Renesas Electronics SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
R1QAA3618CBG-20IB	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX18	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V						17 mm	.45 ns
R1QFA7218ABG-19RB	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V						17 mm	.45 ns
R1QCA7218ABG-22IA	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V						17 mm	.45 ns
R1QHA3636CBB-25IB	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V						15 mm	.55 ns
CDM6116BCJ/3	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC	YES		CMOS	MIL-STD-883 Class B (Modified)		NO LEAD	PARALLEL	ASYNCHRONOUS	65 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.45SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		S-XQCC-N28						Not Qualified	16384 bit			e0			.0001 Amp		100 ns
6116LA25SOG8	Renesas Electronics	STANDARD SRAM																														Matte Tin (Sn) - annealed				1									e3	40	260
R1QAA3636CBG-20RB	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V						17 mm	.45 ns
HM6147H-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18						Not Qualified	4096 bit			e0			.0008 Amp		35 ns
70V7319S166BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		256KX18	256K		-40 Cel		BOTTOM		S-PBGA-B256		3.45 V	1.5 mm		17 mm		4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE					17 mm	12 ns
7024L35GB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm		27.94 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	NOT SPECIFIED	240	.004 Amp	27.94 mm	35 ns
7025S35FG	Renesas Electronics	MULTI-PORT SRAM
R1RW0408DGE-2PI#B1	Renesas Electronics	STANDARD SRAM																																		3
R1QDA7218ABG-20RA	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V						17 mm	.45 ns
R1QCA7218ABG-19IA	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V						17 mm	.45 ns
R1QBA4436RBG-19RT	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX36	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V						17 mm	.45 ns
R1QBA4436RBG-20IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX36	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V						17 mm	.45 ns
R1Q5A3636BBG-40RB0	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V					.35 Amp	17 mm	.45 ns
R1QBA3636CBG-20IS	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V						17 mm	.45 ns
R1Q5A7236ABG-30RA0	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V						17 mm	.45 ns
R1Q5A7236ABG-33IA0	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V						17 mm	.45 ns
71P79804200BQGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			BALL	PARALLEL	SYNCHRONOUS	800 mA	1048576 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			200 MHz		Not Qualified	18874368 bit			e1	30	260	.37 Amp		.45 ns
HM216514TTI5SL	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	2 V	-40 Cel		DUAL		R-PDSO-G44	1					Not Qualified	8388608 bit						.00001 Amp		55 ns
5962-8866206XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		37.211 mm	25 ns
R1QAA3618CBG-19IB	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX18	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V						17 mm	.45 ns
R1QBA7218ABB-19IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V						15 mm	.45 ns
7052S35PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQFP-G120		5.5 V	1.6 mm		14 mm		16384 bit	4.5 V						14 mm	35 ns
R1QFA7218ABG-22RB0	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V						17 mm	.45 ns
70121L55JGI	Renesas Electronics	MULTI-PORT SRAM
70V06L35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3				24.2062 mm	35 ns
7027S25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	FLATPACK				85 Cel		32KX16	32K		-40 Cel		QUAD		S-PQFP-G100		5.5 V					524288 bit	4.5 V							25 ns
70V3389S4PRFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm	133 MHz	14 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e3	30	260	.015 Amp	20 mm	4.2 ns
R1QEA4418RBG-18IB0	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		8MX18	8M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		17 mm	.45 ns
70V06S35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3				24.2062 mm	35 ns
R1QBA4418RBG-19IB	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		8MX18	8M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V						17 mm	.45 ns
7007L55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q		J BEND	PARALLEL	ASYNCHRONOUS	270 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260	.01 Amp	24.2062 mm	55 ns
6116SA20TPB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V				Not Qualified	16384 bit	4.5 V		e0					19 ns
7054S20PRFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	128	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK			.5 mm	85 Cel		4KX8	4K		-40 Cel	TIN LEAD	QUAD		R-PQFP-F128	3	5.5 V	1.6 mm		14 mm		32768 bit	4.5 V		e0				20 mm	20 ns
R1Q6A7236ABB-30RA0	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V						15 mm	.45 ns
R1QBA7218ABB-20IB	Renesas Electronics	DDR II PLUS SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V						15 mm	.45 ns
R1QAA7236ABG-19RB	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V						17 mm	.45 ns
UPB10474D-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	SEPARATE		-5.2	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	75 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-CDIP-T24						Not Qualified	4096 bit			e0					15 ns
5962-8976403MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE			2.54 mm	125 Cel		4KX8	4K		-55 Cel		DUAL		R-CDIP-T48		5.5 V	4.826 mm		15.24 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		60.96 mm	55 ns
R1QFA3618CBG-20IT	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX18	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V						17 mm	.45 ns
R1QEA7236ABB-19RT	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V						15 mm	.45 ns
7024S20JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B		J BEND	PARALLEL	ASYNCHRONOUS	370 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm		29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260	.00003 Amp	29.3116 mm	20 ns
R1QHA3636CBB-25IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			BALL	PARALLEL	SYNCHRONOUS	910 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	37748736 bit						.79 Amp		.55 ns
70V3389S4BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260	.015 Amp		4 ns
7024L25GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class B		PIN/PEG	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm		27.94 mm	Not Qualified	65536 bit	4.5 V		e3			.004 Amp	27.94 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.