|
Renesas Electronics |
QDR II SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
2MX36 |
2M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
75497472 bit |
1.7 V |
15 mm |
.45 ns |
||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
2MX18 |
2M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.46 mm |
15 mm |
Not Qualified |
37748736 bit |
1.7 V |
e0 |
17 mm |
.45 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
19.05 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
19.05 mm |
70 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
280 mA |
2048 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
2KX16 |
2K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P68 |
5.5 V |
29.464 mm |
32768 bit |
4.5 V |
29.464 mm |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
230 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.3002 mm |
Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
240 |
YES |
.03 Amp |
14.3002 mm |
55 ns |
||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
32768 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
32KX18 |
32K |
3.15 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
100 MHz |
Not Qualified |
589824 bit |
3.15 V |
e3 |
30 |
260 |
.015 Amp |
5 ns |
|||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
165 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
1.5/1.8,1.8 |
8 |
GRID ARRAY |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
1.7 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
333 MHz |
Not Qualified |
16777216 bit |
e0 |
.45 ns |
|||||||||||||||||||||||
Renesas Electronics |
QDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
2MX18 |
2M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
37748736 bit |
1.7 V |
17 mm |
.55 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
4MX18 |
4M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
75497472 bit |
1.7 V |
17 mm |
.55 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
GRID ARRAY |
85 Cel |
16KX16 |
16K |
-40 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
262144 bit |
4.5 V |
35 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
QDR II PLUS SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
1.7 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B165 |
1.9 V |
1.4 mm |
400 MHz |
13 mm |
Not Qualified |
75497472 bit |
1.7 V |
NO |
15 mm |
.55 ns |
|||||||||||||||||
Renesas Electronics |
DDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1048576 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
1MX36 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
37748736 bit |
1.7 V |
15 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
QDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
4MX18 |
4M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
75497472 bit |
1.7 V |
17 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
4MX18 |
4M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
75497472 bit |
1.7 V |
17 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
4MX18 |
4M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
75497472 bit |
1.7 V |
15 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
4MX18 |
4M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
75497472 bit |
1.7 V |
17 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
2MX36 |
2M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
75497472 bit |
1.7 V |
17 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
165 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
4194304 words |
SEPARATE |
1.5/1.8,1.8 |
9 |
GRID ARRAY |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4MX9 |
4M |
1.7 V |
0 Cel |
BOTTOM |
R-PBGA-B165 |
167 MHz |
Not Qualified |
37748736 bit |
.26 Amp |
.45 ns |
||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
4MX18 |
4M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
75497472 bit |
1.7 V |
15 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
165 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
600 mA |
2097152 words |
COMMON |
1.5/1.8,1.8 |
18 |
GRID ARRAY |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
2MX18 |
2M |
1.7 V |
0 Cel |
BOTTOM |
R-PBGA-B165 |
200 MHz |
Not Qualified |
37748736 bit |
.28 Amp |
.45 ns |
||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
2MX18 |
2M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
37748736 bit |
1.7 V |
15 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
2MX36 |
2M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
75497472 bit |
1.7 V |
15 mm |
.55 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
125 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
1 |
Not Qualified |
65536 bit |
e0 |
30 |
225 |
.125 Amp |
45 ns |
|||||||||||||||||||
Renesas Electronics |
QDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
4MX18 |
4M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
75497472 bit |
1.7 V |
15 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1048576 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
1MX36 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
37748736 bit |
1.7 V |
15 mm |
.55 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
2MX36 |
2M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
13 mm |
75497472 bit |
1.7 V |
15 mm |
.45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
GRID ARRAY |
125 Cel |
16KX16 |
16K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
262144 bit |
4.5 V |
20 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
DDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.8 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
4MX18 |
4M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
75497472 bit |
1.7 V |
17 mm |
.45 ns |
|||||||||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
16 |
CHIP CARRIER |
LDCC84,1.2SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
Matte Tin (Sn) |
QUAD |
2 |
S-PQCC-J84 |
3 |
5.5 V |
4.57 mm |
29.3116 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
NOT SPECIFIED |
260 |
.0015 Amp |
29.3116 mm |
15 ns |
||||||||||
Renesas Electronics |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1048576 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
1MX36 |
1M |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
15 mm |
37748736 bit |
1.7 V |
17 mm |
.55 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
CHIP CARRIER |
70 Cel |
16KX16 |
16K |
0 Cel |
QUAD |
S-PQCC-J84 |
5.5 V |
262144 bit |
4.5 V |
20 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.