Renesas Electronics SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
R1RW0416DGE-2PI#B1	Renesas Electronics	STANDARD SRAM																																		3
R1Q4A7218ABB-33IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	700 mA	4194304 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	75497472 bit									.45 ns
6116LA25SOG	Renesas Electronics	STANDARD SRAM																														Matte Tin (Sn) - annealed				1									e3	40	260
70V7519S166BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	UNSPECIFIED		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM		X-PBGA-B256		3.45 V					9437184 bit	3.15 V								3.6 ns
70T3599S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		133 MHz		Not Qualified	4718592 bit	2.4 V		e1	30	260		.015 Amp		4.2 ns
HS0-65C262RRH-6	Renesas Electronics	STANDARD SRAM	COMMERCIAL				200k Rad(Si)				CMOS			PARALLEL	ASYNCHRONOUS	41.6 mA	16384 words	SEPARATE	5	5	1		DIE OR CHIP	SRAMs		70 Cel	3-STATE	16KX1	16K	3 V	0 Cel										Not Qualified	16384 bit							.0001 Amp		150 ns
70V05S20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	200 mA	8192 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-N68	1	3.6 V	4.572 mm		24.2062 mm	Not Qualified	65536 bit	3 V		e3	30	260		.005 Amp	24.2062 mm	20 ns
5962-3829414MTA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	110 mA	8192 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDFP-F28		5.5 V	2.921 mm		12.446 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.0003 Amp	18.288 mm	25 ns
5962-8700205UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	185 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	16384 bit	4.5 V		e0		240		.004 Amp	14.3002 mm	45 ns
70914S12JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		4096 words		5		9	CHIP CARRIER			.5 mm	70 Cel		4KX9	4K		0 Cel		QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.13 mm		36864 bit	4.5 V							24.13 mm	12 ns
70V9089S6PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		64KX8	64K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100		3.6 V	1.4 mm		14 mm		524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					14 mm	6.5 ns
7143LA55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V					32768 bit	4.5 V								55 ns
5962-3829409MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.211 mm	55 ns
70V3379S5BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	32KX18	32K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	100 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e1	30	260		.03 Amp	17 mm	5 ns
R1Q2A3636BBG-40RS	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.35 Amp	17 mm	.45 ns
HM65256BP-10	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =50NS						35.6 mm	100 ns
RMQS2A3618DGBA-332#AC0	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX18	2M		-40 Cel		BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V							15 mm	.45 ns
HM3-6514-9+	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	14 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T18							4096 bit			e0				.000015 Amp		320 ns
5962-8700210UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm		14.3002 mm	Not Qualified	16384 bit	4.5 V		e0					14.3002 mm	90 ns
R1QEA7218ABG-20IS	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V							17 mm	.45 ns
R1QBA7236ABG-19IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1110 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit							.96 Amp		.45 ns
7006S55GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	SPGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	16KX8	16K	4.5 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	5.207 mm		29.464 mm	Not Qualified	131072 bit	4.5 V		e0				.03 Amp	29.464 mm	55 ns
R1QGA7236ABG-25IT	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V							17 mm	.55 ns
7MPV6271S12M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	144	DIMM	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	500 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL		R-PDMA-N144						Not Qualified	262144 bit							.012 Amp		12 ns
7026S15GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				70 Cel		16KX16	16K		0 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								15 ns
R1Q5A3636BBG-33R	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	750 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.46 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V						.38 Amp	17 mm	.3 ns
7006S20GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	370 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm		27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.03 Amp	27.889 mm	20 ns
7143LA90GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	GRID ARRAY			2.54 mm	70 Cel		2KX16	2K		0 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V			29.464 mm		32768 bit	4.5 V							29.464 mm	90 ns
70V3569S6BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		16384 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		16KX36	16K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256	3	3.45 V	1.5 mm		17 mm	Not Qualified	589824 bit	3.15 V		e1					17 mm	6 ns
7006L45JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	290 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e3					24.2062 mm	45 ns
R1QCA3636CBB-22IA	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V							15 mm	.45 ns
R1QDA7236ABG-22IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1130 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	75497472 bit							.81 Amp		.45 ns
R1QEA3636CBB-20IB	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V							15 mm	.45 ns
R1QAA7236ABG-20RA	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V							17 mm	.45 ns
7M4077S55C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T64						Not Qualified	8388608 bit			e0				.08 Amp		55 ns
R1Q5A7236ABB-30IA	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
HM6167	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20						Not Qualified	16384 bit			e0						70 ns
70V06L25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	25 ns
R1Q5A7218ABB-40IA	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
5962-8700204UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	16384 bit	4.5 V		e0		240		.03 Amp	14.3002 mm	55 ns
5962-8700203ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	225 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-GDIP-T48	1	5.5 V				Not Qualified	16384 bit	4.5 V		e0		240		.03 Amp		70 ns
R1QEA7236ABB-22RS	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
7025L35FGB	Renesas Electronics	MULTI-PORT SRAM
6116LA20PB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V				Not Qualified	16384 bit	4.5 V		e0						19 ns
70P926850BZG	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	BGA	UNSPECIFIED		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	25 mA	16384 words	COMMON	1.8	1.8	16	GRID ARRAY	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	X-PBGA-B100	3	1.9 V		50 MHz		Not Qualified	262144 bit	1.7 V	FLOW-THROUGH	e1	30	260		.000008 Amp		10 ns
R1QFA7218ABB-20RS0	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
5962-8866509ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm		29.464 mm	Qualified	32768 bit	4.5 V	ARBITER		NOT SPECIFIED	NOT SPECIFIED			29.464 mm	70 ns
5962-8700205ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T48		5.5 V				Not Qualified	16384 bit	4.5 V		e0						45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.