STMicroelectronics SRAM 2,190

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IMS1423P-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0						35 ns
IMS1620E-45S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24				Not Qualified	65536 bit			e0				.014 Amp		45 ns
M68AW128ML70ZB1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	128KX16	128K	1.5 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	2097152 bit	2.7 V		e0				.000009 Amp	8 mm	70 ns
M68AF031AM55N1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	55 ns
M68AW256ML70ND6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	18.41 mm	70 ns
M68AW128M70ND6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	128KX16	128K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	2.7 V		e0				.00002 Amp	18.41 mm	70 ns
M621256-15PS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	SEPARATE	5	5	1	IN-LINE, SHRINK PITCH	DIP24,.3	SRAMs	1.778 mm	70 Cel		3-STATE	256KX1	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	22.86 mm	15 ns
M68AW127BL10NK1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0				.000005 Amp	11.8 mm	100 ns
5962-8854502LA	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0					30.48 mm	45 ns
M68AF031AL70MS6E	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28	5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	260		.000006 Amp	18.22 mm	70 ns
M68AF031AM55B6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.000006 Amp	37.085 mm	55 ns
IMS1695S-25M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE				125 Cel		3-STATE	8KX9	8K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V					YES			25 ns
M68AF031AM55MS6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V		e3				.000006 Amp	18.22 mm	55 ns
MK44S80X-15	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE				70 Cel		3-STATE	16KX4	16K		0 Cel		DUAL	1	R-PDSO-J24	5.5 V			Not Qualified	65536 bit	4.5 V					YES			15 ns
M68AW256DM70ZB6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	7 mm	Not Qualified	4194304 bit	2.7 V		e1					8 mm	20 ns
IMS1620W-30	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	13.446 mm	30 ns
M624064-15E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.001 Amp	15.418 mm	15 ns
IMS1624LS-45M	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel		3-STATE	16KX4	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.0008 Amp	30.48 mm	45 ns
M68AW127BL10MC6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.303 mm	Not Qualified	1048576 bit	2.7 V		e0				.000005 Amp	20.447 mm	100 ns
M629032-15PS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32				Not Qualified	294912 bit			e0				.001 Amp		15 ns
M68AF031AL70N1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	70 ns
5962-8868101XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N28	5.5 V	3.048 mm	8.89 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY	e0					13.97 mm	35 ns
IMS1600E-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	15.418 mm	25 ns
M68AW512DN55ZB1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	512KX16	512K	1.5 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	8388608 bit	2.7 V		e0				.00003 Amp	7 mm	55 ns
M628032-15E1TR	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.556 mm	7.518 mm	Not Qualified	262144 bit	4.5 V					YES		17.932 mm	15 ns
5962-8670513ZX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK			1.27 mm	125 Cel			4KX4	4K		-55 Cel		DUAL		R-CDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V							12.192 mm	45 ns
IMS1423P-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.455 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		26.289 mm	50 ns
5962-8670513RX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	125 Cel			4KX4	4K		-55 Cel		DUAL		R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V							25.4 mm	45 ns
M62940AQ14	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel		3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J44				Not Qualified	294912 bit			e0				.03 Amp		14 ns
M68AF031AL55NS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	55 ns
IMS1635P-15S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0				.00007 Amp		15 ns
IMS1629P-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		25 ns
M68AW511AL55MC1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.303 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	20.445 mm	55 ns
IMS1403P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.455 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		26.289 mm	40 ns
M68AW128ML70ZB6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	2097152 bit	2.7 V						.000009 Amp	8 mm	70 ns
M62940AQ12TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel			32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	12 ns
IMS1423S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel		3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		25.4 mm	35 ns
5962-8670511ZX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK				125 Cel			4KX4	4K		-55 Cel		DUAL		R-CDFP-F20	5.5 V			Not Qualified	16384 bit	4.5 V								25 ns
IMS1620E-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	15.418 mm	45 ns
MK62486Q19	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel		3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	19 ns
8413208YA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	16KX1	16K		-55 Cel		QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V					NO		10.795 mm	50 ns
M68AW127BM10N6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0				.000005 Amp	18.4 mm	100 ns
IMS1620P-30S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		30 ns
M68AF031AM55MS6F	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28	5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V				260		.000006 Amp	18.22 mm	55 ns
M68AW512MN55ND6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V		e0				.00001 Amp	18.41 mm	55 ns
IMS1624LN45M	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		3-STATE	16KX4	16K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.0008 Amp	13.97 mm	45 ns
IMS1624P-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.014 Amp	29.46 mm	55 ns
IMS1605W-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.00007 Amp	13.446 mm	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.