Renesas Electronics SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

R1QJA3618CBB-25RB

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.55 ns

HM6116AP-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

2.54 mm

70 Cel

2KX8

2K

0 Cel

DUAL

R-PDIP-T24

5.5 V

5.7 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

31.6 mm

150 ns

5962-8700206TA

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

UNSPECIFIED

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

160 mA

2048 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

5.5 V

2.7432 mm

19.05 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

.004 Amp

19.05 mm

90 ns

7052L35G

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

108

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

COMMON

5

5

8

GRID ARRAY

PGA108,12X12

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

TIN LEAD

PERPENDICULAR

4

S-CPGA-P108

1

5.5 V

5.207 mm

30.48 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN; BATTERY BACKUP

e0

240

.0006 Amp

30.48 mm

35 ns

R1QBA7218ABG-20RS

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1Q6A7218ABB-40RS

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

6116LA25TPG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

110 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

DUAL

R-PDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

.00002 Amp

25 ns

70V34S15PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

3.3

18

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

4KX18

4K

0 Cel

MATTE TIN

QUAD

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

73728 bit

3 V

e3

14 mm

15 ns

7025S25GGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535 Class Q

PIN/PEG

PARALLEL

ASYNCHRONOUS

330 mA

8192 words

5

16

GRID ARRAY

2.54 mm

125 Cel

8KX16

8K

-55 Cel

PERPENDICULAR

S-CPGA-P84

5.5 V

27.94 mm

131072 bit

4.5 V

27.94 mm

25 ns

7007L35GI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

295 mA

32768 words

COMMON

5

5

8

GRID ARRAY

PGA68,11X11

SRAMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

TIN LEAD

PERPENDICULAR

2

S-CPGA-P68

5.5 V

5.207 mm

29.464 mm

Not Qualified

262144 bit

4.5 V

e0

.01 Amp

29.464 mm

35 ns

7024L17JG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

84

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

260 mA

4096 words

COMMON

5

5

16

CHIP CARRIER

LDCC84,1.2SQ

SRAMs

2.54 mm

70 Cel

3-STATE

4KX16

4K

2 V

0 Cel

MATTE TIN

QUAD

2

S-PQCC-J84

3

5.5 V

4.572 mm

29.3116 mm

Not Qualified

65536 bit

4.5 V

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

e3

40

260

.0015 Amp

29.3116 mm

17 ns

7024S55GGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

325 mA

4096 words

5

16

GRID ARRAY

2.54 mm

85 Cel

4KX16

4K

-40 Cel

MATTE TIN

PERPENDICULAR

S-CPGA-P84

5.5 V

5.207 mm

27.94 mm

Not Qualified

65536 bit

4.5 V

e3

27.94 mm

55 ns

HM658512LFP-85V

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

Not Qualified

4194304 bit

4.5 V

CE/AUTO/SELF REFRESH

20.45 mm

85 ns

5962-01-287-8526

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-PDIP-T28

Not Qualified

262144 bit

.00005 Amp

100 ns

R1QEA4418RBG-19IS

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

8MX18

8M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

17 mm

.45 ns

70V7519S166BCG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

256

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

262144 words

3.3

36

GRID ARRAY

70 Cel

256KX36

256K

0 Cel

BOTTOM

S-PBGA-B256

3.45 V

9437184 bit

3.15 V

PIPELINED OR FLOW THROUGH ARCHITECTURE

3.6 ns

70T3539MS133BCG8

Renesas Electronics

APPLICATION SPECIFIC SRAM

COMMERCIAL

256

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

740 mA

524288 words

COMMON

2.5,2.5/3.3

36

GRID ARRAY

BGA256,16X16,40

SRAMs

1 mm

70 Cel

3-STATE

512KX36

512K

2.4 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-PBGA-B256

3

133 MHz

Not Qualified

18874368 bit

e1

30

260

.02 Amp

15 ns

HM6707P-25

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

BICMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

1

IN-LINE

2.54 mm

70 Cel

256KX1

256K

0 Cel

DUAL

R-PDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

29.88 mm

25 ns

R1QJA7218ABB-25RT

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.55 ns

70V7599S200DR

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

208

FQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, FINE PITCH

.5 mm

70 Cel

128KX36

128K

0 Cel

TIN LEAD

QUAD

S-PQFP-G208

3

3.45 V

4.1 mm

28 mm

Not Qualified

4718592 bit

3.15 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e0

28 mm

10 ns

7025S35JG8

Renesas Electronics

MULTI-PORT SRAM

7143SA70JG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

QCCN

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

5

16

CHIP CARRIER

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQCC-N68

5.5 V

32768 bit

4.5 V

70 ns

R1Q2A7218ABB-50IB

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QDA7218ABB-22RS

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QBA3636CBG-20RS

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

1MX36

1M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

37748736 bit

1.7 V

17 mm

.45 ns

5962-8687522YX

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

1024 words

5

8

CHIP CARRIER

1.016 mm

125 Cel

1KX8

1K

-55 Cel

TIN LEAD

QUAD

S-XQCC-N48

5.5 V

3.18 mm

14.3002 mm

Qualified

8192 bit

4.5 V

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

e0

14.3002 mm

35 ns

R1QDA3636CBG-20IA

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX36

1M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

37748736 bit

1.7 V

17 mm

