STMicroelectronics SRAM 2,190

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MK48128N-70	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V					YES		41.91 mm	70 ns
IMS1627E-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		20 ns
M68AW256MN55ZB1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	7 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	8 mm	55 ns
M68AW256DL55ND6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.00002 Amp	18.41 mm	55 ns
M68AW127BM70N1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0				.0000045 Amp	18.4 mm	70 ns
M68AW256D55ND6	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.00002 Amp	18.41 mm	55 ns
M621100-15E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	1048576 bit			e0				.004 Amp		15 ns
8413205RC	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		1	IN-LINE			2.54 mm	125 Cel		3-STATE	16KX1	16K		-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V					NO		25.4 mm	35 ns
IMS1626S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				125 Cel		3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V					YES			35 ns
IMS1620S-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	27.94 mm	55 ns
MK48256LS-120	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28				Not Qualified	262144 bit			e0				.00002 Amp		120 ns
IMS1400S-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel		3-STATE	16KX1	16K		-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		25.4 mm	50 ns
5962-8751301VX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel			4KX1	4K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4					22.86 mm	25 ns
IMS1605P-15S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.002 Amp		15 ns
MK6116N-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.445 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.001 Amp		150 ns
M68AW511AL55NC6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	20.95 mm	55 ns
M68AF031AM70NS6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	70 ns
IMS1601LW55S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	QUAD		R-XQCC-N22				Not Qualified	65536 bit			e0				.00007 Amp		55 ns
IMS1629W-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp	13.97 mm	15 ns
M68AW031AM55N1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel		DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V			NOT SPECIFIED	260		.000006 Amp	11.8 mm	55 ns
M624016-10E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.01 Amp	15.418 mm	10 ns
M68AW031AM70N1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V		e0				.000006 Amp	11.8 mm	70 ns
M68AW031AM55NS1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V		e0				.000006 Amp	11.8 mm	55 ns
5962-8670512RA	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	125 Cel			4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					24.13 mm	35 ns
M69KB096AA85CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N	1.95 V			Not Qualified	67108864 bit	1.7 V						.00012 Amp		85 ns
M68AW031AM70N1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel		DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V			NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
5962-8868102XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER				125 Cel			64KX4	64K		-55 Cel		QUAD		R-CQCC-N28	5.5 V			Not Qualified	262144 bit	4.5 V								45 ns
M68AF031AL70NS1E	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
M68AW256DL70ND1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.00002 Amp	18.41 mm	70 ns
MK41H67P-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0						25 ns
M638032-20E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28	3.6 V	3.556 mm	7.518 mm	Not Qualified	262144 bit	3 V		e0				.00015 Amp	17.932 mm	20 ns
IMS1600P-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		25 ns
5962-8868101LX	STMicroelectronics	STANDARD SRAM	MILITARY	24		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE				125 Cel			64KX4	64K		-55 Cel		DUAL		R-GDIP-T24				Not Qualified	262144 bit									35 ns
M68AW256ML70ZH6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	8 mm	70 ns
IMS1620P-55S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		55 ns
IMS1820P-30S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T24				Not Qualified	262144 bit			e0				.01 Amp		30 ns
5962-8868103LA	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY	e0						55 ns
MK48Z08B70	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	11 YEAR DATA RETENTION PERIOD; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e0			YES	.003 Amp		70 ns
M68AW127BM10NK1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0				.000005 Amp	11.8 mm	100 ns
IMS1403W-70M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel		3-STATE	16KX1	16K		-55 Cel	TIN LEAD	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0						65 ns
M68AF031AL55B6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.000006 Amp	37.085 mm	55 ns
MK44S80X-17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE				70 Cel		3-STATE	16KX4	16K		0 Cel		DUAL	1	R-PDSO-J24	5.5 V			Not Qualified	65536 bit	4.5 V					YES			17 ns
MK48Z19B-55	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp		55 ns
M68AF031AM55MS1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G28	5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V		e3				.000006 Amp	18.22 mm	55 ns
IMS1625P-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.00007 Amp		25 ns
M68AW256DL70ZB6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e1				.00002 Amp	7 mm	70 ns
M68AW256DL70ND6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.00002 Amp	18.41 mm	70 ns
MK48Z19B-20	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp		200 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.