Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
KM616V4010CLZI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words		COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.6 V	.94 mm		6.1 mm	Not Qualified	4194304 bit	3 V		e0				8.9 mm	70 ns
K7B803625A-QC90	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	330 mA	262144 words		COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			100 MHz		Not Qualified	9437184 bit			e0			.05 Amp		9 ns
KM658512P-10	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	YES	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel		3-STATE	512KX8	512K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V		e0		YES		41.91 mm	100 ns
K7N323631C-PI25T	Samsung	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	460 mA	1048576 words		COMMON		2.5,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	1MX36	1M	2.38 V	-40 Cel	TIN SILVER COPPER	QUAD		R-PQFP-G100				250 MHz		Not Qualified	37748736 bit			e1			.1 Amp		2.6 ns
K7A801809B-HI25	Samsung	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words			3.3		18	GRID ARRAY			1.27 mm	85 Cel			512KX18	512K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE					22 mm	2.6 ns
K7N163631B-FI25	Samsung	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	524288 words		COMMON		2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	512KX36	512K	3.14 V	-40 Cel		BOTTOM		R-PBGA-B165	1			250 MHz		Not Qualified	18874368 bit						.13 Amp		2.6 ns
K6R1008C1B-TI8	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0			.01 Amp		8 ns
K6R1004C1C-JI100	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	256KX4	256K	4.5 V	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	1048576 bit						.005 Amp		10 ns
K6R1008C1B-TC12	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.01 Amp	20.95 mm	12 ns
KM616U4000BLTI-8L	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	262144 words		COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0			.00002 Amp	18.41 mm	85 ns
K7N161831B-FC16	Samsung	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	1048576 words		COMMON		2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel		BOTTOM		R-PBGA-B165	1			167 MHz		Not Qualified	18874368 bit						.13 Amp		3.5 ns
KM6264BLSP-10	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words		COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0			.00005 Amp		100 ns
K7A801800A-QC16T	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	420 mA	524288 words		COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			166 MHz		Not Qualified	9437184 bit			e0			.05 Amp		3.5 ns
KM64V1003CLJ-20	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words			3.3		4	SMALL OUTLINE			1.27 mm	70 Cel			256KX4	256K		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V						20.96 mm	20 ns
KM736FS4011AH-4	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	550 mA	131072 words		COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	2.35 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.65 V			14 mm	Not Qualified	4718592 bit	2.35 V		e0			.06 Amp	22 mm	2 ns
K7I323684C-EC250	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	1048576 words		COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	2	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.25 Amp	17 mm	.45 ns
K7A321800M-FI20	Samsung	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	2MX18	2M	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			200 MHz		Not Qualified	37748736 bit			e0					3.1 ns
K7S1618T4C-FI400	Samsung	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	1048576 words		SEPARATE	1.8	1.5,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX18	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.4 mm	400 MHz	15 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE				.35 Amp	17 mm	.45 ns
K6T4008C1B-GP700	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V						20.47 mm	70 ns
K7N403601M-QC750	Samsung
K7M161835B-QC65T	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	1048576 words		COMMON		2.5,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel		QUAD		R-PQFP-G100	1			133 MHz		Not Qualified	18874368 bit						.13 Amp		6.5 ns
K7N803601M-TC130	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words			3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel			256KX36	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V						20 mm	4.2 ns
K6F1616T6B-TF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words			3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.7 V						18.4 mm	55 ns
K7M403625B-QI750	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words			3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel			128KX36	128K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE					20 mm	7.5 ns
K6T4008C1C-MB55	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				20.95 mm	55 ns
K6R1016V1D-FC10	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	65 mA	65536 words		COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48						Not Qualified	1048576 bit			e0			.001 Amp		10 ns
K7N321849M-QC25T	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words		COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	2MX18	2M	2.38 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			250 MHz		Not Qualified	37748736 bit			e0			.01 Amp		2.6 ns
KM616V4002BJ-120	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words			3.3		16	SMALL OUTLINE			1.27 mm	70 Cel			256KX16	256K		0 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V						25.58 mm	12 ns
K7N323631C-FI160	Samsung	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	1048576 words		COMMON	2.5	2.5,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	1MX36	1M	2.38 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.625 V	1.4 mm	166 MHz	15 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT 3.3V.	e0			.1 Amp	17 mm	3.5 ns
KM64V1003CJI-10	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words			3.3		4	SMALL OUTLINE			1.27 mm	85 Cel			256KX4	256K		-40 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	3 V						20.96 mm	10 ns
K6R1016V1A-TI12T	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel		DUAL		R-PDSO-G44						Not Qualified	1048576 bit						.005 Amp		12 ns
KM6161002CIZ-12	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words			5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			128KX8	128K		-40 Cel		BOTTOM		R-PBGA-B48		5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V						7 mm	12 ns
K6X8016T3B-TF55T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words		COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3					Not Qualified	8388608 bit			e0	240		.000015 Amp		55 ns
K6T1008U2E-TB700	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V						18.4 mm	70 ns
K7P161812M-HC38	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	1048576 words		COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.55 mm	263.15 MHz	14 mm	Not Qualified	18874368 bit	3.15 V		e0			.15 Amp	22 mm	3.8 ns
KM718V789A-50	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words			3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			128KX18	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	SELF-TIMED WRITE CYCLE					20 mm	3.1 ns
K6F1016V3M-TB85	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words			3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			64KX16	64K		0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V						18.41 mm	85 ns
K6E1004C1B-JL20T	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	118 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	1048576 bit			e0			.0004 Amp		20 ns
K6X1008T2D-RF70	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V						18.4 mm	70 ns
K7A803608B-QI250	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words			3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel			256KX36	256K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE					20 mm	2.6 ns
K7B161825M-QC10	Samsung	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	1048576 words		COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	83 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e0			.03 Amp	20 mm	10 ns
K7A401809A-QC25	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	490 mA	262144 words		COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			250 MHz		Not Qualified	4718592 bit			e0			.05 Amp		2.4 ns
K6E0808C1E-TI12T	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.46,20	SRAMs	.5 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	262144 bit			e0			.002 Amp		12 ns
K7A161809A-HI20	Samsung	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words			3.3		18	GRID ARRAY			1.27 mm	85 Cel			1MX18	1M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V		e0				22 mm	3.1 ns
K7N161845A-QC160	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words			2.5		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel			1MX18	1M		0 Cel		QUAD		R-PQFP-G100		2.625 V	1.6 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE					20 mm	3.5 ns
K6T4016C3B-TF70T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	262144 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	4194304 bit			e0					70 ns
K6F1016S4B-FF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words			2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			64KX16	64K		-40 Cel		BOTTOM		R-PBGA-B48		2.7 V	1.2 mm		6 mm	Not Qualified	1048576 bit	2.3 V						7 mm	85 ns
K6X1008T2D-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words		COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V		e0				18.4 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.