Renesas Electronics SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
R1Q6A7218ABG-33RT	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V							17 mm	.45 ns
R1QKA3636CBB-25RS	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX36	1M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V							15 mm	.55 ns
R1QEA3636CBG-22IA	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V							17 mm	.45 ns
R1QLA4436RBG-25IA0	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX36	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	400 MHz	15 mm	Not Qualified	150994944 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			17 mm	.45 ns
70T631S10BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V				Not Qualified	4718592 bit	2.4 V		e1	30	260		.02 Amp		10 ns
R1QBA7218ABG-19RB	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V							17 mm	.45 ns
7025S15JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	310 mA	8192 words		5		16	CHIP CARRIER				1.27 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J84		5.5 V			29.3116 mm		131072 bit	4.5 V							29.3116 mm	15 ns
R1QBA4436RBG-22IB	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4MX36	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V							17 mm	.45 ns
R1QDA7236ABG-22IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1130 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	75497472 bit							.81 Amp		.45 ns
R1QEA7236ABG-20IS	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V							17 mm	.45 ns
R1QPA4418RBG-30IA0	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		8MX18	8M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			17 mm	.45 ns
R1Q6A7218ABB-33RS	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
7052S25PFB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16		SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	4					Not Qualified	16384 bit			e0	30	240		.03 Amp		25 ns
R1QBA3636CBB-22IB	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V							15 mm	.45 ns
R1QAA3618CBG-22IT	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		2MX18	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V							17 mm	.45 ns
70V3379S6BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	83 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e1	30	260		.015 Amp	17 mm	6 ns
R1Q6A7236ABB-33RS	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
R1QEA3636CBG-22IS	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V							17 mm	.45 ns
70V3389S6BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	83 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e1	30	260		.03 Amp	17 mm	6 ns
R1QCA7218ABB-20IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
R1Q4A7236ABB-40RB	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
70V05L15PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	8192 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		SRAMs	.8 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V		e3	30	260		.0025 Amp	14 mm	15 ns
R1QMA7218ABB-25IA	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.55 ns
R1QMA7218ABB-25IS	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.55 ns
70V9089S9PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	270 mA	65536 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.4 mm	66.7 MHz	14 mm	Not Qualified	524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.005 Amp	14 mm	9 ns
7006L15G	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11		SRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V				Not Qualified	131072 bit	4.5 V		e0				.0015 Amp		15 ns
7026S35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY					125 Cel		16KX16	16K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								35 ns
70V9079S15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	220 mA	32768 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.4 mm	40 MHz	14 mm	Not Qualified	262144 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.005 Amp	14 mm	15 ns
R1QKA3636CBG-25IS	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V							17 mm	.55 ns
R1Q6A7236ABB-30IB	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
HM3-6516-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	23 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel		DUAL		R-PDIP-T24						Not Qualified	16384 bit							.00025 Amp		200 ns
HM658128FP-12	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		5.5 V	3.05 mm			Not Qualified	1048576 bit	4.5 V							20.45 mm	120 ns
5962-8866205NX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	5.08 mm		7.62 mm	Qualified	262144 bit	4.5 V		e0					37.1475 mm	35 ns
7024S70FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ		SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3				.00003 Amp		70 ns
5962-8866516UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		16	FLATPACK				1.27 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F68		5.5 V	3.05 mm		24 mm	Qualified	32768 bit	4.5 V		e0					24.08 mm	35 ns
R1QFA7218ABG-19IA	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V							17 mm	.45 ns
5962-8976404MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	32768 bit	4.5 V		e0		240	YES	.004 Amp	14.3002 mm	55 ns
R1Q2A3636BBG-40RB	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.35 Amp	17 mm	.45 ns
70V7599S200BC8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	950 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	200 MHz	17 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	17 mm	10 ns
70V9089S9PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		64KX8	64K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100		3.6 V	1.4 mm		14 mm		524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					14 mm	9 ns
R1WV6416RBG-7SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	GRID ARRAY	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel	3-STATE	4MX16	4M	2.7 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V				Not Qualified	67108864 bit	2.7 V						.000024 Amp		70 ns
7143LA55FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		16	FLATPACK					85 Cel		2KX16	2K		-40 Cel		QUAD		S-PQFP-F68		5.5 V					32768 bit	4.5 V								55 ns
R1QEA7236ABG-20IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V							17 mm	.45 ns
7143LA55JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	285 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.004 Amp	24.2062 mm	55 ns
7006L20G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	SPGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	240 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11		SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm		29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0		240		.0015 Amp	29.464 mm	20 ns
R1Q4A7218ABB-33RS	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns
7025S55GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	285 mA	8192 words		5		16	GRID ARRAY				2.54 mm	70 Cel		8KX16	8K		0 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V			27.94 mm		131072 bit	4.5 V							27.94 mm	55 ns
R1QBA7218ABB-19IS	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V							15 mm	.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.