STMicroelectronics SRAM 2,190

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MK4202Q17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel		3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0			YES	.05 Amp	24.23 mm	17 ns
M628032-12PS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.57 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	34.67 mm	12 ns
M621256-20E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	15.418 mm	20 ns
IMS1203S-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX1	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.006 Amp	22.86 mm	25 ns
IMS1403S-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		25.4 mm	50 ns
M68AF127BM70MC6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	3 mm	11.305 mm	Not Qualified	1048576 bit	4.5 V		e0				.0000045 Amp	20.445 mm	70 ns
MK48H65N-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0				.00001 Amp		45 ns
IMS1203S-20S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX1	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4096 bit			e0				.006 Amp		20 ns
M68AW031AM55MS6U	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V		e0				.000006 Amp	18.11 mm	55 ns
M68AF031AM55NS6F	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	55 ns
M68AW031AM70MS1U	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V		e3				.000006 Amp	18.11 mm	70 ns
M624256-20E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0005 Amp	17.935 mm	20 ns
M68AW256MN70ND1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	18.41 mm	70 ns
MK4511K-15	STMicroelectronics	MULTI-PORT SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	25 mA	512 words	COMMON			9	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel		3-STATE	512X9	512	4.5 V	0 Cel	TIN LEAD	QUAD	2, (MUXED)	R-PQCC-J32				Not Qualified				e0				.001 Amp		150 ns
M68AF127BM70NK6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0				.000015 Amp	11.8 mm	70 ns
5962-8601502XX	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel			64KX1	64K		-55 Cel		DUAL		R-CDIP-T22	5.5 V	3.89 mm	7.62 mm	Not Qualified	65536 bit	4.5 V							27.94 mm	35 ns
M68Z128W-70N1TR	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	1.4 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0					18.4 mm	70 ns
8413208YX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER				125 Cel			16KX1	16K		-55 Cel		QUAD		S-XQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V								55 ns
IMS1600P-30	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	27.94 mm	30 ns
MK48H64P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDIP-T28				Not Qualified	65536 bit			e0				.00001 Amp		45 ns
IMS1624N-45M	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		3-STATE	16KX4	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.019 Amp	13.97 mm	45 ns
MK4832LN-120	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	5.334 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00002 Amp	36.957 mm	120 ns
M69AR024BL70ZB8E	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX16	1M		-30 Cel		BOTTOM		R-PBGA-B48	2.25 V	1.2 mm	6 mm	Not Qualified	16777216 bit	1.7 V							8 mm	70 ns
IMS1433S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel		3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-XDIP-T24				Not Qualified	16384 bit			e0				.02 Amp		35 ns
IMS1800S-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	256KX1	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	30.48 mm	45 ns
T74LS170M1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel			4X4	4		0 Cel		DUAL		R-PDSO-G16	5.25 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.75 V							9.9 mm	40 ns
IMS1629P-15S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T24				Not Qualified	65536 bit			e0				.00007 Amp		15 ns
IMS1624P-30	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.014 Amp	29.46 mm	30 ns
5962-8685914LX	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel			16KX4	16K		-55 Cel		DUAL		R-XDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V							30.48 mm	55 ns
IMS1423Y-35M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	130 mA	4096 words	COMMON	5	5	4	FLATPACK	FL20,.3	SRAMs	1.27 mm	125 Cel		3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V		e0			NO		12.192 mm	35 ns
MK41H80N-25	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	5.334 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.12 Amp	26.289 mm	25 ns
MK48H64P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDIP-T28				Not Qualified	65536 bit			e0				.00001 Amp		35 ns
MK48H98N-40	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE				70 Cel		3-STATE	8KX9	8K		0 Cel		DUAL	1	R-PDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V					YES			40 ns
IMS1629N-20M	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	16KX4	16K	2 V	-55 Cel		QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V					YES		13.97 mm	20 ns
IMS1630LH10S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.56	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28				Not Qualified	65536 bit			e0				.00007 Amp		100 ns
IMS1820S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel		3-STATE	64KX4	64K		-55 Cel		DUAL	1	R-CDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	262144 bit	4.5 V					NO		30.48 mm	35 ns
MK48Z03B12	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel			2KX8	2K		0 Cel		DUAL		R-PDIP-T24				Not Qualified	16384 bit							.001 Amp		120 ns
M69AB048BD70ZA8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	TFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA71,8X12,32	Other Memory ICs	.8 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM		R-XBGA-B71	1.95 V	1.2 mm	7 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0				.00001 Amp	11 mm	70 ns
M68AW256DN70ZB1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	10 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e1				.00002 Amp	7 mm	70 ns
M68AW511AM55MC1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.305 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	20.445 mm	55 ns
M68AW256MN55ZB6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	7 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	8 mm	55 ns
M68AF127BL70MC1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	3 mm	11.305 mm	Not Qualified	1048576 bit	4.5 V		e0				.0000045 Amp	20.445 mm	70 ns
IMS1635S-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		25 ns
MK48Z18B-25	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0				.001 Amp		250 ns
MK48H64N-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0				.00001 Amp		45 ns
M68AF511AL55MC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	3 mm	11.303 mm	Not Qualified	4194304 bit	4.5 V		e0				.000009 Amp	20.445 mm	55 ns
M68AW256ML55ZB6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	26 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	7 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	8 mm	55 ns
M69KM048AACW8	STMicroelectronics	PSEUDO STATIC RAM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	40 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	2MX16	2M		-30 Cel		UPPER		X-XUUC-N	1.95 V			Not Qualified	33554432 bit	1.7 V						.00007 Amp		70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.