Samsung SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6X8008T2B-UF70	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	1MX8	1M	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1					Not Qualified	8388608 bit			e3				.000015 Amp		70 ns
K7N163645M-FC160	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel			512KX36	512K		0 Cel		BOTTOM		R-PBGA-B119		2.625 V			14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE						22 mm	3.5 ns
K7B801825M-TC75	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	ALSO REQUIRES 3.3V/2.5V I/O SUPPLY						20 mm	7.5 ns
K7I640882M-FC300	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			8MX8	8M		0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm	Not Qualified	67108864 bit	1.7 V	PIPELINED ARCHITECTURE						17 mm	.45 ns
K7P401866A-H2500	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel			256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		2.65 V			14 mm	Not Qualified	4718592 bit	2.35 V	ALSO REQUIRES 1.5V I/O SUPPLY						22 mm
KM62256BLTG-V24	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	70 Cel			32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	2.7 V	BATTERY BACKUP						12.4 mm	240 ns
K6X8016T3B-TF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	3 V		e0		240		.000015 Amp	18.41 mm	55 ns
K7A401849A-PC20	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	390 mA	262144 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX18	256K	2.37 V	0 Cel		QUAD		R-PQFP-G100				200 MHz		Not Qualified	4718592 bit							.04 Amp		3.1 ns
K7B803625M-HC100	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V		83 MHz	14 mm	Not Qualified	9437184 bit	3.135 V						.12 Amp	22 mm	10 ns
K6T1008U2C-TF10	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V							18.4 mm	100 ns
K6F2016R4D-FF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			128KX16	128K		-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.2 mm		6 mm	Not Qualified	2097152 bit	1.65 V	IT CAN ALSO OPERATE AT 2V						7 mm	70 ns
K7A201800A-QC16T	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	128KX18	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			166 MHz		Not Qualified	2359296 bit			e0				.02 Amp		3.5 ns
K7M163635B-QC65T	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON		2.5,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX36	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100	1			133 MHz		Not Qualified	18874368 bit							.13 Amp		6.5 ns
K7J163682B-FI200	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	512KX36	512K	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.19 Amp	15 mm	.45 ns
K7A161801M-14T	Samsung
K7A161801M-QC140	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	380 mA	1048576 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel		QUAD		R-PQFP-G100				138 MHz		Not Qualified	18874368 bit							.03 Amp		3.5 ns
K6T4008S1C-TF10	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		2.5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-G32		2.7 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.3 V							18.4 mm	100 ns
K7I641884M-FC16T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	75497472 bit			e1						.5 ns
KM616FR4110ZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		1.7/2.2	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	.94 mm		8.2 mm	Not Qualified	4194304 bit	1.7 V		e0					8.7 mm	100 ns
KM641003CLJI-12	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel			256KX4	256K		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V							20.96 mm	12 ns
K7N161801A-QC160	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			1MX18	1M		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	3.5 ns
K7A403601A-QC14	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	138 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.05 Amp	20 mm	4 ns
K6R1016V1C-JC15T	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44						Not Qualified	1048576 bit			e0				.005 Amp		15 ns
K7B403625A-QC80	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			100 MHz		Not Qualified	4718592 bit			e0				.05 Amp		8 ns
K7R321882C-FI30T	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX18	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165				300 MHz		Not Qualified	37748736 bit			e1				.35 Amp		.45 ns
KM616V1002CLFI-120	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			64KX16	64K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V							7 mm	12 ns
K7B161825M-QC85	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100		3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e0				.03 Amp	20 mm	8.5 ns
K7N323631C-EI25T	Samsung	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	1048576 words	COMMON		2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX36	1M	2.38 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	37748736 bit			e1		260		.1 Amp		2.6 ns
KM658512LR-12L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			512KX8	512K		0 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	AUTO/SELF REFRESH				YES			120 ns
KM718BV87T-12	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel			64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.47 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	3.13 V							19.1262 mm	12 ns
K6F8008R2M-FF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX8	1M		-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.2 mm		8 mm	Not Qualified	8388608 bit	1.65 V							12 mm	85 ns
K7N803645M-HC10	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel			256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		2.625 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.375 V							22 mm	5 ns
K7A803609B-HI20	Samsung	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel			256KX36	256K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	3.1 ns
K7N321831C-PI160	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	360 mA	2097152 words	COMMON	2.5	2.5,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	2MX18	2M	2.38 V	-40 Cel	TIN BISMUTH	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm	166 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT 3.3V.	e6		260		.1 Amp	20 mm	3.5 ns
K7M161825A-FC650	Samsung	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel			1MX18	1M		0 Cel		BOTTOM		R-PBGA-B165		3.465 V	1.4 mm		13 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						15 mm	6.5 ns
KM616V1000BLRI-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0			YES	.00005 Amp	18.41 mm	100 ns
K7A403200B-QI140	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	128KX32	128K	3.14 V	-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm	138 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED		.05 Amp	20 mm	4 ns
K7A163201A-QC22	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	430 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX32	512K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	225 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.06 Amp	20 mm	2.8 ns
K7R320984C-EC250	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	4MX9	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1				.3 Amp	17 mm	.45 ns
K7I643682M-FC25	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	2MX36	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit			e0						.45 ns
K7A163630B-PI25T	Samsung	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	360 mA	524288 words	COMMON		2.5,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	1			250 MHz		Not Qualified	18874368 bit			e3				.13 Amp		2.6 ns
K6R1008V1C-TL12T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0				.0003 Amp		12 ns
K7P321874C-GC300	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	2097152 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	2MX18	2M	2.37 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	2	2.63 V	2.21 mm	300 MHz	14 mm	Not Qualified	37748736 bit	2.37 V	PIPELINED ARCHITECTURE	e1				.07 Amp	22 mm	1.6 ns
KM616FR2000Z-30L	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	2	1.8/2.7	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		2.7 V	.81 mm		6.2 mm	Not Qualified	2097152 bit	1.8 V		e0					13.75 mm	300 ns
KM616V4002BLJ-15	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES	.0007 Amp	25.58 mm	15 ns
K7A403209B-QC200	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	128KX32	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	4194304 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.05 Amp	20 mm	2.8 ns
K6F4016U6E-EF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	1 mm		6 mm	Not Qualified	4194304 bit	2.7 V							7 mm	55 ns
KM616FU2000RI-8	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	128KX16	128K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3					Not Qualified	2097152 bit			e0				.000001 Amp		85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.