Renesas Electronics SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-3829416MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP		RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Qualified	65536 bit	4.5 V		e0					37.211 mm	19 ns
70V9359L7BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		8192 words		3.3		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		8KX18	8K		0 Cel	MATTE TIN	BOTTOM		S-PBGA-B100		3.6 V	1.4 mm		10 mm		147456 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					10 mm	7.5 ns
5962-8700220UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN		SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B		NO LEAD	PARALLEL	ASYNCHRONOUS	240 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm		14.3002 mm	Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	14.3002 mm	25 ns
5962-8687509UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF		SQUARE		UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm		19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	19.05 mm	90 ns
HM65256BLFP-20T	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	SOP		RECTANGULAR		PLASTIC/EPOXY	YES	1	MOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm		8.4 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =100NS						18.3 mm	200 ns
70121S35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ		SQUARE		PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	18432 bit	4.5 V		e3	30	260		.015 Amp		35 ns
7006S35PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LQFP		SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e0	30	240		.03 Amp	14 mm	35 ns
HS4-65T262RH-8	Renesas Electronics	STANDARD SRAM	MILITARY	32	QCCN		RECTANGULAR	200k Rad(Si)	CERAMIC	YES		CMOS	MIL-STD-883 Class B (Modified)		NO LEAD	PARALLEL	ASYNCHRONOUS	34.2 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	3 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32						Not Qualified	16384 bit			e0				.005 Amp		175 ns
R1QBA3618CBG-20RB	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V							17 mm	.45 ns
UPB100474AD-6	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP		RECTANGULAR		CERAMIC	NO				-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	4096 bit			e0						6 ns
R1QDA7236ABB-22IS	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
UPD2114LC-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	4096 bit			e0						200 ns
R1QMA7236ABB-25RA	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.55 ns
R1RW0416DSB-2PI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-G44	2	3.6 V				Not Qualified	4194304 bit	3 V						.005 Amp		12 ns
HM6AEB36104BP30	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		15 mm	Not Qualified	37748736 bit	1.7 V		e0					17 mm	.45 ns
R1QGA3618CBB-25IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS			BALL	PARALLEL	SYNCHRONOUS	980 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	37748736 bit							.72 Amp		.55 ns
70V3579S6BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	83 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE	e0	20	225			15 mm	6 ns
UPD2114LC-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	4096 bit			e0						300 ns
70V9179L12PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP		SQUARE		PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		9	FLATPACK				70 Cel		32KX9	32K		0 Cel		QUAD		S-PQFP-G100		3.6 V					294912 bit	3 V			NOT SPECIFIED	NOT SPECIFIED				12 ns
HM65256BFP-15	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	SOP		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm		8.4 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH						18.3 mm	150 ns
5962-9166202MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA		SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		PIN/PEG	PARALLEL	ASYNCHRONOUS	330 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm		27.94 mm	Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.004 Amp	27.94 mm	70 ns
R1QFA3636CBG-22IT	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V							17 mm	.45 ns
R1QCA3618CBB-20RT	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V							15 mm	.45 ns
7143SA55GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA		SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535		PIN/PEG	PARALLEL	ASYNCHRONOUS	315 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	3.683 mm		29.464 mm	Not Qualified	32768 bit	4.5 V		e0	NOT SPECIFIED	240		.015 Amp	29.464 mm	55 ns
5962-8976407MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN		SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		4KX8	4K		-55 Cel		QUAD		S-CQCC-N48		5.5 V	3.048 mm		14.3002 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			14.3002 mm	35 ns
7025S20FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF		SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q		FLAT	PARALLEL	ASYNCHRONOUS	370 mA	8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-F84		5.5 V			29.21 mm		131072 bit	4.5 V							29.21 mm	20 ns
R1QEA3618CBB-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS			BALL	PARALLEL	SYNCHRONOUS	990 mA	2097152 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				500 MHz		Not Qualified	37748736 bit							.84 Amp		.45 ns
R1Q2A7218ABB-40RA	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
R1QCA3618CBG-20RS	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	790 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	500 MHz	15 mm	Not Qualified	37748736 bit	1.7 V						.66 Amp	17 mm	.45 ns
7024S55FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QFP		SQUARE		PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3				.000015 Amp		55 ns
HM658512DFP-8	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	SOP		RECTANGULAR		PLASTIC/EPOXY	YES	1	MOS			GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm			Not Qualified	4194304 bit	4.5 V	CE/AUTO REFRESH						20.45 mm	80 ns
R1Q4A4436RBG-40IB0	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX36	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			17 mm	.45 ns
R1QFA3618CBB-19RT	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V							15 mm	.45 ns
R1Q3A3609BBG-33R	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	650 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.46 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V						.38 Amp	17 mm	.3 ns
7024L35FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP		SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3				.004 Amp		35 ns
5962-8866202XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP		RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm		15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.02 Amp	37.211 mm	70 ns
UPD98421F1-GA5-A	Renesas Electronics	CONTENT ADDRESSABLE SRAM	COMMERCIAL	240	LFBGA		SQUARE		PLASTIC/EPOXY	YES	1	MOS			BALL	PARALLEL	SYNCHRONOUS	1150 mA	8192 words		3.3	3.3	64	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA240,18X18,32	SRAMs	.8 mm	70 Cel		8KX64	8K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B240		3.45 V	1.38 mm		16 mm	Not Qualified	524288 bit	3.15 V		e1					16 mm	10 ns
R1QDA3636CBB-20IS	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V							15 mm	.45 ns
UPB10142D	Renesas Electronics	STANDARD SRAM	OTHER	16	DIP		RECTANGULAR		CERAMIC	NO		ECL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel		64X1	64		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16						Not Qualified				e0
70V9269L7PRFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	QFP		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		16	FLATPACK				70 Cel		16KX16	16K		0 Cel		QUAD		R-PQFP-G128		3.6 V					262144 bit	3 V								7.5 ns
HM65256BP-10T	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH						35.6 mm	100 ns
TTS92256N-25C-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit							.00012 Amp		25 ns
MC-421000C8A-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30		512			PLASTIC/EPOXY	NO		CMOS						480 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		0 Cel	Tin/Lead (Sn/Pb)	SINGLE								Not Qualified	8388608 bit			e0				.008 Amp		100 ns
70V3389S6BFI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA		SQUARE		PLASTIC/EPOXY	YES		CMOS			BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			83 MHz		Not Qualified	1179648 bit			e0	20	225		.03 Amp		6 ns
70V05S20GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA		SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			PIN/PEG	PARALLEL	ASYNCHRONOUS	200 mA	8192 words	COMMON	3.3	3.3	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		3.6 V	5.207 mm		29.464 mm	Not Qualified	65536 bit	3 V		e3				.005 Amp	29.464 mm	20 ns
R1QMA7236ABG-25RS	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V							17 mm	.55 ns
7024S35GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA		SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K	4.5 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm		27.94 mm	Not Qualified	65536 bit	4.5 V		e3				.000015 Amp	27.94 mm	35 ns
7007S25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ		SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q		J BEND	PARALLEL	ASYNCHRONOUS	345 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.