.45 ns

70V7339S166BFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

208

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

790 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA208,17X17,32

SRAMs

.8 mm

70 Cel

3-STATE

512KX18

512K

3.15 V

0 Cel

TIN SILVER COPPER

BOTTOM

2

S-PBGA-B208

3

3.45 V

1.2 mm

166 MHz

15 mm

Not Qualified

9437184 bit

3.15 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e1

30

260

.03 Amp

15 mm

12 ns

HM6116AP-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

2.54 mm

70 Cel

2KX8

2K

0 Cel

DUAL

R-PDIP-T24

5.5 V

5.7 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

31.6 mm

200 ns

UPB100470D-15

Renesas Electronics

STANDARD SRAM

OTHER

18

DIP

RECTANGULAR

CERAMIC

NO

-4.5 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

220 mA

4096 words

SEPARATE

-4.5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

85 Cel

4KX1

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

4096 bit

e0

15 ns

R1QNA4436RBG-30IB0

Renesas Electronics

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX36

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

17 mm

.45 ns

HM3-6516B-9+

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

34 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

2 V

-40 Cel

DUAL

R-PDIP-T24

16384 bit

.000025 Amp

120 ns

7143LA20JG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

QCCN

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

280 mA

2048 words

COMMON

5

5

16

CHIP CARRIER

LDCC68,1.0SQ

SRAMs

1.27 mm

70 Cel

3-STATE

2KX16

2K

2 V

0 Cel

Matte Tin (Sn)

QUAD

2

S-PQCC-N68

3

5.5 V

Not Qualified

32768 bit

4.5 V

e3

NOT SPECIFIED

260

.0015 Amp

20 ns

R1QAA3618CBB-20RT

Renesas Electronics

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

70T3539MS133BCGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

256

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

900 mA

524288 words

COMMON

2.5

2.5,2.5/3.3

36

GRID ARRAY

BGA256,16X16,40

SRAMs

1 mm

85 Cel

3-STATE

512KX36

512K

2.4 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-PBGA-B256

3

2.6 V

133 MHz

Not Qualified

18874368 bit

2.4 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e1

30

260

.025 Amp

15 ns

UPB100480B-15

Renesas Electronics

STANDARD SRAM

OTHER

20

DFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

ECL

-4.5 V

FLAT

PARALLEL

ASYNCHRONOUS

240 mA

16384 words

SEPARATE

-4.5

1

FLATPACK

FL20,.3

SRAMs

1.27 mm

85 Cel

OPEN-EMITTER

16KX1

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-CDFP-F20

Not Qualified

16384 bit

e0

15 ns

5962-8866513ZA

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

PIN/PEG

PARALLEL

ASYNCHRONOUS

290 mA

2048 words

COMMON

5

5

16

GRID ARRAY

PGA68,11X11

SRAMs

2.54 mm

125 Cel

3-STATE

2KX16

2K

2 V

-55 Cel

TIN LEAD

PERPENDICULAR

2

S-CPGA-P68

1

5.5 V

5.207 mm

29.464 mm

Not Qualified

32768 bit

4.5 V

ARBITER

e0

240

YES

.004 Amp

29.464 mm

45 ns

70V3389S4BC8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

256

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

460 mA

65536 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, LOW PROFILE

BGA256,16X16,40

SRAMs

1 mm

70 Cel

3-STATE

64KX18

64K

3.15 V

0 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B256

3

3.45 V

1.5 mm

133 MHz

17 mm

Not Qualified

1179648 bit

3.15 V

e0

20

225

.015 Amp

17 mm

4.2 ns

7024S35PFGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535 Class B

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

5

16

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

125 Cel

4KX16

4K

-55 Cel

MATTE TIN

QUAD

S-PQFP-G100

5.5 V

1.6 mm

14 mm

Not Qualified

65536 bit

4.5 V

e3

14 mm

35 ns

7143SA70PF

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

280 mA

2048 words

COMMON

5

5

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

2KX16

2K

2 V

0 Cel

Tin/Lead (Sn85Pb15)

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

32768 bit

4.5 V

e0

20

240

.0015 Amp

14 mm

70 ns

5962-8700202UX

Renesas Electronics

MULTI-PORT SRAM

MILITARY

52

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

1.016 mm

125 Cel

2KX8

2K

-55 Cel

TIN LEAD

QUAD

S-CQCC-N52

5.5 V

4.58 mm

14.3002 mm

Not Qualified

16384 bit

4.5 V

e0

14.3002 mm

90 ns

HM658512ALRR-10T

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

32

TSOP2-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

20.95 mm

100 ns

7143LA55GGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535

PIN/PEG

PARALLEL

ASYNCHRONOUS

285 mA

2048 words

5

16

GRID ARRAY

125 Cel

2KX16

2K

-55 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

32768 bit

4.5 V

55 ns

R1Q6A7236ABB-33RB

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

7035S15PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

18

FLATPACK

70 Cel

8KX18

8K

0 Cel

QUAD

S-PQFP-G100

5.5 V

147456 bit

4.5 V

15 ns

7026S35GI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

335 mA

16384 words

COMMON

5

5

16

GRID ARRAY

PGA84M,11X11

SRAMs

2.54 mm

85 Cel

3-STATE

16KX16

16K

4.5 V

-40 Cel

TIN LEAD

PERPENDICULAR

2

S-CPGA-P84

5.5 V

Not Qualified

262144 bit

4.5 V

e0

.03 Amp

35 ns

7143LA55PFGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

285 mA

2048 words

5

16

FLATPACK

.5 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

55 ns

UPB10470D-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

-5.2 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

220 mA

4096 words

SEPARATE

-5.2

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

4KX1

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

4096 bit

e0

15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.